Process and apparatus for treating a workpiece such as a semiconductor wafer
    1.
    发明申请
    Process and apparatus for treating a workpiece such as a semiconductor wafer 审中-公开
    用于处理诸如半导体晶片的工件的工艺和设备

    公开(公告)号:US20020157686A1

    公开(公告)日:2002-10-31

    申请号:US09925884

    申请日:2001-08-06

    Applicant: Semitool, Inc.

    Abstract: In a system for cleaning a workpiece or wafer, a boundary layer of heated liquid is formed on the workpiece surface. Ozone is provided around the workpiece. The ozone diffuses through the boundary layer and chemically reacts with contaminants on the workpiece surface. A jet of high velocity heated liquid is directed against the workpiece, to physically dislodge or remove a contaminant from the workpiece. The jet penetrates through the boundary layer at the point of impact. The boundary layer otherwise remains largely undisturbed. Preferably, the liquid includes water, and may also include a chemical. Steam may also be jetted onto the workpiece, with the steam also physically removing contaminants, and also heating the workpiece to speed up chemical cleaning. The workpiece and the jet of liquid are moved relative to each other, so that substantially all areas of the workpiece surface facing the jet are exposed at least momentarily to the jet. Sonic or electromagnetic energy may also be introduced to the workpiece.

    Abstract translation: 在用于清洁工件或晶片的系统中,在工件表面上形成加热液体的边界层。 在工件周围提供臭氧。 臭氧通过边界层扩散并与工件表面上的污染物发生化学反应。 高速加热液体的喷嘴被引导到工件上,以物理地移除或去除工件上的污染物。 喷射器在冲击点穿过边界层。 否则边界层大体上不受干扰。 优选地,液体包括水,并且还可以包括化学品。 蒸汽也可以喷射到工件上,蒸汽还物理地去除污染物,并且还加热工件以加速化学清洁。 工件和液体射流相对于彼此移动,使得面对射流的工件表面的基本上所有区域至少暴露于射流。 也可以将声波或电磁能引入到工件中。

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