摘要:
An electronic device includes a functional unit and a current compensation unit. The functional unit operates based on a power supplied by an external host through power supply lines and generates a control signal based on an amount of power consumption of the functional unit. The current compensation unit compensates a change in a power supply current based on the control signal, where the power supply current is a current flowing through the power supply lines.
摘要:
A row decoder circuit includes a decoding unit and first and second wordline driving units. The decoding unit generates a first driving signal and a second driving signal based on a selection signal and wordline voltages. A voltage level of the first driving signal and a voltage level of the second driving signal depend on an operation mode. The first wordline driving unit is connected to a first wordline and outputs one of the first driving signal and the second driving signal as a first wordline driving signal based on first driving control signals. The second wordline driving unit is connected to a second wordline and outputs one of the first driving signal and the second driving signal as a second wordline driving signal based on second driving control signals.
摘要:
A mobile apparatus includes a first body, a second body, a rotary adaptor including an accommodation portion to accommodate the second body, rotatably installed on the first body, and to move the second body to a position where the second body is stacked on the first body and a position where the second body is unfolded, first magnets disposed on the accommodation portion, and second magnets disposed on the second body so as to face the first magnets and having different polarity from the first magnets.
摘要:
A memory card includes: a first memory chip responding to all commands input externally; and a second memory chip responding to commands, among the commands input externally, relevant to reading, programming, and erasing operations with data. Card identification information stored in the first memory chip includes capacity information corresponding to a sum of sizes of the first and second memory chips. The plurality of memory chips of the memory card are useful in designing the memory card with storage capacity in various forms.
摘要:
A voltage controller may include a pulse generator and an internal voltage control circuit coupled to the pulse generator. The pulse generator may be configured to generate a control signal in response to at least one of a mode signal and/or an external voltage. The internal voltage control circuit may be configured to generate an internal voltage at an internal voltage node, and the internal voltage control circuit may include a voltage divider, first and second comparators, and a driver. The voltage divider may be coupled between the internal voltage node and a first reference voltage, and the voltage divider may generate a feedback voltage that is between the internal voltage and the first reference voltage. The first comparator may be configured to generate a first comparison result responsive to comparing the feedback voltage with a second reference voltage, and the second comparator may be configured to generate a second comparison result responsive to comparing the feedback voltage with the second reference voltage in response to the control signal. The driver may be coupled between an external voltage and the internal voltage node, and the driver may be configured to generate the internal voltage responsive to the first and second comparison results. Related methods and smart cards are also discussed.
摘要:
A fluid injector for treating a surface of a flat display panel includes a case provided with a cavity for receiving fluid; a pair of nozzle guiders coupled to the case and disposed facing each other; a gap-adjusting plate disposed between the nozzle guiders to adjust a gap between the nozzle guiders; and a coupling device for coupling the nozzle guiders to the gap-adjusting plate.
摘要:
Provided are a semiconductor device and a method for compensating for a voltage drop of a bit line. The semiconductor device includes at least one monitoring bit line and at least one main memory bit line, and monitors a voltage of the at least one monitoring bit line after a precharging operation and supplies a predetermined compensation current to the at least one monitoring bit line and the at least one main memory bit line based on a monitoring result. Accordingly, it is possible to precisely compensate for a voltage drop occurring in the main memory bit line due to under precharge or leakage current, thereby preventing unnecessary compensation current from being supplied. Therefore, it is possible to stably perform a read operation of the semiconductor device.
摘要:
A memory device in accordance with embodiments of the present invention includes a reference cell array and a plurality of banks. Each of the banks includes memory cells. A plurality of current copier circuits corresponds to the banks, respectively. Each of the current copier circuits copies a reference current flowing through a reference cell array to generate a reference voltage. A plurality of sense blocks correspond to the banks, respectively. Each of the sense blocks includes a plurality of sense amplifiers for sensing data from a corresponding bank in response to the reference voltage from the corresponding current copier circuit. Memory cell lay-out area is reduced, and sense speed is increased.
摘要:
A negative high voltage generator includes a charge providing unit and a voltage conversion unit. The charge providing unit is configured to periodically output a predetermined amount of positive charges received from a supply voltage. The voltage conversion unit is configured to store the positive charges and to discharge the stored positive charges to a ground voltage to generate a negative high voltage having a magnitude larger than a magnitude of the supply voltage.
摘要:
A negative high voltage generator includes a charge providing unit and a voltage conversion unit. The charge providing unit is configured to periodically output a predetermined amount of positive charges received from a supply voltage. The voltage conversion unit is configured to store the positive charges and to discharge the stored positive charges to a ground voltage to generate a negative high voltage having a magnitude larger than a magnitude of the supply voltage.