公开(公告)号：US20010018922A1

公开(公告)日：2001-09-06

申请号：US09816707

申请日：2001-03-23

Applicant: Semitool, Inc.

Inventor： Michael Jolley

IPC: B08B003/00 ,  B08B005/00

CPC classification number: H01L21/02074 ,  C23G1/20 ,  H01L21/02063 ,  Y10S134/902

Abstract: In a method for cleaning a copper surface of a semiconductor wafer or article, nitrogen gas is bubbled or dissolved into a strong alkaline solution, displacing dissolved oxygen from the solution. A nitrogen gas environment is provided over the copper surface. The alkaline solution is then applied to the copper surface. The copper etch rate is greatly reduced. The method is useful in removing residual polishing slurry after a chemical-mechanical polishing step, and for removing residues left in via holes after plasma etching.

公开(公告)号：US20020168863A1

公开(公告)日：2002-11-14

申请号：US10184141

申请日：2002-06-26

Applicant: Semitool, Inc.

Inventor： Brian Aegerter ,  Curt T. Dundas ,  Michael Jolley ,  Tom L. Ritzdorf ,  Steven L. Peace ,  Gary L. Curtis ,  Raymon F. Thompson

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/67017 ,  C23F1/18 ,  H01L21/32134 ,  H01L21/6708 ,  Y10S438/928 ,  Y10S438/963

Abstract: In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece while the workpiece and a reactor holding the workpiece are spinning. The flow rate of the processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

公开(公告)号：US20040023494A1

公开(公告)日：2004-02-05

申请号：US10632495

申请日：2003-07-31

Applicant: Semitool, Inc.

Inventor： Brian K. Aegerter ,  Curt T. Dundas ,  Tom L. Ritzdorf ,  Gary L. Curtis ,  Michael Jolley

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/6715 ,  C23F1/18 ,  C23F1/30 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/6708 ,  Y10S134/902 ,  Y10S438/906

Abstract: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract translation: 本发明提供了一种用于处理具有前侧，后侧和外周的工件的方法。 根据该过程，从前侧或后侧或工件中的至少一个的外周边缘选择性地施加或排除处理流体。 处理流体的排除和/或应用通过将一种或多种加工流体施加到工件上而发生，因为工件和相应的反应器围绕大致正交于被加工工件的面的中心的旋转轴旋转。 使用一种或多种加工流体的流量，流体压力和/或旋转速率来控制从外周边缘选择性地施加或排除处理流体的程度。

公开(公告)号：US20020144973A1

公开(公告)日：2002-10-10

申请号：US10150631

申请日：2002-05-17

Applicant: Semitool, Inc.

Inventor： Brian Aegerter ,  Curt T. Dundas ,  Michael Jolley ,  Tom L. Ritzdorf ,  Steven L. Peace ,  Gary L. Curtis ,  Raymon F. Thompson

IPC: H01B013/00

CPC classification number: H01L21/67017 ,  C23F1/18 ,  H01L21/32134 ,  H01L21/6708 ,  Y10S438/928 ,  Y10S438/963

Abstract: In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece while the workpiece and a reactor holding the workpiece are spinning. The flow rate of the processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract translation: 在处理诸如半导体晶片的工件的处理中，处理流体被选择性地从工件的前侧或后侧中的至少一个的外周边缘施加或排除。 通过在工件和保持工件的反应器旋转的同时将一种或多种加工流体施加到工件来发生加工流体的排除和/或应用。 处理流体的流量，流体压力和/或旋转速率用于控制从外周边缘选择性地施加或排除处理流体的程度。