公开(公告)号：US20240321997A1

公开(公告)日：2024-09-26

申请号：US18580537

申请日：2021-07-20

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Hailong YU ,  Xuezhen JING ,  Jinhui MENG

IPC分类号： H01L29/49 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/4966 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

摘要： A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes: providing a substrate, where gate structures are formed on the substrate, source-drain doped regions are formed in the substrate on two sides of each gate structure, and a bottom dielectric layer between adjacent gate structures is formed on the source-drain doped regions; forming liner metal layers in contact with the gate structures on top surfaces of the gate structures, where the liner metal layers are made of a pure metal; forming a top dielectric layer on the bottom dielectric layer to cover the liner metal layers; and forming gate plugs penetrating through the top dielectric layer and in contact with the liner metal layers using a first selective deposition process.

公开(公告)号：US20220077291A1

公开(公告)日：2022-03-10

申请号：US17446017

申请日：2021-08-26

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Hailong YU ,  Xuezhen JING ,  Hao ZHANG ,  Tiantian ZHANG ,  Jinhui MENG

IPC分类号： H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/768

摘要： A semiconductor structure and a fabrication method of the semiconductor structure are provided. The method includes providing a substrate, forming a first dielectric layer and a plurality of gate structures, forming source-drain doped regions, and forming a source-drain plug. The first dielectric layer covers surfaces of the gate structure, the source-drain doped region and the source-drain plug. The method also includes forming a first plug in the first dielectric layer, and forming a second dielectric layer on the first dielectric layer. The first plug is in contact with a top surface of one of the source-drain plug and the gate structure. The second dielectric layer covers the first plug. Further, the method includes forming a second plug material film in the first and second dielectric layers. The second plug material film is in contact with the top surface of one of the source-drain plug and the gate structure.

公开(公告)号：US20210050302A1

公开(公告)日：2021-02-18

申请号：US16991655

申请日：2020-08-12

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Tiantian ZHANG ,  Xuezhen JING ,  Zheyuan TONG ,  Zhangru XIAO ,  Hailong YU

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L21/768

摘要： A semiconductor device and method for forming same are provided. The method for forming a semiconductor device includes: providing a base; forming an interlayer dielectric layer over the base; forming contact holes by etching the interlayer dielectric layer; forming a barrier layer over the base in the contact holes; and forming a metal layer over the barrier layer. The contact holes exposed a portion of a surface of the base. The metal layer fully filled the contact hole.

公开(公告)号：US20240258238A1

公开(公告)日：2024-08-01

申请号：US18565406

申请日：2021-05-31

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Zengsheng XU ,  Xuezhen JING ,  Hao ZHANG ,  Tiantian ZHANG ,  Hailong YU

IPC分类号： H01L23/532 ,  H01L21/285

CPC分类号： H01L23/53257 ,  H01L21/28568

摘要： A semiconductor structure includes a substrate, a covering layer on the substrate, an auxiliary layer on the covering layer, a first dielectric layer on surfaces of the substrate and the auxiliary layer, and a conductive structure in the first dielectric layer. The semiconductor structure also includes a second dielectric layer on surfaces of the first dielectric layer and the conductive structure, a first opening in the second dielectric layer and the first dielectric layer, and a second opening in the second dielectric layer. The first opening exposes the auxiliary layer, and the second opening exposes the top surface of the conductive structure. A first conductive layer is in the first opening, and a second conductive layer is in the second opening. A growth rate of the first conductive layer over the auxiliary layer is higher than the growth rate of the first conductive layer over the covering layer.

公开(公告)号：US20230100058A1

公开(公告)日：2023-03-30

申请号：US17955955

申请日：2022-09-29

申请人： Semiconductor Manufacturing International (Beijing) Corporation ,  Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Hailong YU ,  Bo SU ,  Hansu OH

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L21/02 ,  H01L21/311 ,  H01L21/285

摘要： Semiconductor structure and forming method thereof are provided. The forming method includes: providing a substrate; forming a plurality of initial composite layers on a portion of the substrate; forming a plurality of source and drain layers on surfaces of the plurality of channel layers exposed by a first opening and grooves by using a selective epitaxial growth process, the plurality of source and drain layers being parallel to a first direction and distributed along a second direction, the second direction being parallel to a normal direction of the substrate, and gaps being between adjacent source and drain layers; forming contact layers on surfaces of the plurality of source and drain layers and in the gaps; and forming a conductive structure on a surface of a contact layer on a source and drain layer of the plurality of source and drain layers.

公开(公告)号：US20210050258A1

公开(公告)日：2021-02-18

申请号：US16989299

申请日：2020-08-10

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Hailong YU ,  Jingjing TAN ,  Hao ZHANG

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/535

摘要： A method for forming a semiconductor structure includes providing an initial semiconductor structure formed in a substrate; forming a dielectric layer on the substrate; forming a first opening in the dielectric layer to expose a portion of the initial semiconductor structure; etching the portion of the initial semiconductor structure exposed at a bottom of the first opening to form a second opening in the initial semiconductor structure; and forming a contact layer in the second opening and a third opening in the contact layer. The contact layer has a concave top surface, and the third opening is located above the concave top surface of the contact layer and under the first opening. The method further includes forming a conductive structure in the first opening and the third opening.

公开(公告)号：US20210090949A1

公开(公告)日：2021-03-25

申请号：US17021377

申请日：2020-09-15

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Bijing) Corporation

发明人： Hailong YU ,  Jingjing TAN ,  Xuezhen JING ,  Wen GUO

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

摘要： A semiconductor structure and its fabrication method are provided. The method includes: providing a substrate and a first metal layer in the substrate; forming a dielectric layer with a first opening exposing a portion of a top surface of the first metal layer on the substrate; bombarding the portion of the top surface of the first metal layer exposed by the first opening, by using a first sputtering treatment, to make metal materials on the top surface of the first metal layer be sputtered onto sidewalls of the first opening to form a first adhesion layer; and forming a second metal layer on a surface of the first adhesion layer and on the exposed portion of the top surface of the first metal layer using a first metal selective growth process.

公开(公告)号：US20240203877A1

公开(公告)日：2024-06-20

申请号：US18535825

申请日：2023-12-11

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Bo SU ,  Hailong YU

IPC分类号： H01L23/528 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L23/5283 ,  H01L21/823807 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

摘要： A semiconductor structure and a formation method of the semiconductor structure are provided in the present disclosure. The semiconductor structure includes a substrate, including a first device region and a second device region; a first device layer on the substrate, where a first transistor at the first device region is in the first device layer; a second device layer on the first device layer, where a second transistor at the second device region is in the second device layer, and projections of the first transistor and the second transistor on a surface of the substrate are non-overlapped with each other; and an electrical interconnection structure in the first device layer and the second device layer, where the electrical interconnection structure is electrically connected to each of the first transistor and the second transistor.

公开(公告)号：US20240063298A1

公开(公告)日：2024-02-22

申请号：US18234210

申请日：2023-08-15

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Bo SU ,  Hailong YU ,  Jing ZHANG ,  Hansu OH

IPC分类号： H01L29/775 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/775 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66439

摘要： A semiconductor structure includes a plurality of composite layers formed on a portion of a substrate. An interlayer dielectric layer is formed on the substrate and the plurality of composite layers. A first gate trench is formed on the interlayer dielectric layer, and a gate sidewall is formed on a side surface of the first gate trench. The composite layer includes stacked channel layers and a second gate trench between neighboring channel layers. The first gate trench and the gate sidewall cross over a portion of a sidewall and a portion of a top surface of the composite layer, and the first gate trench communicates with the second gate trench. A gate is formed in the first and second gate trenches. The doping region is formed in a channel layer. The source-drain layer is formed in the composite layer on two sides of the gate structure.