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127 条记录 (耗时 0.037 秒)

    Method of manufacturing a surrounding gate type MOFSET
    1.
    发明授权
    Method of manufacturing a surrounding gate type MOFSET 失效
    制造周围栅极型MOSFET的方法

    公开(公告)号：US06373099B1

    公开(公告)日：2002-04-16

    申请号：US09252077

    申请日：1999-02-18

    申请人： Shin Kikuchi ,  Hayao Ohzu ,  Shunsuke Inoue ,  Yoshio Nakamura ,  Takeshi Ichikawa ,  Osamu Ikeda

    发明人： Shin Kikuchi ,  Hayao Ohzu ,  Shunsuke Inoue ,  Yoshio Nakamura ,  Takeshi Ichikawa ,  Osamu Ikeda

    IPC分类号： H01L31062

    CPC分类号： H01L27/115 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

    摘要翻译： 一种半导体器件，包括：绝缘栅型晶体管，其具有形成在半导体衬底的主侧上的柱状半导体区域，形成在柱状半导体区域的侧表面上的栅电极，同时插入栅极绝缘膜和分别形成的主电极区域 形成在柱状半导体区域的下方; 以及形成在上主电极区域上并且可以被电断开的存储元件。

    Photoelectric conversion device with reduced fixed pattern noises
    6.
    发明授权
    Photoelectric conversion device with reduced fixed pattern noises 失效
    具有降低固定模式噪声的光电转换装置

    公开(公告)号：US4810896A

    公开(公告)日：1989-03-07

    申请号：US73220

    申请日：1987-07-14

    申请人： Nobuyoshi Tanaka ,  Yoshio Nakamura ,  Shigetoshi Sugawa ,  Hayao Ohzu

    发明人： Nobuyoshi Tanaka ,  Yoshio Nakamura ,  Shigetoshi Sugawa ,  Hayao Ohzu

    IPC分类号： H01L27/146 ,  H04N1/028 ,  H04N5/335 ,  H04N5/353 ,  H04N5/365 ,  H04N5/369 ,  H04N5/374 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H04N3/1581 ,  H01L27/14681 ,  H04N3/1512

    摘要： A photoelectric conversion device includes a first main electrode region of a first conductivity type; a second main electrode region of a first conductivity type; a control electrode region of a second conductivity type opposite to the first conductivity type serving as an accumulation region for carriers induced by an electromagnetic wave; a first circuit for setting the control electrode region selectively at a constant potential and at a floating state; and a second circuit for setting the first main electrode region selectively at a low impedance state and at a floating state; whereby the first and second circuits control the carrier removal, accumulation and readout operations in accordance with the selection conditions by the first and second circuits.

    摘要翻译： 光电转换装置包括第一导电类型的第一主电极区域; 第一导电类型的第二主电极区域; 与由电磁波引起的载流子作为累积区域的与第一导电类型相反的第二导电类型的控制电极区域; 用于将控制电极区域选择性地设置在恒定电位并处于浮置状态的第一电路; 以及第二电路，用于将第一主电极区域选择性地设置在低阻抗状态和浮动状态; 由此第一和第二电路根据第一和第二电路的选择条件来控制载波移除，累积和读出操作。

    Process for producing electrode for semiconductor element and semiconductor device having the electrode
    9.
    发明授权
    Process for producing electrode for semiconductor element and semiconductor device having the electrode 失效
    用于制造半导体元件的电极的工艺和具有该电极的半导体器件

    公开(公告)号：US06218223B1

    公开(公告)日：2001-04-17

    申请号：US08258370

    申请日：1994-06-10

    申请人： Osamu Ikeda ,  Yoshio Nakamura

    发明人： Osamu Ikeda ,  Yoshio Nakamura

    IPC分类号： H01L21336

    CPC分类号： H01L29/456 ,  H01L21/28512 ,  H01L21/76879 ,  H01L23/485 ,  H01L29/41 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A process is provided for fabricating a structure wherein the longitudinal direction of a base electrode and the longitudinal direction of an emitter electrode are the same. This structure is special and provides the advantage that, even if the element is microminiaturized, improved driving performance can be obtained. In another aspect, the longitudinal direction of the gate electrode is the same as the longitudinal direction of the source-drain electrodes. Thereby, miniaturization in the gate-width direction can be achieved together with an improvement in the driving performance.

    摘要翻译： 提供了一种用于制造其中基极的纵向方向和发射电极的纵向方向相同的结构的方法。 这种结构是特殊的，并且具有以下优点：即使该元件是微型化的，也可获得改进的驱动性能。 另一方面，栅电极的纵向方向与源漏电极的长度方向相同。 由此，可以在驱动性能的提高的同时，实现栅宽方向的小型化。

    Semiconductor device with Shottky junction
    10.
    发明授权
    Semiconductor device with Shottky junction 失效
    具肖特基结的半导体器件

    公开(公告)号：US5438218A

    公开(公告)日：1995-08-01

    申请号：US54831

    申请日：1993-04-30

    申请人： Yoshio Nakamura ,  Shin Kikuchi ,  Shigeru Nishimura

    发明人： Yoshio Nakamura ,  Shin Kikuchi ,  Shigeru Nishimura

    IPC分类号： H01L21/285 ,  H01L21/329 ,  H01L29/47 ,  H01L29/78 ,  H01L29/872

    CPC分类号： H01L29/66166 ,  H01L21/28537 ,  H01L29/47 ,  H01L29/7308 ,  H01L29/7839 ,  H01L29/872

    摘要： A semiconductor device is provided having a first semiconductor region comprising an n-type semiconductor and a second semiconductor region of an n-type semiconductor having a higher resistivity than the first semiconductor region. An insulation film is provided adjacent to the semiconductor region having an aperture therein, and an electrode region is provided in the aperture. A third semiconductor region comprising a p-type semiconductor is provided at a junction between the insulation film and the electrode region. The electrode comprises a monocrystalline metal and constitutes a Schottky junction with the semiconductor region. An ohmic electrode comprising aluminum is arranged on the electrode region.

    摘要翻译： 提供一种半导体器件，其具有包括n型半导体的第一半导体区域和具有比第一半导体区域更高的电阻率的n型半导体的第二半导体区域。 在其中具有孔的半导体区域附近提供绝缘膜，并且在孔中设置电极区域。 包括p型半导体的第三半导体区域设置在绝缘膜和电极区域之间的接合处。 电极包括单晶金属，并与半导体区域构成肖特基结。 包括铝的欧姆电极布置在电极区域上。