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公开(公告)号：US20080099783A1
公开(公告)日：2008-05-01
申请号：US11976963
申请日：2007-10-30
CPC分类号： H01L23/49562 , H01L23/4952 , H01L23/585 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05073 , H01L2224/05093 , H01L2224/05094 , H01L2224/05096 , H01L2224/05553 , H01L2224/05624 , H01L2224/05647 , H01L2224/13023 , H01L2224/13099 , H01L2224/16 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/49111 , H01L2224/49113 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/20753 , H01L2924/20754 , H01L2924/00014 , H01L2924/20752 , H01L2924/00
摘要： A semiconductor integrated circuit includes a power transistor formed on a semiconductor substrate, a plurality of first metal patterns and a plurality of second metal patterns which are formed right above the power transistor and function as a first electrode and as a second electrode of the power transistor, respectively, a plurality of first buses each electrically connected with, of a plurality of first metal patterns, a corresponding first metal pattern, a plurality of second buses each electrically connected with, of a plurality of second metal patterns, a corresponding second metal pattern, wherein one contact pad is provided to each of a plurality of first buses and a plurality of second buses.
摘要翻译： 半导体集成电路包括形成在半导体衬底上的功率晶体管，多个第一金属图案和多个第二金属图案，其形成在功率晶体管的正上方并用作第一电极和作为功率晶体管的第二电极 分别与多个第一金属图形电连接的多个第一总线，相应的第一金属图案，与多个第二金属图案电连接的多个第二总线，相应的第二金属图案 其中，一个接触垫被提供给多个第一总线和多个第二总线中的每一个。
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公开(公告)号：US07667316B2
公开(公告)日：2010-02-23
申请号：US11976963
申请日：2007-10-30
CPC分类号： H01L23/49562 , H01L23/4952 , H01L23/585 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05073 , H01L2224/05093 , H01L2224/05094 , H01L2224/05096 , H01L2224/05553 , H01L2224/05624 , H01L2224/05647 , H01L2224/13023 , H01L2224/13099 , H01L2224/16 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/49111 , H01L2224/49113 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/20753 , H01L2924/20754 , H01L2924/00014 , H01L2924/20752 , H01L2924/00
摘要： A semiconductor integrated circuit includes a power transistor formed on a semiconductor substrate, a plurality of first metal patterns and a plurality of second metal patterns which are formed right above the power transistor and function as a first electrode and as a second electrode of the power transistor, respectively, a plurality of first buses each electrically connected with, of a plurality of first metal patterns, a corresponding first metal pattern, a plurality of second buses each electrically connected with, of a plurality of second metal patterns, a corresponding second metal pattern, wherein one contact pad is provided to each of a plurality of first buses and a plurality of second buses.
摘要翻译： 半导体集成电路包括形成在半导体衬底上的功率晶体管，多个第一金属图案和多个第二金属图案，其形成在功率晶体管的正上方并用作第一电极和作为功率晶体管的第二电极 分别与多个第一金属图形电连接的多个第一总线，相应的第一金属图案，与多个第二金属图案电连接的多个第二总线，相应的第二金属图案 其中，一个接触垫被提供给多个第一总线和多个第二总线中的每一个。
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