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    Photothermal conversion material
    1.
    发明授权
    Photothermal conversion material 失效
    光热转换材料

    公开(公告)号：US06066729A

    公开(公告)日：2000-05-23

    申请号：US193240

    申请日：1998-11-17

    申请人： Shigeo Fujita ,  Jun-ichi Taniguchi ,  Hiroshi Terao ,  Yojiro Kumagae

    发明人： Shigeo Fujita ,  Jun-ichi Taniguchi ,  Hiroshi Terao ,  Yojiro Kumagae

    IPC分类号： B41C1/10 ,  B41M5/24 ,  B41M5/46 ,  C09B69/10 ,  C09B47/04 ,  F21V9/04

    CPC分类号： C09B69/108 ,  B41C1/1033 ,  B41M5/465

    摘要： A photothermal conversion material showing high sensitivity to the light of a semiconductor laser having an emission frequency band of 750 nm.about.900 nm with a high photothermal conversion efficiency and a planographic original plate fabricated by using the transducer are provided. This photothermal conversion material comprises a phthalocyanine compound of the following general formula (I) ##STR1## wherein R.sub.1 .about.R.sub.8 each represents alkyl or alkoxyalkyl; X.sub.1 .about.X.sub.8 each represents sulfur or NR.sub.9, where R.sub.9 is hydrogen or alkyl.

    摘要翻译： 提供了对具有高光热转换效率的750nm DIFFERENCE 900nm的发射频带和使用该换能器制造的平版原版的半导体激光器的光的高灵敏度的光热转换材料。 该光热转换材料包含以下通式（I）的酞菁化合物，其中R1分别表示烷基或烷氧基烷基; X1差异X8各自表示硫或NR 9，其中R 9为氢或烷基。

    Phthalocyanine compounds, process for producing the same, and near infrared absorbent comprising the same
    2.
    发明授权
    Phthalocyanine compounds, process for producing the same, and near infrared absorbent comprising the same 失效
    酞菁化合物，其制造方法和包含该酞菁化合物的近红外吸收剂

    公开(公告)号：US06468713B1

    公开(公告)日：2002-10-22

    申请号：US09673029

    申请日：2000-10-10

    申请人： Hiroshi Terao ,  Shigeo Fujita ,  Yojiro Kumagae

    发明人： Hiroshi Terao ,  Shigeo Fujita ,  Yojiro Kumagae

    IPC分类号： G03F7038

    CPC分类号： C07D487/22 ,  C09B47/00 ,  C09B47/063 ,  C09B47/064 ,  C09B47/08 ,  C09B47/18 ,  C09B47/20 ,  C09B47/22 ,  C09K3/00

    摘要： The invention relates to a novel phthalocyanine compound which absorbs in a near-infrared region of 700˜1000 nm with little absorption in the visible region of the spectrum and can be applied with advantage to a near-infrared light-absorbing filter for plasma display, a secret ink and other applications and to a process for producing the phthalocyanine compound. The above phthalocyanine compound has the following general formula (I). A near-infrared light-absorbing material containing the same is also provided. wherein R1˜R8 represents alkyl or alkoxyalkyl; X1˜X8 represents sulfur or >NR9; X1=(either X3 or X4)=(either X5 or X6)=(either X7 or X8)=sulfur and X2=(the other one of X3 and X4)=(the other one of X5 and X6)=(the other one of X7 and X8)=>NR9; R9 represents an acyl group which may optionally be substituted or an aroyl group which may optionally be substituted; M represents a couple of hydrogen atoms, a divalent metal, a trivalent metal derivative or a tetravalent metal derivative).

    摘要翻译： 本发明涉及一种新颖的酞菁化合物，其在700〜1000nm的近红外区域吸收，在光谱的可见光区域吸收少，可用于等离子显示器的近红外光吸收滤光片， 秘密油墨和其它用途以及制备酞菁化合物的方法。上述酞菁化合物具有以下通式（I）。 还提供了含有它的近红外光吸收材料。其中R1〜R8代表烷基或烷氧基烷基; X1〜X8表示硫或> NR9; X1 =（X3或X4）=（X5或X6）=（X7或X8）=硫，X2 =（X3和X4中的另一个）=（X5和X6中的另一个）=（另一个 X7和X8之一）=> NR9; R9表示可任选被取代的酰基或可任选被取代的芳酰基; M表示氢原子，二价金属，三价金属衍生物或四价金属衍生物）。

    Nonsolvate-Form Crystal of Polymethine Compound, Process for Producing the Same and Use Thereof
    6.
    发明申请
    Nonsolvate-Form Crystal of Polymethine Compound, Process for Producing the Same and Use Thereof 审中-公开
    聚异氰酸酯化合物的非特异性形式的水晶，其生产方法和用途

    公开(公告)号：US20080091033A1

    公开(公告)日：2008-04-17

    申请号：US11793352

    申请日：2005-12-09

    申请人： Shigeo Fujita ,  Keiki Chichiishi ,  Sayuri Wada ,  Tsunehito Eda ,  Hiroshi Terao

    发明人： Shigeo Fujita ,  Keiki Chichiishi ,  Sayuri Wada ,  Tsunehito Eda ,  Hiroshi Terao

    IPC分类号： C07D403/08

    CPC分类号： C09B67/0025 ,  C07D209/10 ,  C07D209/34 ,  C09B23/0066 ,  C09B23/086

    摘要： The object is to provide a novel nonsolvate-form crystal of polymethine compound which has good stability in solution, shows a high gram extinction coefficient, is excellent in storage stability, is easy to handle and is highly sensitive to general-purpose semiconductor lasers. Thus are provided a nonsolvate-form crystal of a polymethine compound of the formula (I) and a process for producing the nonsolvate-form crystal of polymethine compound of formula (I) which comprises reacting a polymethine ether compound of the formula (II) given below with p-toluenesulfonic acid. (In the above formula, TsO represents the p-toluenesulfonic acid residue.) (In the above formula, R represents an alkyl group, an alkoxyalkyl group or an optionally substituted aryl group.)

    摘要翻译： 本发明的目的是提供一种在溶液中具有良好稳定性的聚异氰酸酯化合物的新型非特异性结晶形式，显示出高消光系数，储存稳定性优异，易于处理，对通用半导体激光器高度敏感。 提供了式（I）的聚甲炔化合物的非皂体形式的结晶和用于制备式（I）的聚甲炔化合物的非皂体型晶体的方法，其包括使给定的式（II）的聚甲炔醚化合物 在下面用对甲苯磺酸。 （在上式中，TsO表示对甲苯磺酸残基。）（上式中，R表示烷基，烷氧基烷基或任意取代的芳基。）

    Copolymer, production process thereof, lubricating oil viscosity modifier, and lubricating oil composition
    8.
    发明申请
    Copolymer, production process thereof, lubricating oil viscosity modifier, and lubricating oil composition 有权
    共聚物，其制备方法，润滑油粘度调节剂和润滑油组合物

    公开(公告)号：US20090209721A1

    公开(公告)日：2009-08-20

    申请号：US12379143

    申请日：2009-02-13

    申请人： Satoshi Ikeda ,  Akihiro Matsuda ,  Yoshiki Shimokawatoko ,  Junichi Mohri ,  Toshiyuki Shimazaki ,  Hiroshi Terao ,  Koji Takeda

    发明人： Satoshi Ikeda ,  Akihiro Matsuda ,  Yoshiki Shimokawatoko ,  Junichi Mohri ,  Toshiyuki Shimazaki ,  Hiroshi Terao ,  Koji Takeda

    IPC分类号： C08F210/14 ,  C08F210/06 ,  C08F210/08

    CPC分类号： C10M143/08 ,  C08F4/65912 ,  C08F4/65927 ,  C08F210/16 ,  C10M143/00 ,  C10M2203/1006 ,  C10M2205/022 ,  C10N2220/022 ,  C10N2230/02 ,  C08F4/65904 ,  C08F210/06 ,  C08F2500/20 ,  C08F2500/03 ,  C08F2500/17 ,  C08F2500/08 ,  C10M2205/028

    摘要： Copolymers when used as lubricating oil viscosity modifiers enable lubricating oils to show excellent low-temperature properties. Processes for producing the copolymers are disclosed. Lubricating oil viscosity modifiers and lubricating oil compositions contain the copolymers.A copolymer includes structural units derived from ethylene and structural units derived from a C3-20 α-olefin and satisfies the following requirements (1) to (8): (1) the melting point (Tm) according to DSC is in the range of 0 to 60° C.; (2) the melting point (Tm) and the density D (g/cm3) satisfy the equation: Tm≧1073×D−893; (3) Mw/Mn according to GPC is from 1.6 to 5.0; (4) the half-value width (ΔThalf) of a melting peak measured by DSC is not more than 90° C.; (5) the half-value width (ΔThalf) and the melting point (Tm) satisfy the equation: ΔThalf≦−0.71×Tm+101.4; (6) the heat of fusion (ΔH) as measured by DSC is not more than 60 J/g; (7) the crystallization temperature (Tc) measured by DSC is not more than 70° C.; (8) the heat of fusion (ΔH), the crystallization temperature (Tc), each measured by DSC and the crystallization temperature measured by a CRYSTAF method (Tcrystaf) satisfy the equation: Tc−Tcrystaf≧0.028×ΔH+25.3.

    摘要翻译： 当用作润滑油粘度调节剂时，共聚物使润滑油显示出优异的低温性能。 公开了制备共聚物的方法。 润滑油粘度调节剂和润滑油组合物含有共聚物。 共聚物包括衍生自乙烯的结构单元和衍生自C3-20α-烯烃的结构单元，并且满足以下要求（1）至（8）：（1）根据DSC的熔点（Tm）在 0〜60℃。 （2）熔点（Tm）和密度D（g / cm 3）满足下式：Tm> = 1073×D-893; （3）根据GPC的Mw / Mn为1.6〜5.0; （4）通过DSC测定的熔融峰的半值宽度（DeltaThalf）不大于90℃。 （5）半值宽度（DeltaThalf）和熔点（Tm）满足以下等式：DeltaThalf <= -0.71xTm + 101.4; （6）通过DSC测定的熔解热（DeltaH）不大于60J / g; （7）通过DSC测定的结晶温度（Tc）为70℃以下。 （8）通过DSC测定的各自测量的结晶温度（Tc），通过CRYSTAF法（Tcrystaf）测定的结晶温度满足下列公式：<？in-line-formula description =“In- 线公式“end =”lead“？> Tc-Tcrystaf> = 0.028xDeltaH + 25.3。<？in-line-formula description =”In-line Formulas“end =”tail“？>

    Resistance temperature detector
    9.
    发明授权
    Resistance temperature detector 失效
    电阻温度检测器

    公开(公告)号：US4929092A

    公开(公告)日：1990-05-29

    申请号：US198495

    申请日：1988-05-25

    申请人： Seizo Taguchi ,  Toshiharu Oketani ,  Michihiro Ohashi ,  Hideaki Tanaka ,  Hiroshi Terao

    发明人： Seizo Taguchi ,  Toshiharu Oketani ,  Michihiro Ohashi ,  Hideaki Tanaka ,  Hiroshi Terao

    IPC分类号： G01K1/18 ,  G01K7/22 ,  G01K13/02

    CPC分类号： G01K1/18 ,  G01K13/02 ,  G01K7/22

    摘要： A resistance temperature detector measures the temperature of fluid flowing through a pipe at a given point in the pipe. In the temperature detector, normal and backup temperature sensing resistance elements are secured with inorganic adhesive onto an inner wall surface of a thin-walled tubular sheath having its tip end closed. These temperature sensing resistance elements are disposed in spaced parallel relationship and are respectively connected to insulated lead wires separately disposed within the resistance temperature detector. The resistance temperature detector also includes a sheath cable assembly having sheathed cables, each of which is electrically connected to a respective one of the insulated lead wires and secured to the other end of the tubular sheath. Thereby a sealed vacant space is defined within the temperature sensing assembly. The detector also includes preferred structure for the temperature sensing resistance element and preferable well structures to house the proposed resistance temperature detector.

    Manufacturing method of semiconductor device
    10.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07094701B2

    公开(公告)日：2006-08-22

    申请号：US11182024

    申请日：2005-07-15

    申请人： Mitsuo Umemoto ,  Masataka Hoshino ,  Hiroshi Terao

    发明人： Mitsuo Umemoto ,  Masataka Hoshino ,  Hiroshi Terao

    IPC分类号： H10L22/302

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/02372 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/014

    摘要： A manufacturing method of a semiconductor device having a through-hole electrode is offered to improve reliability and yield of the semiconductor device. A via hole penetrating through a semiconductor substrate is formed at a location corresponding to a pad electrode. An insulation film is formed on a back surface of the semiconductor substrate and a surface of the via hole. A reinforcing insulation film having an overhung portion at a rim of the via hole is formed on the back surface of the semiconductor substrate. The insulation film on a bottom of the via hole is removed by etching using the reinforcing insulation film as a mask, while the insulation film on a side wall of the via hole remains. The through-hole electrode, a wiring layer and a conductive terminal are formed on the back surface of the semiconductor substrate and the via hole. Finally, the semiconductor substrate is divided into a plurality of semiconductor dice by dicing.

    摘要翻译： 提供具有通孔电极的半导体器件的制造方法，以提高半导体器件的可靠性和产量。 穿过半导体衬底的通孔形成在对应于焊盘电极的位置处。 绝缘膜形成在半导体衬底的背面和通孔的表面上。 在半导体基板的背面形成有在通孔的边缘处具有突出部的加强绝缘膜。 通过使用加强绝缘膜作为掩模的蚀刻来除去通孔底部的绝缘膜，同时保留通孔侧壁上的绝缘膜。 通孔电极，布线层和导电端子形成在半导体衬底的背面和通孔上。 最后，半导体衬底通过切割被分成多个半导体晶片。