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32 条记录 (耗时 0.03 秒)

    Method of manufacturing a surrounding gate type MOFSET
    1.
    发明授权
    Method of manufacturing a surrounding gate type MOFSET 失效
    制造周围栅极型MOSFET的方法

    公开(公告)号：US06373099B1

    公开(公告)日：2002-04-16

    申请号：US09252077

    申请日：1999-02-18

    申请人： Shin Kikuchi ,  Hayao Ohzu ,  Shunsuke Inoue ,  Yoshio Nakamura ,  Takeshi Ichikawa ,  Osamu Ikeda

    发明人： Shin Kikuchi ,  Hayao Ohzu ,  Shunsuke Inoue ,  Yoshio Nakamura ,  Takeshi Ichikawa ,  Osamu Ikeda

    IPC分类号： H01L31062

    CPC分类号： H01L27/115 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

    摘要翻译： 一种半导体器件，包括：绝缘栅型晶体管，其具有形成在半导体衬底的主侧上的柱状半导体区域，形成在柱状半导体区域的侧表面上的栅电极，同时插入栅极绝缘膜和分别形成的主电极区域 形成在柱状半导体区域的下方; 以及形成在上主电极区域上并且可以被电断开的存储元件。

    Photoelectric conversion device with reduced fixed pattern noises
    5.
    发明授权
    Photoelectric conversion device with reduced fixed pattern noises 失效
    具有降低固定模式噪声的光电转换装置

    公开(公告)号：US4810896A

    公开(公告)日：1989-03-07

    申请号：US73220

    申请日：1987-07-14

    申请人： Nobuyoshi Tanaka ,  Yoshio Nakamura ,  Shigetoshi Sugawa ,  Hayao Ohzu

    发明人： Nobuyoshi Tanaka ,  Yoshio Nakamura ,  Shigetoshi Sugawa ,  Hayao Ohzu

    IPC分类号： H01L27/146 ,  H04N1/028 ,  H04N5/335 ,  H04N5/353 ,  H04N5/365 ,  H04N5/369 ,  H04N5/374 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H04N3/1581 ,  H01L27/14681 ,  H04N3/1512

    摘要： A photoelectric conversion device includes a first main electrode region of a first conductivity type; a second main electrode region of a first conductivity type; a control electrode region of a second conductivity type opposite to the first conductivity type serving as an accumulation region for carriers induced by an electromagnetic wave; a first circuit for setting the control electrode region selectively at a constant potential and at a floating state; and a second circuit for setting the first main electrode region selectively at a low impedance state and at a floating state; whereby the first and second circuits control the carrier removal, accumulation and readout operations in accordance with the selection conditions by the first and second circuits.

    摘要翻译： 光电转换装置包括第一导电类型的第一主电极区域; 第一导电类型的第二主电极区域; 与由电磁波引起的载流子作为累积区域的与第一导电类型相反的第二导电类型的控制电极区域; 用于将控制电极区域选择性地设置在恒定电位并处于浮置状态的第一电路; 以及第二电路，用于将第一主电极区域选择性地设置在低阻抗状态和浮动状态; 由此第一和第二电路根据第一和第二电路的选择条件来控制载波移除，累积和读出操作。

    Semiconductor device with a particular source/drain and gate structure
    7.
    发明授权
    Semiconductor device with a particular source/drain and gate structure 失效
    具有特定源极/漏极和栅极结构的半导体器件

    公开(公告)号：US5378914A

    公开(公告)日：1995-01-03

    申请号：US997135

    申请日：1992-12-24

    申请人： Hayao Ohzu ,  Tetsunobu Kochi

    发明人： Hayao Ohzu ,  Tetsunobu Kochi

    IPC分类号： H01L21/285 ,  H01L21/28 ,  H01L21/336 ,  H01L21/74 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/41 ,  H01L29/78 ,  H01L27/085 ,  H01L27/088 ,  H01L29/60

    CPC分类号： H01L21/743 ,  H01L27/0928

    摘要： There is provided a semiconductor device with very small functional elements, which can be constructed by necessary minimum components without any unnecessary surface area, thus being capable of significantly reducing the layout area and adapted for achieving a fine geometry and a high level of integration. The semiconductor device is provided with a first semiconductor area of a first conductive type (for example a p.sup.- well) and a second semiconductor area formed on or under the first semiconductor area and having a second conductive type different from the first conductive type (for example a source or drain area), in which an electrode electrically connected to the first semiconductor area is formed through the second semiconductor area, and the first and second semiconductor areas are shortcircuited by the above-mentioned electrode.

    摘要翻译： 提供了具有非常小的功能元件的半导体器件，其可以由必要的最小部件构成而没有任何不必要的表面积，因此能够显着减少布局面积并且适于实现精细几何形状和高水平集成。 半导体器件设置有第一导电类型（例如p阱）的第一半导体区域和形成在第一半导体区域上或下面的具有不同于第一导电类型的第二导电类型的第二半导体区域（用于 例如源极或漏极区域），其中通过第二半导体区域形成与第一半导体区域电连接的电极，并且第一和第二半导体区域被上述电极短路。

    Color line sensor apparatus
    8.
    发明授权
    Color line sensor apparatus 失效
    彩色线传感器装置

    公开(公告)号：US4954703A

    公开(公告)日：1990-09-04

    申请号：US284607

    申请日：1988-12-15

    申请人： Hayao Ohzu

    发明人： Hayao Ohzu

    IPC分类号： H01L27/146 ,  H04N1/028 ,  H04N1/04 ,  H04N9/04

    CPC分类号： H04N3/1581 ,  H04N9/045

    摘要： A color line sensor apparatus has a plurality of color line sensors comprising a plurality of lines, and a selecting circuit which can select a desired one of a plurality of lines. The line selected by the selecting circuit is scanned on the basis of a scan pulse from a single scanning circuit.

    Solid state image pickup apparatus for reducing noise
    9.
    发明授权
    Solid state image pickup apparatus for reducing noise 失效
    用于降低噪声的固态图像拾取装置

    公开(公告)号：US5737016A

    公开(公告)日：1998-04-07

    申请号：US512017

    申请日：1995-08-07

    申请人： Hayao Ohzu ,  Toshiji Suzuki ,  Akira Ishizaki ,  Seiji Hashimoto ,  Tadanori Harada ,  Tsuneo Suzuki

    发明人： Hayao Ohzu ,  Toshiji Suzuki ,  Akira Ishizaki ,  Seiji Hashimoto ,  Tadanori Harada ,  Tsuneo Suzuki

    IPC分类号： H04N5/361 ,  H04N5/365 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/335

    CPC分类号： H04N5/378 ,  H04N5/359 ,  H04N5/361 ,  H04N5/365 ,  H04N5/374

    摘要： Solid state image pickup apparatus for removing noise includes a plurality of photoelectric transducer elements for converting incident light into electrical signals, each of the transducer elements having a signal fluctuation. Control circuitry is provided having a first mode for reading out from each transducer element a first signal corresponding to a signal component and a noise component caused by the fluctuation. The control circuitry has a second mode for reading out from each transducer element a second signal corresponding to the noise component caused by the fluctuation, the first and second signals being read out in the same manner from each transducer element. Amplification circuitry is provided for amplifying the first and second signals, the amplification circuitry including a plurality of amplifiers each amplifier being coupled to a respective one of the plurality of transducer elements. Processing circuitry is provided for processing the first and second signals from the plurality of transducer elements, said processing circuitry including a common capacitor having an input side selectably connected to receive the first signal and the second signal, the capacitor having an output side selectably connected to a fixed level and a floating level.

    摘要翻译： 用于去除噪声的固态图像拾取装置包括用于将入射光转换成电信号的多个光电换能器元件，每个换能器元件具有信号波动。 提供控制电路，其具有用于从每个换能器元件读出对应于由波动引起的信号分量和噪声分量的第一信号的第一模式。 控制电路具有从每个换能器元件读出对应于由波动引起的噪声分量的第二信号的第二模式，第一和第二信号以与每个换能器元件相同的方式读出。 提供放大电路用于放大第一和第二信号，放大电路包括多个放大器，每个放大器耦合到多个换能器元件中的相应一个。 提供处理电路用于处理来自多个换能器元件的第一和第二信号，所述处理电路包括公共电容器，该公共电容器具有可选择地连接以接收第一信号和第二信号的输入端，该电容器具有可选地连接到 固定水平和浮动水平。

    Solid state image pickup apparatus
    10.
    发明授权
    Solid state image pickup apparatus 失效

    公开(公告)号：US5331421A

    公开(公告)日：1994-07-19

    申请号：US547996

    申请日：1990-06-13

    申请人： Hayao Ohzu ,  Toshiji Suzuki ,  Akira Ishizaki

    发明人： Hayao Ohzu ,  Toshiji Suzuki ,  Akira Ishizaki

    IPC分类号： H04N5/357 ,  H04N5/359 ,  H04N5/361 ,  H04N5/365 ,  H04N5/369 ,  H04N3/14 ,  H04N5/335

    CPC分类号： H04N5/361 ,  H04N5/357 ,  H04N5/3575 ,  H04N5/365 ,  H04N5/3742

    摘要： A solid state image pickup device includes light-receiving circuitry having a plurality of light-receiving cells arranged in a matrix. Apparatus is provided for reading and storing electrical signals output by the light-receiving circuitry, and includes (1) a first memory for reading bright signals out of the light-receiving cells arranged in a row for storing the bright signals for a horizontal scanning period, (2) a second memory for reading dark signals out of the light-receiving cells arranged in the row for storing the dark signal for the horizontal scanning period, and (3) a readout circuit for reading the bright and dark signals stored in the first and second memories simultaneously. A removing circuit is provided for removing fixed pattern noise by simultaneously processing the bright and dark current signals read out from the first and second memories. Preferably, this removing circuit comprises a differential amplifier. Also, the light receiving cells and the reading and storing apparatus are preferably provided on a single semiconductor substrate.