公开(公告)号：US07320905B2

公开(公告)日：2008-01-22

申请号：US11024074

申请日：2004-12-28

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Ritsuko Kawasaki

IPC分类号： H01L21/00

CPC分类号： H01L27/1274 ,  G02F1/13454 ,  G02F1/136227 ,  H01L27/1214 ,  H01L27/1296 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78678

摘要： This invention improves TFT characteristics by making an interface between an active layer, especially a region forming a channel formation region and an insulating film excellent, and provides a semiconductor device provided with a semiconductor circuit made of a semiconductor element having uniform characteristics and a method of fabricating the same. In order to achieve the object, a gate wiring line is formed on a substrate or an under film, a gate insulating film, an initial semiconductor film, and an insulating film are formed into a laminate without exposing them to the atmosphere, and after the initial semiconductor film is crystallized by irradiation of infrared light or ultraviolet light (laser light) through the insulating film, patterning is carried out to obtain an active layer and a protection film each having a desired shape, and then, a resist mask is used to fabricate the semiconductor device provided with an LDD structure.

摘要翻译： 本发明通过在有源层，特别是形成沟道形成区域的区域和绝缘膜之间形成界面来改善TFT特性，并且提供了一种具有由具有均匀特性的半导体元件制成的半导体电路的半导体器件和一种 制作相同。 为了实现该目的，在基板或下膜上形成栅极布线，将栅极绝缘膜，初始半导体膜和绝缘膜形成为层叠体而不将其暴露在大气中，并且在 初始半导体膜通过绝缘膜照射红外光或紫外线（激光）而结晶，进行构图以获得各自具有期望形状的有源层和保护膜，然后使用抗蚀剂掩模 制造具有LDD结构的半导体器件。

公开(公告)号：US06380011B1

公开(公告)日：2002-04-30

申请号：US09363954

申请日：1999-07-29

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Ritsuko Kawasaki

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L29/4908

摘要： To provide a technique required for purifying the interface between an active layer and an insulating film. On a substrate (101), a gate wiring (103) is formed and the surface thereof is covered with a gate oxide film (104). Then, a first insulating film (105a), a second insulating film (105b), a semiconductor film (106) and a protective film (107) are sequentially formed and layered without exposing them to the air. Further, the semiconductor film (106) is irradiated with laser light through the protective film (107). In this way, a TFT may be given good characteristics by completely purifying the interface of the semiconductor film.

摘要翻译： 提供纯化有源层和绝缘膜之间的界面所需的技术。 在基板（101）上形成栅极布线（103），其表面被栅极氧化膜（104）覆盖。 然后，依次形成并层叠第一绝缘膜（105a），第二绝缘膜（105b），半导体膜（106）和保护膜（107），而不将其暴露在空气中。 此外，半导体膜（106）通过保护膜（107）照射激光。 以这种方式，通过完全净化半导体膜的界面，可以赋予TFT良好的特性。

公开(公告)号：US07635866B2

公开(公告)日：2009-12-22

申请号：US11553009

申请日：2006-10-26

申请人： Setsuo Nakajima ,  Ritsuko Kawasaki

发明人： Setsuo Nakajima ,  Ritsuko Kawasaki

IPC分类号： H01L31/036 ,  H01L31/00

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78645

摘要： Protrusions called ridges are formed on the surface of a crystalline semiconductor film formed by a laser crystallization method or the like. A heat absorbing layer are formed below a semiconductor film. When the semiconductor film is crystallized by laser, a temperature difference is produced between a semiconductor film 1010 positioned above a heat absorbing layer 1011 and a semiconductor film 1013 of the other region to produce a difference in thermal expansion at the boundary of the outside end 1015 of the heat absorbing layer. This difference produces a strain to form a surface wave. The surface wave starting at the outer periphery of the heat absorbing layer is formed in the vicinity of the heat absorbing layer. When the semiconductor layer is solidified after it is melted, the protrusions of the surface wave remain as protrusions after the semiconductor film is solidified.

摘要翻译： 在通过激光结晶法等形成的结晶半导体膜的表面上形成称为隆起的突起。 在半导体膜的下方形成有吸热层。 当通过激光使半导体膜结晶时，在位于吸热层1011之上的半导体膜1010与另一区域的半导体膜1013之间产生温度差，以产生外端1015的边界处的热膨胀差 的吸热层。 该差异产生形成表面波的应变。 在吸热层的外周形成的表面波形成在吸热层的附近。 当半导体层在熔融之后固化时，半导体膜固化后表面波的突起保持为突起。

公开(公告)号：US20060163580A1

公开(公告)日：2006-07-27

申请号：US11388476

申请日：2002-04-08

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Ritsuko Kawasaki

IPC分类号： H01L29/04

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L29/4908

摘要： To provide a technique required for purifying the interface between an active layer and an insulating film. On a substrate (101), a gate wiring (103) is formed and the surface thereof is covered with a gate oxide film (104). Then, a first insulating film (105a), a second insulating film (105b), a semiconductor film (106) and a protective film (107) are sequentially formed and layered without exposing them to the air. Further, the semiconductor film (106) is irradiated with laser light through the protective film (107). In this way, a TFT may be given good characteristics by completely purifying the interface of the semiconductor film.

摘要翻译： 提供纯化有源层和绝缘膜之间的界面所需的技术。 在基板（101）上形成栅极布线（103），其表面被栅极氧化膜（104）覆盖。 然后，依次形成并层叠第一绝缘膜（105a），第二绝缘膜（105b），半导体膜（106）和保护膜（107），而不将其暴露在空气中。 此外，半导体膜（106）通过保护膜（107）照射激光。 以这种方式，通过完全净化半导体膜的界面，可以赋予TFT良好的特性。

公开(公告)号：US07351617B2

公开(公告)日：2008-04-01

申请号：US11388476

申请日：2002-04-08

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Ritsuko Kawasaki

IPC分类号： H01L21/00

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L29/4908

摘要： To provide a technique required for purifying the interface between an active layer and an insulating film. On a substrate (101), a gate wiring (103) is formed and the surface thereof is covered with a gate oxide film (104). Then, a first insulating film (105a), a second insulating film (105b), a semiconductor film (106) and a protective film (107) are sequentially formed and layered without exposing them to the air. Further, the semiconductor film (106) is irradiated with laser light through the protective film (107). In this way, a TFT may be given good characteristics by completely purifying the interface of the semiconductor film.

摘要翻译： 提供纯化有源层和绝缘膜之间的界面所需的技术。 在基板（101）上形成栅极布线（103），其表面被栅极氧化膜（104）覆盖。 然后，依次形成并层叠第一绝缘膜（105a），第二绝缘膜（105b），半导体膜（106）和保护膜（107），而不将其暴露在空气中。 此外，半导体膜（106）通过保护膜（107）照射激光。 以这种方式，通过完全净化半导体膜的界面，可以赋予TFT良好的特性。

公开(公告)号：US07217605B2

公开(公告)日：2007-05-15

申请号：US09988389

申请日：2001-11-19

申请人： Ritsuko Kawasaki ,  Setsuo Nakajima

发明人： Ritsuko Kawasaki ,  Setsuo Nakajima

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1281 ,  H01L27/1285

摘要： A crystalline semiconductor film having crystal grains of large grain size or crystal grains in which the position and the size are controlled is formed to manufacture a TFT, whereby a semiconductor device that enables a high-speed operation is realized. First, a reflecting member is provided on a rear surface side of a substrate on which a semiconductor film is formed (semiconductor film substrate). When a front surface side of the semiconductor film substrate is irradiated with a laser beam that penetrates the semiconductor film substrate, the laser beam is reflected by the reflecting member to irradiate the semiconductor film from the rear surface side. With this method, an effective energy density is raised in the semiconductor film, and an output time is made long. Thus, the cooling rate of the semiconductor film is made gentle and crystal grains of large grain size are formed. Further, the front surface side of the semiconductor film substrate is irradiated with the laser beam by using a substrate on which a reflecting layer is partially formed as the reflecting member, whereby the semiconductor film is partially irradiated with the laser beam from the rear surface side. Thus, a temperature distribution is generated in the semiconductor film, and the location where a lateral growth is generated and the lateral direction can be controlled. Therefore, the crystal grains of large grain size can be obtained.

摘要翻译： 形成晶体半导体膜，其具有大晶粒尺寸的晶粒或其中控制位置和尺寸的晶粒，以制造TFT，从而实现能够进行高速操作的半导体器件。 首先，在其上形成有半导体膜的基板的背面侧（半导体膜基板）上设置反射部件。 当半导体薄膜基板的前表面侧被穿透半导体薄膜基板的激光束照射时，激光束被反射部件反射，从背面照射半导体薄膜。 利用该方法，在半导体膜中提高有效的能量密度，并且输出时间长。 因此，半导体膜的冷却速度变得平缓，并且形成大晶粒尺寸的晶粒。 此外，通过使用其上部分形成有反射层的基板作为反射部件，用激光束照射半导体膜基板的正面侧，由此半导体膜部分地从后表面侧照射激光束 。 因此，在半导体膜中产生温度分布，并且可以控制产生横向生长的位置和横向方向。 因此，可以获得大粒径的晶粒。

公开(公告)号：US20070051957A1

公开(公告)日：2007-03-08

申请号：US11553009

申请日：2006-10-26

申请人： Setsuo Nakajima ,  Ritsuko Kawasaki

发明人： Setsuo Nakajima ,  Ritsuko Kawasaki

IPC分类号： H01L29/00

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78645

摘要： Protrusions called ridges are formed on the surface of a crystalline semiconductor film formed by a laser crystallization method or the like. A heat absorbing layer are formed below a semiconductor film. When the semiconductor film is crystallized by laser, a temperature difference is produced between a semiconductor film 1010 positioned above a heat absorbing layer 1011 and a semiconductor film 1013 of the other region to produce a difference in thermal expansion at the boundary of the outside end 1015 of the heat absorbing layer. This difference produces a strain to form a surface wave. The surface wave starting at the outer periphery of the heat absorbing layer is formed in the vicinity of the heat absorbing layer. When the semiconductor layer is solidified after it is melted, the protrusions of the surface wave remain as protrusions after the semiconductor film is solidified.

摘要翻译： 在通过激光结晶法等形成的结晶半导体膜的表面上形成称为隆起的突起。 在半导体膜的下方形成有吸热层。 当通过激光使半导体膜结晶时，在位于吸热层1011上方的半导体膜1010与另一区域的半导体膜1013之间产生温度差，以产生外端1015的边界处的热膨胀差 的吸热层。 该差异产生形成表面波的应变。 在吸热层的外周形成的表面波形成在吸热层的附近。 当半导体层在熔融之后固化时，半导体膜固化后表面波的突起保持为突起。

公开(公告)号：US07129522B2

公开(公告)日：2006-10-31

申请号：US10737909

申请日：2003-12-18

申请人： Setsuo Nakajima ,  Ritsuko Kawasaki

发明人： Setsuo Nakajima ,  Ritsuko Kawasaki

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78645

摘要： Protrusions called ridges are formed on the surface of a crystalline semiconductor film formed by a laser crystallization method or the like. A heat absorbing layer are formed below a semiconductor film. When the semiconductor film is crystallized by laser, a temperature difference is produced between a semiconductor film 1010 positioned above a heat absorbing layer 1011 and a semiconductor film 1013 of the other region to produce a difference in thermal expansion at the boundary of the outside end 1015 of the heat absorbing layer. This difference produces a strain to form a surface wave. The surface wave starting at the outer periphery of the heat absorbing layer is formed in the vicinity of the heat absorbing layer. When the semiconductor layer is solidified after it is melted, the protrusions of the surface wave remain as protrusions after the semiconductor film is solidified.

公开(公告)号：US06838324B2

公开(公告)日：2005-01-04

申请号：US09821473

申请日：2001-03-29

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Ritsuko Kawasaki

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L27/1274 ,  G02F1/13454 ,  G02F1/136227 ,  H01L27/1214 ,  H01L27/1296 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78678

摘要： This invention improves TFT characteristics by making an interface between an active layer, especially a region forming a channel formation region and an insulating film excellent, and provides a semiconductor device provided with a semiconductor circuit made of a semiconductor element having uniform characteristics and a method of fabricating the same. In order to achieve the object, a gate wiring line is formed on a substrate or an under film, a gate insulating film, an initial semiconductor film, and an insulating film are formed into a laminate without exposing them to the atmosphere, and after the initial semiconductor film is crystallized by irradiation of infrared light or ultraviolet light (laser light) through the insulating film, patterning is carried out to obtain an active layer and a protection film each having a desired shape, and then, a resist mask is used to fabricate the semiconductor device provided with an LDD structure.

摘要翻译： 本发明通过在有源层，特别是形成沟道形成区域的区域和绝缘膜之间形成界面来改善TFT特性，并且提供了一种具有由具有均匀特性的半导体元件制成的半导体电路的半导体器件和一种 制作相同。 为了实现该目的，在基板或下膜上形成栅极布线，将栅极绝缘膜，初始半导体膜和绝缘膜形成为层叠体而不将其暴露在大气中，并且在 初始半导体膜通过绝缘膜照射红外光或紫外线（激光）而结晶，进行构图以获得各自具有期望形状的有源层和保护膜，然后使用抗蚀剂掩模 制造具有LDD结构的半导体器件。

公开(公告)号：US06780687B2

公开(公告)日：2004-08-24

申请号：US09768618

申请日：2001-01-25

申请人： Setsuo Nakajima ,  Ritsuko Kawasaki

发明人： Setsuo Nakajima ,  Ritsuko Kawasaki

IPC分类号： H01L2100

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78645

摘要： Protrusions called ridges are formed on the surface of a crystalline semiconductor film formed by a laser crystallization method or the like. A heat absorbing layer are formed below a semiconductor film. When the semiconductor film is crystallized by laser, a temperature difference is produced between a semiconductor film 1010 positioned above a heat absorbing layer 1011 and a semiconductor film 1013 of the other region to produce a difference in thermal expansion at the boundary of the outside end 1015 of the heat absorbing layer. This difference produces a strain to form a surface wave. The surface wave starting at the outer periphery of the heat absorbing layer is formed in the vicinity of the heat absorbing layer. When the semiconductor layer is solidified after it is melted, the protrusions of the surface wave remain as protrusions after the semiconductor film is solidified.

摘要翻译： 在通过激光结晶法等形成的结晶半导体膜的表面上形成称为隆起的突起。 在半导体膜的下方形成有吸热层。 当通过激光使半导体膜结晶时，在位于吸热层1011上方的半导体膜1010与另一区域的半导体膜1013之间产生温度差，以产生外端1015的边界处的热膨胀差 的吸热层。 该差异产生形成表面波的应变。 在吸热层的外周形成的表面波形成在吸热层的附近。 半导体层熔化后固化，表面波的突起在半导体膜固化后保持为突起。