公开(公告)号：US20180145180A1

公开(公告)日：2018-05-24

申请号：US15827426

申请日：2017-11-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

公开(公告)号：US20160163873A1

公开(公告)日：2016-06-09

申请号：US15044428

申请日：2016-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

Abstract translation: 提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。 提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。 晶体管包括包括沟道形成区域的氧化物半导体膜和包含金属元素和掺杂剂的低电阻区域。 沟道形成区域位于沟道长度方向的低电阻区域之间。 在晶体管的制造方法中，通过在氧化物半导体膜与包含金属元素的膜接触的状态下进行的热处理来添加金属元素，并且通过植入通过包含金属元素的膜添加掺杂剂 形成包含金属元素和掺杂剂的低电阻区域。

公开(公告)号：US20160043231A1

公开(公告)日：2016-02-11

申请号：US14920244

申请日：2015-10-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78693 ,  H01L29/78696

Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.

Abstract translation: 半导体器件包括具有第一区域和一对第二区域的氧化物半导体膜，第一区域和第二区域彼此面对，其间设置有第一区域，氧化物半导体膜上的栅极绝缘膜和与第一区域重叠的第一电极， 栅极绝缘膜。 第一区域是包括c轴取向晶体部分的非单晶氧化物半导体区域。 所述一对第二区域是含有掺杂剂且包含多个晶体部分的氧化物半导体区域。

公开(公告)号：US20170110586A1

公开(公告)日：2017-04-20

申请号：US15393339

申请日：2016-12-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Sachiaki TEZUKA ,  Shinji OHNO

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603

Abstract: An oxide semiconductor layer is formed, a gate insulating layer is formed over the oxide semiconductor layer, a gate electrode layer is formed to overlap with the oxide semiconductor layer with the gate insulating layer interposed therebetween, a first insulating layer is formed to cover the gate insulating layer and the gate electrode layer, an impurity element is introduced through the insulating layer to form a pair of impurity regions in the oxide semiconductor layer, a second insulating layer is formed over the first insulating layer, the first insulating layer and the second insulating layer are anisotropically etched to form a sidewall insulating layer in contact with a side surface of the gate electrode layer, and a source electrode layer and a drain electrode layer in contact with the pair of impurity regions are formed.

公开(公告)号：US20140342499A1

公开(公告)日：2014-11-20

申请号：US14451683

申请日：2014-08-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Sachiaki TEZUKA ,  Tomokazu YOKOI ,  Yusuke SHINO

IPC: H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L29/04

CPC classification number: H01L29/242 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/7869

Abstract: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

Abstract translation: 氧化物半导体膜与金属膜之间的接触电阻降低。 提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。 提供能够进行高速运转的半导体装置。 在使用氧化物半导体膜的晶体管中，对氧化物半导体膜进行氮等离子体处理。 因此，氧化物半导体膜中包含的部分氧被氮代替，从而形成氧氮化物区。 形成与氧氮化物区域接触的金属膜。 氧氮化物区域的电阻比氧化物半导体膜的其他区域低。 此外，氧氮化物区域不可能在与接触金属膜的界面处形成高电阻金属氧化物。

公开(公告)号：US20140131701A1

公开(公告)日：2014-05-15

申请号：US14077371

申请日：2013-11-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hirokazu WATANABE ,  Shinji OHNO

IPC: H01L29/786 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L29/4908

Abstract: To provide a semiconductor device which includes a gate insulating film with high withstand voltage and thus can have high reliability. The semiconductor device includes an oxide semiconductor film over an insulating surface; a pair of first conductive films over the oxide semiconductor film; a first insulating film, a second insulating film, and a third insulating film which are stacked in this order over the oxide semiconductor film and the pair of first conductive films; and a second conductive film overlapping with the oxide semiconductor film over the first to third insulating films. The first insulating film and the third insulating film contain silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, or aluminum oxynitride. The second insulating film contains gallium oxide, zirconium oxide, or hafnium oxide.

Abstract translation: 提供一种包括具有高耐压的栅极绝缘膜并因此可以具有高可靠性的半导体器件。 半导体器件包括绝缘表面上的氧化物半导体膜; 氧化物半导体膜上的一对第一导电膜; 第一绝缘膜，第二绝缘膜和第三绝缘膜，其依次层叠在氧化物半导体膜和一对第一导电膜上; 以及在所述第一至第三绝缘膜上与所述氧化物半导体膜重叠的第二导电膜。 第一绝缘膜和第三绝缘膜含有氧化硅，氮化硅，氮氧化硅，氮氧化硅，氧化铝或氮氧化铝。 第二绝缘膜包含氧化镓，氧化锆或氧化铪。

公开(公告)号：US20160163880A1

公开(公告)日：2016-06-09

申请号：US15045298

申请日：2016-02-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinji OHNO ,  Hirokazu WATANABE ,  Naoto KUSUMOTO

IPC: H01L29/786 ,  H01L21/425 ,  H01L29/24

CPC classification number: H01L29/78693 ,  H01L21/425 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A transistor excellent in electrical characteristics and a method for manufacturing the transistor are provided. The transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel formation region over an insulating surface; a gate insulating film over the oxide semiconductor layer; a gate electrode overlapping with the channel formation region, over the gate insulating film; a source electrode in contact with the source region; and a drain electrode in contact with the drain region. The source region and the drain region include a portion having higher oxygen concentration than the channel formation region.

公开(公告)号：US20150140730A1

公开(公告)日：2015-05-21

申请号：US14570527

申请日：2014-12-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/02

CPC classification number: H01L29/78618 ,  G02F1/136204 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/0259 ,  H01L21/265 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

Abstract translation: 通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。 在使用有源层的氧化物半导体膜的晶体管中，在与沟道区相邻的源极区域和漏极区域中设置有微孔。 通过在形成于氧化物半导体膜中的源极区域和漏极区域内设置微孔，氧化物半导体膜的沟道区域中所含的氢能够被捕获在微孔中。

公开(公告)号：US20160284864A1

公开(公告)日：2016-09-29

申请号：US15177447

申请日：2016-06-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

IPC: H01L29/786 ,  H01L27/12 ,  G02F1/1362 ,  H01L29/66 ,  G02F1/1368 ,  H01L29/24 ,  H01L27/105

CPC classification number: H01L29/78618 ,  G02F1/136204 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/0259 ,  H01L21/265 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

公开(公告)号：US20150037932A1

公开(公告)日：2015-02-05

申请号：US14459597

申请日：2014-08-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshihiko SAITO ,  Takehisa HATANO ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02488 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869

Abstract: A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.

Abstract translation: 提供了包括氧化物半导体并且具有良好的电特性的半导体器件。 在半导体器件中，在衬底上形成氧化物半导体膜和绝缘膜。 氧化物半导体膜的侧面与绝缘膜接触。 氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。 栅极绝缘膜与氧化物半导体膜形成并接触。 在栅绝缘膜上形成具有侧壁绝缘膜的栅电极。 源电极和漏电极形成为与氧化物半导体膜和绝缘膜接触。