公开(公告)号：US07880221B2

公开(公告)日：2011-02-01

申请号：US12340274

申请日：2008-12-19

申请人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

发明人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

IPC分类号： H01L29/792

CPC分类号： H01L27/11534 ,  H01L21/26506 ,  H01L21/823425 ,  H01L21/823462 ,  H01L21/823468 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11568 ,  H01L29/66507 ,  H01L29/78

摘要： A method of forming an electronic device is provided that includes selectively implanting ions into a workpiece, wherein ions are implanted into a first region of the workpiece that includes a semiconductor material, while substantially none of the ions are implanted into a second region of the workpiece that also includes a semiconductor material. The method further includes depositing a metal-containing film over the first region and the second region after selectively implanting, and then reacting the metal-containing film with the semiconductor material to form a first metal-semiconductor film within the first region and a second metal-semiconductor film within the second region. The first metal-semiconductor film has a first thickness and the second metal-semiconductor film has a second thickness that is different from the first thickness.

摘要翻译： 提供一种形成电子器件的方法，其包括选择性地将离子注入到工件中，其中将离子注入到包括半导体材料的工件的第一区域中，而基本上没有离子注入工件的第二区域 其还包括半导体材料。 该方法还包括在选择性地注入之后，在第一区域和第二区域上沉积含金属膜，然后使含金属膜与半导体材料反应，以在第一区域内形成第一金属半导体膜，并且将第二金属 在第二区域内的半导体膜。 第一金属半导体膜具有第一厚度，第二金属半导体膜具有与第一厚度不同的第二厚度。

公开(公告)号：US20090140325A1

公开(公告)日：2009-06-04

申请号：US12340274

申请日：2008-12-19

申请人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

发明人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

IPC分类号： H01L29/792

CPC分类号： H01L27/11534 ,  H01L21/26506 ,  H01L21/823425 ,  H01L21/823462 ,  H01L21/823468 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11568 ,  H01L29/66507 ,  H01L29/78

摘要： A method of forming an electronic device is provided that includes selectively implanting ions into a workpiece, wherein ions are implanted into a first region of the workpiece that includes a semiconductor material, while substantially none of the ions are implanted into a second region of the workpiece that also includes a semiconductor material. The method further includes depositing a metal-containing film over the first region and the second region after selectively implanting, and then reacting the metal-containing film with the semiconductor material to form a first metal-semiconductor film within the first region and a second metal-semiconductor film within the second region. The first metal-semiconductor film has a first thickness and the second metal-semiconductor film has a second thickness that is different from the first thickness.

摘要翻译： 提供一种形成电子器件的方法，其包括选择性地将离子注入到工件中，其中将离子注入到包括半导体材料的工件的第一区域中，而基本上没有离子注入工件的第二区域 其还包括半导体材料。 该方法还包括在选择性地注入之后，在第一区域和第二区域上沉积含金属膜，然后使含金属膜与半导体材料反应，以在第一区域内形成第一金属半导体膜，并且将第二金属 在第二区域内的半导体膜。 第一金属半导体膜具有第一厚度，第二金属半导体膜具有与第一厚度不同的第二厚度。

公开(公告)号：US07482217B1

公开(公告)日：2009-01-27

申请号：US11949637

申请日：2007-12-03

申请人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

发明人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

IPC分类号： H01L21/8238

CPC分类号： H01L27/11534 ,  H01L21/26506 ,  H01L21/823425 ,  H01L21/823462 ,  H01L21/823468 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11568 ,  H01L29/66507 ,  H01L29/78

摘要： A method of forming an electronic device is provided that includes selectively implanting ions into a workpiece, wherein ions are implanted into a first region of the workpiece that includes a semiconductor material, while substantially none of the ions are implanted into a second region of the workpiece that also includes a semiconductor material. The method further includes depositing a metal-containing film over the first region and the second region after selectively implanting, and then reacting the metal-containing film with the semiconductor material to form a first metal-semiconductor film within the first region and a second metal-semiconductor film within the second region. The first metal-semiconductor film has a first thickness and the second metal-semiconductor film has a second thickness that is different from the first thickness.

摘要翻译： 提供一种形成电子器件的方法，其包括选择性地将离子注入到工件中，其中将离子注入到包括半导体材料的工件的第一区域中，而基本上没有离子注入工件的第二区域 其还包括半导体材料。 该方法还包括在选择性地注入之后，在第一区域和第二区域上沉积含金属膜，然后使含金属膜与半导体材料反应，以在第一区域内形成第一金属半导体膜，并且将第二金属 在第二区域内的半导体膜。 第一金属半导体膜具有第一厚度，第二金属半导体膜具有与第一厚度不同的第二厚度。

公开(公告)号：US20100055907A1

公开(公告)日：2010-03-04

申请号：US12231369

申请日：2008-09-02

申请人： Eunha Kim ,  Minh-Van Ngo

发明人： Eunha Kim ,  Minh-Van Ngo

IPC分类号： H01L21/302

CPC分类号： H01L29/66659 ,  H01L21/2815 ,  H01L21/823418 ,  H01L21/823437 ,  H01L29/6653

摘要： In the present method of fabricating a semiconductor device, initially, a semiconductor substrate is provided. An oxide layer is provided on and in contact with the substrate, and a polysilicon layer is provided on and in contact with the oxide layer. A layer of photoresist is provided on the polysilicon layer, and the photoresist is patterned to provide a photoresist body, which is used as a mask to etch away polysilicon and oxide, forming a polysilicon element thereunder. The photoresist body is then removed. A nickel layer is provided on the resulting structure, and a reaction step is undertaken to provide that nickel diffuses into the exposed top and side portions of the polysilicon body, forming nickel silicide. After the reaction step, the remaining nickel is removed, and a chemical-mechanical polishing step is undertaken to remove nickel silicide so that a pair of nickel silicide bodies remain, separated by polysilicon. Using the nickel silicide bodies as masks, the polysilicon and oxide thereunder are etched away.

摘要翻译： 在本发明的制造半导体器件的方法中，首先提供半导体衬底。 氧化物层设置在衬底上并与衬底接触，并且多晶硅层设置在氧化物层上并与氧化物层接触。 在多晶硅层上提供一层光致抗蚀剂，并且将光致抗蚀剂图案化以提供光致抗蚀剂体，其用作掩模以去除多晶硅和氧化物，从而形成其下的多晶硅元件。 然后去除光致抗蚀剂体。 在所得结构上提供镍层，并且进行反应步骤以使镍扩散到多晶硅体的暴露的顶部和侧部，形成硅化镍。 在反应步骤之后，除去剩余的镍，并进行化学机械抛光步骤以除去硅化镍，使得一对硅化镍体保留，被多晶硅分离。 使用硅化镍体作为掩模，其后的多晶硅和氧化物被蚀刻掉。

公开(公告)号：US09236448B2

公开(公告)日：2016-01-12

申请号：US12231369

申请日：2008-09-02

申请人： Eunha Kim ,  Minh-Van Ngo

发明人： Eunha Kim ,  Minh-Van Ngo

IPC分类号： H01L21/302 ,  H01L29/66 ,  H01L21/28 ,  H01L21/8234

CPC分类号： H01L29/66659 ,  H01L21/2815 ,  H01L21/823418 ,  H01L21/823437 ,  H01L29/6653

摘要： In the present method of fabricating a semiconductor device, initially, a semiconductor substrate is provided. An oxide layer is provided on and in contact with the substrate, and a polysilicon layer is provided on and in contact with the oxide layer. A layer of photoresist is provided on the polysilicon layer, and the photoresist is patterned to provide a photoresist body, which is used as a mask to etch away polysilicon and oxide, forming a polysilicon element thereunder. The photoresist body is then removed. A nickel layer is provided on the resulting structure, and a reaction step is undertaken to provide that nickel diffuses into the exposed top and side portions of the polysilicon body, forming nickel silicide. After the reaction step, the remaining nickel is removed, and a chemical-mechanical polishing step is undertaken to remove nickel silicide so that a pair of nickel silicide bodies remain, separated by polysilicon. Using the nickel silicide bodies as masks, the polysilicon and oxide thereunder are etched away.

摘要翻译： 在本发明的制造半导体器件的方法中，首先提供半导体衬底。 氧化物层设置在衬底上并与衬底接触，并且多晶硅层设置在氧化物层上并与氧化物层接触。 在多晶硅层上提供一层光致抗蚀剂，并且将光致抗蚀剂图案化以提供光致抗蚀剂体，其用作掩模以去除多晶硅和氧化物，从而形成其下的多晶硅元件。 然后去除光致抗蚀剂体。 在所得结构上提供镍层，并且进行反应步骤以使镍扩散到多晶硅体的暴露的顶部和侧部，形成硅化镍。 在反应步骤之后，除去剩余的镍，并进行化学机械抛光步骤以除去硅化镍，使得一对硅化镍体保留，被多晶硅分离。 使用硅化镍体作为掩模，其后的多晶硅和氧化物被蚀刻掉。

公开(公告)号：US09240418B2

公开(公告)日：2016-01-19

申请号：US12961379

申请日：2010-12-06

申请人： Shenqing Fang ,  Jihwan Choi ,  Connie Wang ,  Eunha Kim

发明人： Shenqing Fang ,  Jihwan Choi ,  Connie Wang ,  Eunha Kim

IPC分类号： H01L21/00 ,  H01L27/115 ,  G11C5/06 ,  H01L27/105 ,  H01L29/66 ,  H01L21/8234

CPC分类号： H01L27/11573 ,  G11C5/063 ,  H01L21/823468 ,  H01L27/1052 ,  H01L27/11526 ,  H01L27/11531 ,  H01L29/665 ,  H01L29/66507

摘要： Methods and structures for reducing resistance in wordlines of an integrated circuit memory device are disclosed. In one embodiment, the method includes forming multiple columns of polycrystalline silicon for respective number of wordlines, forming core transistor junctions and periphery transistor junctions associated with the wordlines, performing a salicidation process for the periphery transistor junction and performing a salicidation process for the columns of polycrystalline silicon to from the wordlines with low resistance.

摘要翻译： 公开了用于降低集成电路存储器件的字线中的电阻的方法和结构。 在一个实施例中，该方法包括在相应数量的字线上形成多列多晶硅，形成与字线相关联的核心晶体管结和外围晶体管结，对外围晶体管结执行盐化处理，并对 多晶硅从字线低电阻。

公开(公告)号：US07783337B2

公开(公告)日：2010-08-24

申请号：US11446683

申请日：2006-06-05

申请人： Marc D. Feldman ,  Thomas E. Milner ,  Jung Hwan Oh ,  Eunha Kim ,  Karthik Kumar ,  Chris Condit ,  Robert Grant ,  Nate Kemp ,  Jeehyun Kim ,  Shaochen Chen ,  Li-Hsin Han

发明人： Marc D. Feldman ,  Thomas E. Milner ,  Jung Hwan Oh ,  Eunha Kim ,  Karthik Kumar ,  Chris Condit ,  Robert Grant ,  Nate Kemp ,  Jeehyun Kim ,  Shaochen Chen ,  Li-Hsin Han

IPC分类号： A61B5/05

CPC分类号： A61B5/0073 ,  A61B1/00096 ,  A61B1/00167 ,  A61B1/00172 ,  A61B5/0066 ,  A61B5/0084 ,  A61B5/6852

摘要： An apparatus is disclosed for studying an object based on at least one of polarization, space, position or angle of light that has reflected from the object. An optical tomographic instrumentation of the apparatus includes a light source coupled to a source path, a sample path, a reference path, and a detection path, wherein the light source generates a spectrally resolved bandwidth. The spectrally resolved bandwidth includes a plurality of spectrally resolved cells and a detector in the detection path for analyzing light reflected from an object in the sample path and the light reflected in the reference path based upon at least one of the polarization, spatial relationship, position or angle domains.

摘要翻译： 公开了一种用于基于从物体反射的光的偏振，空间，位置或角度中的至少一个来研究物体的装置。 该设备的光学断层摄影仪器包括耦合到源路径的光源，采样路径，参考路径和检测路径，其中光源产生频谱分辨的带宽。 光谱解析的带宽包括多个光谱分辨的单元和检测路径中的检测器，用于分析从采样路径中的物体反射的光和基准路径中反射的光，基于偏振，空间关系，位置 或角域。

公开(公告)号：US08540627B2

公开(公告)日：2013-09-24

申请号：US12832001

申请日：2010-07-07

申请人： Marc D. Feldman ,  Thomas E. Milner ,  Jung Hwan Oh ,  Eunha Kim ,  Karthik Kumar ,  Chris Condit ,  Robert Grant ,  Nate Kemp ,  Jeehyun Kim ,  Shaochen Chen ,  Li-Hsin Han

发明人： Marc D. Feldman ,  Thomas E. Milner ,  Jung Hwan Oh ,  Eunha Kim ,  Karthik Kumar ,  Chris Condit ,  Robert Grant ,  Nate Kemp ,  Jeehyun Kim ,  Shaochen Chen ,  Li-Hsin Han

IPC分类号： A61B1/00 ,  A61B1/07

CPC分类号： A61B5/0073 ,  A61B1/00096 ,  A61B1/00167 ,  A61B1/00172 ,  A61B5/0066 ,  A61B5/0084 ,  A61B5/6852

摘要： The embodiments disclosed herein is related to a system for optical coherence tomographic imaging of turbid (i.e., scattering) materials utilizing multiple channels of information. The multiple channels of information may be comprised and encompass spatial, angle, spectral and polarization domains. More specifically, the embodiments disclosed herein is related to methods and apparatus for utilizing optical sources, systems or receivers capable of providing (source), processing (system) or recording (receiver) a multiplicity of channels of spectral information for optical coherence tomographic imaging of turbid materials. In these methods and apparatus the multiplicity of channels of spectral information that can be provided by the source, processed by the system, or recorded by the receiver are used to convey simultaneously spatial, spectral or polarimetric information relating to the turbid material being imaged tomographically. The multichannel optical coherence tomographic methods can be incorporated into an endoscopic probe for imaging a patient. The endoscope comprises an optical fiber array and can comprise a plurality of optical fibers adapted to be disposed in the patient. The optical fiber array transmits the light from the light source into the patient, and transmits the light reflected by the patient out of the patient. The plurality of optical fibers in the array is in optical communication with the light source. The multichannel optical coherence tomography system comprises a detector for receiving the light from the array and analyzing the light. The methods and apparatus may be applied for imaging a vessel, biliary, GU and/or GI tract of a patient.

摘要翻译： 本文公开的实施例涉及利用多个信道信道的浑浊（即散射）材料的光学相干断层成像系统。 可以包括多个信道信道并且包括空间，角度，频谱和极化域。 更具体地说，这里公开的实施例涉及用于利用光源，系统或接收器的方法和装置，该光源，系统或接收器能够提供（源），处理（系统）或记录（接收）多个光谱信息通道，用于光学相干断层成像 浑浊的材料。 在这些方法和装置中，可以由源提供的，由系统处理或由接收机记录的光谱信息的多个信道的多样性被用于同时传送与被层析成像的浑浊材料有关的空间，光谱或偏振信息。 多通道光学相干断层摄影方法可以并入用于成像患者的内窥镜探针中。 内窥镜包括光纤阵列，并且可以包括适于设置在患者体内的多根光纤。 光纤阵列将来自光源的光透射到患者体内，并将患者反射的光透射出患者。 阵列中的多个光纤与光源光学通信。 多通道光学相干断层摄影系统包括用于从阵列接收光并分析光的检测器。 该方法和装置可以应用于对患者的血管，胆管，GU和/或胃肠道进行成像。

公开(公告)号：US08125648B2

公开(公告)日：2012-02-28

申请号：US12131825

申请日：2008-06-02

申请人： Thomas E. Milner ,  Nathaniel J. Kemp ,  Eunha Kim

发明人： Thomas E. Milner ,  Nathaniel J. Kemp ,  Eunha Kim

IPC分类号： G01B9/02

CPC分类号： G01B9/02091 ,  A61B1/00096 ,  A61B1/00167 ,  A61B1/00172 ,  A61B5/0066 ,  A61B5/0075 ,  A61B5/0084 ,  A61B5/0086 ,  A61B5/4523 ,  A61B5/6852 ,  A61B5/7257 ,  G01B9/02004 ,  G01B9/02069 ,  G01B9/02097 ,  G01B2290/70

摘要： A polarization sensitive spectral interferometer apparatus and method for analyzing a sample. The polarization sensitive spectral interferometer apparatus and method determines polarization properties of the sample.

摘要翻译： 一种用于分析样品的偏振敏感光谱干涉仪装置和方法。 偏振敏感光谱干涉仪装置和方法确定样品的偏振特性。

公开(公告)号：US07998846B2

公开(公告)日：2011-08-16

申请号：US12209478

申请日：2008-09-12

申请人： Eunha Kim ,  Jeremy Wahl ,  Shenqing Fang ,  YouSeok Suh ,  Kuo-Tung Chang ,  Yi Ma ,  Rinji Sugino ,  Jean Yang

发明人： Eunha Kim ,  Jeremy Wahl ,  Shenqing Fang ,  YouSeok Suh ,  Kuo-Tung Chang ,  Yi Ma ,  Rinji Sugino ,  Jean Yang

IPC分类号： H01L21/263

CPC分类号： H01L21/02675 ,  H01L21/02592 ,  H01L21/02691

摘要： A semiconductor fabrication system and method are presented. A three dimensional multilayer integrated circuit fabrication method can include forming a first device layer and forming a second device layer on top of the first device layer with minimal detrimental heat transfer to the first layer by utilizing a controlled laser layer formation annealing process. A controlled laser crystallization process can be utilized and the controlled laser can include creating an amorphous layer; defining a crystallization area in the amorphous layer, where in the crystallization area is defined to promote single crystal growth (i.e. prevent multi-crystalline growth); and applying laser to the crystallization area, wherein the laser is applied in a manner that prevents undesired heat transfer to another layer.

摘要翻译： 提出了半导体制造系统和方法。 三维多层集成电路制造方法可以包括通过利用受控激光层形成退火工艺形成第一器件层并在第一器件层顶部形成第二器件层，并以最小的有害热传递到第一层。 可以利用受控激光结晶过程，并且受控激光器可以包括产生非晶层; 限定非晶层中的结晶区域，其中结晶区域被限定为促进单晶生长（即防止多晶生长）; 以及将激光施加到结晶区域，其中以防止不希望的热传递到另一层的方式施加激光。