摘要:
Light from a light source becomes two illumination beams by a beam splitter. The beams are irradiated onto a semiconductor wafer from two mutually substantially orthogonal azimuthal angles having substantially equal elevation angles to form illumination spots. When the sum of scattered, diffracted, and reflected lights due to the illumination beams is detected, influence of the anisotropy which a contaminant particle and a defect existing in the wafer itself or thereon have with respect to an illumination direction, can be eliminated.
摘要:
Light from a light source becomes two illumination beams by a beam splitter. The beams are irradiated onto a semiconductor wafer from two mutually substantially orthogonal azimuthal angles having substantially equal elevation angles to form illumination spots. When the sum of scattered, diffracted, and reflected lights due to the illumination beams is detected, influence of the anisotropy which a contaminant particle and a defect existing in the wafer itself or thereon have with respect to an illumination direction, can be eliminated.
摘要:
Light from a light source becomes two illumination beams by a beam splitter. The beams are irradiated onto a semiconductor wafer from two mutually substantially orthogonal azimuthal angles having substantially equal elevation angles to form illumination spots. When the sum of scattered, diffracted, and reflected lights due to the illumination beams is detected, influence of the anisotropy which a contaminant particle and a defect existing in the wafer itself or thereon have with respect to an illumination direction, can be eliminated.
摘要:
Light from a light source becomes two illumination beams by a beam splitter. The beams are irradiated onto a semiconductor wafer from two mutually substantially orthogonal azimuthal angles having substantially equal elevation angles to form illumination spots. When the sum of scattered, diffracted, and reflected lights due to the illumination beams is detected, influence of the anisotropy which a contaminant particle and a defect existing in the wafer itself or thereon have with respect to an illumination direction, can be eliminated.
摘要:
Light from a light source becomes two illumination beams by a beam splitter. The beams are irradiated onto a semiconductor wafer from two mutually substantially orthogonal azimuthal angles having substantially equal elevation angles to form illumination spots. When the sum of scattered, diffracted, and reflected lights due to the illumination beams is detected, influence of the anisotropy which a contaminant particle and a defect existing in the wafer itself or thereon have with respect to an illumination direction, can be eliminated.
摘要:
The invention is directed to detect a warp amount in a real-time manner in a wafer rotating at high speed under inspection. An inspection apparatus includes: a first light irradiating unit for irradiating an object to be inspected with light; a first detector for detecting scattered light from the object to be inspected; a second light irradiating unit for irradiating the object to be inspected with light; a second detector for detecting light reflected from the object to be inspected, of light of the second light irradiating unit; a stage for moving an object to be inspected, which moves the object to be inspected so as to change irradiation positions on the object to be inspected, of the light of the first light irradiating unit and the light of the second light irradiating unit; an inspection coordinate detector for outputting information of coordinates of a position irradiated with light; an elevation control circuit for outputting height information of the object to be inspected on the basis of a detection signal from the second detector; and a data processing unit for calculating a warp amount of the object to be inspected on the basis of the information of the position coordinates from the inspection coordinate detector and the height information from the elevation control circuit.
摘要:
A wafer surface inspection method and apparatus of high sensitivity, and free from performance degradation in terms of cleanliness, coordinate repeatability of foreign particles and the like. Gas for cooling is sprayed onto a laser irradiation position on the wafer surface to prevent an increase in temperature of the foreign particles and to suppress break-down of the foreign particles.
摘要:
The invention is directed to detect a warp amount in a real-time manner in a wafer rotating at high speed under inspection. An inspection apparatus includes: a first light irradiating unit for irradiating an object to be inspected with light; a first detector for detecting scattered light from the object to be inspected; a second light irradiating unit for irradiating the object to be inspected with light; a second detector for detecting light reflected from the object to be inspected, of light of the second light irradiating unit; a stage for moving an object to be inspected, which moves the object to be inspected so as to change irradiation positions on the object to be inspected, of the light of the first light irradiating unit and the light of the second light irradiating unit; an inspection coordinate detector for outputting information of coordinates of a position irradiated with light; an elevation control circuit for outputting height information of the object to be inspected on the basis of a detection signal from the second detector; and a data processing unit for calculating a warp amount of the object to be inspected on the basis of the information of the position coordinates from the inspection coordinate detector and the height information from the elevation control circuit.
摘要:
A laser beam oscillated from a laser source is folded in its path by first and second plane mirrors and enters a beam expander. The surface of each plane mirror is deteriorated with illumination by the laser beam and the reflectance is reduced. To avoid a light quantity of the laser beam entering the beam expander from being reduced below a reference value, when the laser beam is illuminated over a certain time, a position on each of the first and second plane mirrors at which the laser beam is illuminated is changed by a structure for rotating and/or translating a reflecting surface of each plane mirror on a plane, which includes the plane mirror, while an optical axis is kept same. Thus, the useful life of each plane mirror can be prolonged without displacing the optical axis.
摘要:
A wafer surface inspection method and apparatus of high sensitivity, and free from performance degradation in terms of cleanliness, coordinate repeatability of foreign particles and the like. Gas for cooling is sprayed onto a laser irradiation position on the wafer surface to prevent an increase in temperature of the foreign particles and to suppress break-down of the foreign particles.