公开(公告)号：US20200273886A1

公开(公告)日：2020-08-27

申请号：US16816423

申请日：2020-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime KIMURA ,  Tsutomu MURAKAWA ,  Kosei NEI ,  Hiroaki HONDA ,  Yusuke SHINO

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/84

Abstract: A semiconductor device which can suppress leakage current between a wiring and a connection electrode connected to a floating node is provided. The semiconductor device includes a first insulator, a first conductor over the first insulator, a second conductor over the first insulator, and a second insulator over the first insulator, the first conductor, and the second conductor. The first conductor and the second conductor contain a metal A (one kind or a plurality of kinds of aluminum, copper, tungsten, chromium, silver, gold, platinum, tantalum, nickel, molybdenum, magnesium, beryllium, indium, and ruthenium). The metal A is detected in an interface between the first insulator and the second insulator by an energy dispersive X-ray spectroscopy (EDX). The second insulator includes a groove for exposing the first insulator between the first conductor and the second conductor.

公开(公告)号：US20180286886A1

公开(公告)日：2018-10-04

申请号：US15925122

申请日：2018-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime KIMURA ,  Tsutomu MURAKAWA ,  Kosei NEI ,  Hiroaki HONDA ,  Yusuke SHINO

IPC: H01L27/12 ,  G11C11/404 ,  H01L29/786 ,  H01L27/06 ,  H01L21/84

Abstract: A semiconductor device which can suppress leakage current between a wiring and a connection electrode connected to a floating node is provided. The semiconductor device includes a first insulator, a first conductor over the first insulator, a second conductor over the first insulator, and a second insulator over the first insulator, the first conductor, and the second conductor. The first conductor and the second conductor contain a metal A (one kind or a plurality of kinds of aluminum, copper, tungsten, chromium, silver, gold, platinum, tantalum, nickel, molybdenum, magnesium, beryllium, indium, and ruthenium). The metal A is detected in an interface between the first insulator and the second insulator by an energy dispersive X-ray spectroscopy (EDX). The second insulator includes a groove for exposing the first insulator between the first conductor and the second conductor.

公开(公告)号：US20140342499A1

公开(公告)日：2014-11-20

申请号：US14451683

申请日：2014-08-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Sachiaki TEZUKA ,  Tomokazu YOKOI ,  Yusuke SHINO

IPC: H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L29/04

CPC classification number: H01L29/242 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/7869

Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

Abstract translation: 氧化物半导体膜与金属膜之间的接触电阻降低。 提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。 提供能够进行高速运转的半导体装置。 在使用氧化物半导体膜的晶体管中，对氧化物半导体膜进行氮等离子体处理。 因此，氧化物半导体膜中包含的部分氧被氮代替，从而形成氧氮化物区。 形成与氧氮化物区域接触的金属膜。 氧氮化物区域的电阻比氧化物半导体膜的其他区域低。 此外，氧氮化物区域不可能在与接触金属膜的界面处形成高电阻金属氧化物。