公开(公告)号：US09437832B2

公开(公告)日：2016-09-06

申请号：US14621914

申请日：2015-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Sakuishi ,  Yutaka Uchida ,  Hiroki Adachi ,  Saki Eguchi ,  Junpei Yanaka ,  Kayo Kumakura ,  Seiji Yasumoto ,  Kohei Yokoyama ,  Akihiro Chida

IPC: H01L51/00 ,  B32B7/02 ,  B32B38/10 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B27/20 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B37/02 ,  B32B37/18 ,  B32B37/12 ,  H01L51/52

CPC classification number: H01L51/0097 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B17/06 ,  B32B27/20 ,  B32B27/286 ,  B32B27/30 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B37/02 ,  B32B37/10 ,  B32B37/1292 ,  B32B37/18 ,  B32B38/10 ,  B32B2250/05 ,  B32B2255/20 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/40 ,  B32B2307/50 ,  B32B2307/536 ,  B32B2307/558 ,  B32B2310/0843 ,  B32B2315/08 ,  B32B2457/20 ,  H01L51/003 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

Abstract translation: 提供了灵活的设备。 柔性装置的粘合层的硬度设定为高于70°的肖氏D值，或优选高于或等于邵氏D的80°。挠性装置的柔性基板的膨胀系数设定得较小 比58ppm /℃，或优选小于或等于30ppm /℃

公开(公告)号：US10141526B2

公开(公告)日：2018-11-27

申请号：US15252295

申请日：2016-08-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Sakuishi ,  Yutaka Uchida ,  Hiroki Adachi ,  Saki Eguchi ,  Junpei Yanaka ,  Kayo Kumakura ,  Seiji Yasumoto ,  Kohei Yokoyama ,  Akihiro Chida

IPC: H01L51/00 ,  B32B7/02 ,  B32B37/02 ,  B32B37/18 ,  B32B38/10 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B27/20 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B7/06 ,  B32B17/06 ,  B32B37/10 ,  B32B37/12 ,  H01L51/52

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

公开(公告)号：US10079353B2

公开(公告)日：2018-09-18

申请号：US15810249

申请日：2017-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Sakuishi ,  Yutaka Uchida ,  Hiroki Adachi ,  Saki Eguchi ,  Junpei Yanaka ,  Kayo Kumakura ,  Seiji Yasumoto ,  Kohei Yokoyama ,  Akihiro Chida

IPC: H01L51/00 ,  B32B37/02 ,  B32B37/10 ,  B32B37/18

CPC classification number: H01L51/0097 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B17/06 ,  B32B27/20 ,  B32B27/286 ,  B32B27/30 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B37/02 ,  B32B37/10 ,  B32B37/1292 ,  B32B37/18 ,  B32B38/10 ,  B32B2250/05 ,  B32B2255/20 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/40 ,  B32B2307/50 ,  B32B2307/536 ,  B32B2307/558 ,  B32B2310/0843 ,  B32B2315/08 ,  B32B2457/20 ,  H01L51/003 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.