公开(公告)号：US20030056814A1

公开(公告)日：2003-03-27

申请号：US10200043

申请日：2002-07-19

Applicant: Semitool, Inc.

Inventor： Jon Kuntz ,  Steven Peace ,  Ed Derks ,  Brian Aegerter

IPC: B08B003/00 ,  B08B001/02 ,  B65G049/07 ,  B08B007/00

CPC classification number: H01L21/68785 ,  H01L21/67057 ,  H01L21/67086 ,  H01L21/6715 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/14 ,  Y10S438/906 ,  Y10S438/913

Abstract: A process system for processing a semiconductor wafer or other similar flat workpiece has a head including a workpiece holder. A motor in the head spins the workpiece. A head lifter lowers the head to move the workpiece into a bath of liquid in a bowl. Sonic energy is introduced into the liquid and travels through the liquid to the workpiece, to assist in processing. The head is lifted to bring the workpiece to a rinse position. The bath liquid is drained. The workpiece is rinsed via radial spray nozzles in the base. The head is lifted to a dry position. A reciprocating swing arm sprays a drying fluid onto the bottom surface of the spinning wafer, to dry the wafer.

Abstract translation: 用于处理半导体晶片或其它类似的平坦工件的处理系统具有包括工件保持器的头部。 头部的电机旋转工件。 头部升降器降低头部以将工件移动到碗中的液体浴中。 声能被引入到液体中并通过液体传送到工件，以帮助加工。 抬起头部以使工件进入冲洗位置。 浴液被排出。 工件通过基座中的径向喷嘴冲洗。 头部被抬起到干燥的位置。 往复摇摆臂将干燥流体喷射到旋转晶片的底表面上，以干燥晶片。

公开(公告)号：US20020168863A1

公开(公告)日：2002-11-14

申请号：US10184141

申请日：2002-06-26

Applicant: Semitool, Inc.

Inventor： Brian Aegerter ,  Curt T. Dundas ,  Michael Jolley ,  Tom L. Ritzdorf ,  Steven L. Peace ,  Gary L. Curtis ,  Raymon F. Thompson

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/67017 ,  C23F1/18 ,  H01L21/32134 ,  H01L21/6708 ,  Y10S438/928 ,  Y10S438/963

Abstract: In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece while the workpiece and a reactor holding the workpiece are spinning. The flow rate of the processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

公开(公告)号：US20020189652A1

公开(公告)日：2002-12-19

申请号：US10223974

申请日：2002-08-20

Applicant: Semitool, Inc.

Inventor： Steven L. Peace ,  Gary L. Curtis ,  Raymon F. Thompson ,  Brian Aegerter ,  Curt T. Dundas

IPC: B08B003/00

CPC classification number: H01L21/6715 ,  B08B3/04 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6708 ,  Y10S118/90 ,  Y10S438/906 ,  Y10S438/913

Abstract: A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location. The fluid flows outwardly uniformly and in all directions. A wafer support automatically lifts the wafer, so that it can be removed from the reactor by a robot, when the rotors separate from each other after processing.

Abstract translation: 用于处理半导体晶片或类似物品的方法包括在旋转晶片时旋转晶片并将其施加到晶片的第一侧的步骤。 流体通过离心力在晶片的第一侧上在所有方向上径向向外流动。 当流体从晶片的圆周边缘流出时，其被包含在环形储存器中，使得流体也流到晶片的第二侧的外部环形区域。 开口允许流体从储存器流出。 开口限定分流线的位置，超过该分隔线，流体不会在晶片的第二侧上行进。 用于处理半导体晶片或类似物品的装置包括具有由上下转子形成的处理室的反应器。 晶片支撑在转子之间。 转子由旋转电机旋转。 处理流体在中心位置被引入到晶片的顶表面或底表面上，或在两个表面上。 流体向外均匀地向各个方向流动。 晶片支架自动提升晶片，从而当转子在加工后彼此分离时，可以通过机器人将其从反应器中移除。

公开(公告)号：US20020185163A1

公开(公告)日：2002-12-12

申请号：US10202074

申请日：2002-07-23

Applicant: Semitool, Inc.

Inventor： Steven L. Peace ,  Gary L. Curtis ,  Raymon F. Thompson ,  Brian Aegerter ,  Curt T. Dundas

IPC: B08B003/00

CPC classification number: H01L21/6715 ,  B08B3/04 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6708 ,  Y10S118/90 ,  Y10S438/906 ,  Y10S438/913

Abstract: An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location. The fluid flows outwardly uniformly and in all directions. A wafer support automatically lifts the wafer, so that it can be removed from the reactor by a robot, when the rotors separate from each other after processing.

Abstract translation: 用于处理半导体晶片或类似物品的装置包括具有由上下转子形成的处理室的反应器。 晶片支撑在转子之间。 转子由旋转电机旋转。 处理流体在中心位置被引入到晶片的顶表面或底表面上，或在两个表面上。 流体向外均匀地向各个方向流动。 晶片支架自动提升晶片，从而当转子在加工后彼此分离时，它可以由机器人从反应器中移出。

公开(公告)号：US20020144973A1

公开(公告)日：2002-10-10

申请号：US10150631

申请日：2002-05-17

Applicant: Semitool, Inc.

Inventor： Brian Aegerter ,  Curt T. Dundas ,  Michael Jolley ,  Tom L. Ritzdorf ,  Steven L. Peace ,  Gary L. Curtis ,  Raymon F. Thompson

IPC: H01B013/00

CPC classification number: H01L21/67017 ,  C23F1/18 ,  H01L21/32134 ,  H01L21/6708 ,  Y10S438/928 ,  Y10S438/963

Abstract: In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece while the workpiece and a reactor holding the workpiece are spinning. The flow rate of the processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract translation: 在处理诸如半导体晶片的工件的处理中，处理流体被选择性地从工件的前侧或后侧中的至少一个的外周边缘施加或排除。 通过在工件和保持工件的反应器旋转的同时将一种或多种加工流体施加到工件来发生加工流体的排除和/或应用。 处理流体的流量，流体压力和/或旋转速率用于控制从外周边缘选择性地施加或排除处理流体的程度。