公开(公告)号：US08669597B2

公开(公告)日：2014-03-11

申请号：US12116200

申请日：2008-05-06

申请人： Shenqing Fang ,  Connie Wang ,  Wen Yu ,  Fei Wang

发明人： Shenqing Fang ,  Connie Wang ,  Wen Yu ,  Fei Wang

IPC分类号： H01L29/66 ,  H01L21/4763

CPC分类号： H01L23/528 ,  H01L21/76807 ,  H01L21/76813 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11524 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit memory device, in one embodiment, includes a substrate having a plurality of bit lines. A first and second inter-level dielectric layer are successively disposed on the substrate. Each of a plurality of source lines and staggered bit line contacts extend through the first inter-level dielectric layer. Each of a plurality of source line vias and a plurality of staggered bit line vias extend through the second inter-level dielectric layer to each respective one of the plurality of source lines and the plurality of staggered bit line contacts. The source lines and staggered bit line contacts that extend through the first inter-level dielectric layer are formed together by a first set of fabrication processes. The source line vias and staggered bit line contacts that extend through the second inter-level dielectric layer are also formed together by a second set of fabrication processes.

摘要翻译： 在一个实施例中，集成电路存储器件包括具有多个位线的衬底。 第一和第二层间电介质层依次设置在基板上。 多个源极线和交错位线触点中的每一个延伸穿过第一层间电介质层。 多个源极线路通孔和多个交错位线通孔中的每一条通过第二级间介电层延伸到多条源极线路和多条交错位线触点中的每一个。 通过第一组制造工艺一起形成延伸穿过第一层间电介质层的源极线和交错位线触点。 延伸穿过第二层间电介质层的源极线通孔和交错位线触点也通过第二组制造工艺一起形成。

公开(公告)号：US20100078815A1

公开(公告)日：2010-04-01

申请号：US12286149

申请日：2008-09-29

申请人： Zheng Wang ,  Connie Wang ,  Erik Wilson ,  Wen Yu ,  Robert Chiu

发明人： Zheng Wang ,  Connie Wang ,  Erik Wilson ,  Wen Yu ,  Robert Chiu

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L23/485 ,  H01L21/76877 ,  H01L23/53252 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11517 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrically conductive interconnect is provided through an opening in a dielectric layer, electrically connecting two conductive layers. In one embodiment, the interconnect is formed by ruthenium entirely filling the opening in the dielectric layer. In another embodiment, an adhesion layer of titanium is provided in the opening prior to providing the ruthenium. In using this approach, an aspect ratio (i.e., the ratio of the length of the interconnect to the width thereof) of 20:1 or greater is achievable.

摘要翻译： 导电互连通过介电层中的开口设置，电连接两个导电层。 在一个实施例中，互连由完全填充介电层中的开口的钌形成。 在另一个实施方案中，在提供钌之前，在开口中提供钛的粘附层。 在使用这种方法时，可实现20:1或更大的纵横比（互连长度与其宽度之比）。

公开(公告)号：US09299643B2

公开(公告)日：2016-03-29

申请号：US12286149

申请日：2008-09-29

申请人： Zheng Wang ,  Connie Wang ,  Erik Wilson ,  Wen Yu ,  Robert Chiu

发明人： Zheng Wang ,  Connie Wang ,  Erik Wilson ,  Wen Yu ,  Robert Chiu

IPC分类号： H01L29/40 ,  H01L23/485 ,  H01L21/768 ,  H01L23/532 ,  H01L27/105 ,  H01L27/115

CPC分类号： H01L23/485 ,  H01L21/76877 ,  H01L23/53252 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11517 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrically conductive interconnect is provided through an opening in a dielectric layer, electrically connecting two conductive layers. In one embodiment, the interconnect is formed by ruthenium entirely filling the opening in the dielectric layer. In another embodiment, an adhesion layer of titanium is provided in the opening prior to providing the ruthenium. In using this approach, an aspect ratio (i.e., the ratio of the length of the interconnect to the width thereof) of 20:1 or greater is achievable.

摘要翻译： 导电互连通过介电层中的开口设置，电连接两个导电层。 在一个实施例中，互连由完全填充介电层中的开口的钌形成。 在另一个实施方案中，在提供钌之前，在开口中提供钛的粘附层。 在使用这种方法时，可实现20:1或更大的纵横比（互连长度与其宽度之比）。

公开(公告)号：US07880221B2

公开(公告)日：2011-02-01

申请号：US12340274

申请日：2008-12-19

申请人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

发明人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

IPC分类号： H01L29/792

CPC分类号： H01L27/11534 ,  H01L21/26506 ,  H01L21/823425 ,  H01L21/823462 ,  H01L21/823468 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11568 ,  H01L29/66507 ,  H01L29/78

摘要： A method of forming an electronic device is provided that includes selectively implanting ions into a workpiece, wherein ions are implanted into a first region of the workpiece that includes a semiconductor material, while substantially none of the ions are implanted into a second region of the workpiece that also includes a semiconductor material. The method further includes depositing a metal-containing film over the first region and the second region after selectively implanting, and then reacting the metal-containing film with the semiconductor material to form a first metal-semiconductor film within the first region and a second metal-semiconductor film within the second region. The first metal-semiconductor film has a first thickness and the second metal-semiconductor film has a second thickness that is different from the first thickness.

摘要翻译： 提供一种形成电子器件的方法，其包括选择性地将离子注入到工件中，其中将离子注入到包括半导体材料的工件的第一区域中，而基本上没有离子注入工件的第二区域 其还包括半导体材料。 该方法还包括在选择性地注入之后，在第一区域和第二区域上沉积含金属膜，然后使含金属膜与半导体材料反应，以在第一区域内形成第一金属半导体膜，并且将第二金属 在第二区域内的半导体膜。 第一金属半导体膜具有第一厚度，第二金属半导体膜具有与第一厚度不同的第二厚度。

公开(公告)号：US20060060327A1

公开(公告)日：2006-03-23

申请号：US10948023

申请日：2004-09-23

申请人： Wen Yu ,  Ramchandra Patel ,  Manos Eliades ,  Jack Riddle

发明人： Wen Yu ,  Ramchandra Patel ,  Manos Eliades ,  Jack Riddle

IPC分类号： F28F11/00

CPC分类号： F28F9/0212 ,  F16H57/04 ,  F25B39/04 ,  F25B2339/0441 ,  F25B2500/01 ,  F25B2500/222 ,  F28D1/05375 ,  F28D2021/0084 ,  F28F2220/00

摘要： A heat exchanger for a vehicle is provided, where the heat exchanger includes core having first, and second sets of flow tubes extending between first and second headers and defining separate flow paths. One of the headers includes a first portion in fluid communication with the first set of flow tubes and a second portion defining a receiver/dryer chamber that is in fluid communication with the second set of flow tubes. A dryer is located within the receiver/dryer chamber.

公开(公告)号：US20090140325A1

公开(公告)日：2009-06-04

申请号：US12340274

申请日：2008-12-19

申请人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

发明人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

IPC分类号： H01L29/792

CPC分类号： H01L27/11534 ,  H01L21/26506 ,  H01L21/823425 ,  H01L21/823462 ,  H01L21/823468 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11568 ,  H01L29/66507 ,  H01L29/78

摘要： A method of forming an electronic device is provided that includes selectively implanting ions into a workpiece, wherein ions are implanted into a first region of the workpiece that includes a semiconductor material, while substantially none of the ions are implanted into a second region of the workpiece that also includes a semiconductor material. The method further includes depositing a metal-containing film over the first region and the second region after selectively implanting, and then reacting the metal-containing film with the semiconductor material to form a first metal-semiconductor film within the first region and a second metal-semiconductor film within the second region. The first metal-semiconductor film has a first thickness and the second metal-semiconductor film has a second thickness that is different from the first thickness.

摘要翻译： 提供一种形成电子器件的方法，其包括选择性地将离子注入到工件中，其中将离子注入到包括半导体材料的工件的第一区域中，而基本上没有离子注入工件的第二区域 其还包括半导体材料。 该方法还包括在选择性地注入之后，在第一区域和第二区域上沉积含金属膜，然后使含金属膜与半导体材料反应，以在第一区域内形成第一金属半导体膜，并且将第二金属 在第二区域内的半导体膜。 第一金属半导体膜具有第一厚度，第二金属半导体膜具有与第一厚度不同的第二厚度。

公开(公告)号：US07482217B1

公开(公告)日：2009-01-27

申请号：US11949637

申请日：2007-12-03

申请人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

发明人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

IPC分类号： H01L21/8238

CPC分类号： H01L27/11534 ,  H01L21/26506 ,  H01L21/823425 ,  H01L21/823462 ,  H01L21/823468 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11568 ,  H01L29/66507 ,  H01L29/78

摘要： A method of forming an electronic device is provided that includes selectively implanting ions into a workpiece, wherein ions are implanted into a first region of the workpiece that includes a semiconductor material, while substantially none of the ions are implanted into a second region of the workpiece that also includes a semiconductor material. The method further includes depositing a metal-containing film over the first region and the second region after selectively implanting, and then reacting the metal-containing film with the semiconductor material to form a first metal-semiconductor film within the first region and a second metal-semiconductor film within the second region. The first metal-semiconductor film has a first thickness and the second metal-semiconductor film has a second thickness that is different from the first thickness.

摘要翻译： 提供一种形成电子器件的方法，其包括选择性地将离子注入到工件中，其中将离子注入到包括半导体材料的工件的第一区域中，而基本上没有离子注入工件的第二区域 其还包括半导体材料。 该方法还包括在选择性地注入之后，在第一区域和第二区域上沉积含金属膜，然后使含金属膜与半导体材料反应，以在第一区域内形成第一金属半导体膜，并且将第二金属 在第二区域内的半导体膜。 第一金属半导体膜具有第一厚度，第二金属半导体膜具有与第一厚度不同的第二厚度。

公开(公告)号：US20070246202A1

公开(公告)日：2007-10-25

申请号：US11410694

申请日：2006-04-25

申请人： Wen Yu

发明人： Wen Yu

IPC分类号： F28D1/02

CPC分类号： F28F1/128 ,  B21D53/02 ,  F28F3/027

摘要： A louvered fin for a heat exchanger is disclosed, wherein the louvers include a rib formed thereon to maximize a strength and rigidity thereof and to minimize an amount of material required for production thereof.

摘要翻译： 公开了一种用于热交换器的百叶窗，其中百叶窗包括形成在其上的肋，以使其强度和刚性最大化并使其生产所需材料的量最小化。

公开(公告)号：US20070215334A1

公开(公告)日：2007-09-20

申请号：US11376880

申请日：2006-03-16

申请人： David Duong ,  Jonathan Raver ,  Wen Yu ,  James Kirchoff ,  Chris Vsetula

发明人： David Duong ,  Jonathan Raver ,  Wen Yu ,  James Kirchoff ,  Chris Vsetula

IPC分类号： F28F9/02

CPC分类号： F28F9/0224 ,  F28F9/002 ,  F28F9/0212 ,  Y10T29/49389

摘要： A heat exchanger is disclosed having a pair of tanks, the tanks including a center wall, a first sidewall, a second sidewall, a pair of baffles, and a cover, wherein the center wall, the first sidewall, and the second sidewall are integrally formed to minimize a complexity of manufacture and assembly.

摘要翻译： 公开了一种具有一对罐的热交换器，所述罐包括中心壁，第一侧壁，第二侧壁，一对挡板和盖，其中中心壁，第一侧壁和第二侧壁是一体的 形成以最小化制造和组装的复杂性。

公开(公告)号：US08039391B1

公开(公告)日：2011-10-18

申请号：US11388976

申请日：2006-03-27

申请人： Jinsong Yin ,  Wen Yu ,  Connie Pin-Chin Wang ,  Paul Besser ,  Keizaburo Yoshie

发明人： Jinsong Yin ,  Wen Yu ,  Connie Pin-Chin Wang ,  Paul Besser ,  Keizaburo Yoshie

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/321 ,  H01L21/76856

摘要： A method of forming a contact in a semiconductor device provides a titanium contact layer in a contact hole and a MOCVD-TiN barrier metal layer on the titanium contact layer. Impurities are removed from the MOCVD-TiN barrier metal layer by a plasma treatment in a nitrogen-hydrogen plasma. The time period for plasma treating the titanium nitride layer is controlled so that penetration of nitrogen into the underlying titanium contact layer is substantially prevented, preserving the titanium contact layer for subsequently forming a titanium silicide at the bottom of the contact.

摘要翻译： 在半导体器件中形成接触的方法在接触孔中提供钛接触层和钛接触层上的MOCVD-TiN阻挡金属层。 在氮 - 氢等离子体中通过等离子体处理从MOCVD-TiN阻挡金属层除去杂质。 控制等离子体处理氮化钛层的时间段，以便基本上防止氮渗透到下面的钛接触层中，保留钛接触层以在接触的底部随后形成硅化钛。