公开(公告)号：US07045816B2

公开(公告)日：2006-05-16

申请号：US10609631

申请日：2003-07-01

申请人： Shingo Ishihara ,  Masatoshi Wakagi ,  Masahiko Ando

发明人： Shingo Ishihara ,  Masatoshi Wakagi ,  Masahiko Ando

IPC分类号： H01L29/04 ,  H01L35/24

CPC分类号： H01L29/78696 ,  G02F1/1368 ,  H01L21/31116 ,  H01L27/283 ,  H01L29/4908 ,  H01L51/0002 ,  H01L51/0014 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0545

摘要： The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes 102, gate insulating film 103, source electrodes 104, and drain electrodes 105 are formed on a glass substrate 101. A patterned insulating film is formed thereon, and a part of the film in the region 110 on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film 107 in the region 110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film 108 on the patterned insulating film 106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.

摘要翻译： 本发明提供一种薄膜晶体管，其中半导体沟道区被图案化。 在玻璃基板101上形成栅极102，栅极绝缘膜103，源电极104和漏电极105。 在其上形成图案化的绝缘膜，并且去除栅极上的区域110中的膜的一部分。 通过气相沉积在其上形成有机半导体膜。 去除图案化绝缘膜的区域110中的有机半导体膜107变为沟道区，并且与图案化绝缘膜106上的有机半导体膜108分离。 因此，有机半导体沟道区被图案化以具有与栅电极相同的尺寸。 根据本发明，其中半导体区域被精确地图案化的薄膜晶体管变得可用。

公开(公告)号：US06593977B2

公开(公告)日：2003-07-15

申请号：US09949091

申请日：2001-09-10

申请人： Shingo Ishihara ,  Masatoshi Wakagi ,  Masahiko Ando

发明人： Shingo Ishihara ,  Masatoshi Wakagi ,  Masahiko Ando

IPC分类号： G02F1136

CPC分类号： H01L29/78696 ,  G02F1/1368 ,  H01L21/31116 ,  H01L27/283 ,  H01L29/4908 ,  H01L51/0002 ,  H01L51/0014 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0545

摘要： The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes 102, gate insulating film 103, source electrodes 104, and drain electrodes 105 are formed on a glass substrate 101. A patterned insulating film is formed thereon, and a part of the film in the region 110 on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film 107 in the region 110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film 108 on the patterned insulating film 106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.

摘要翻译： 本发明提供一种薄膜晶体管，其中半导体沟道区被图案化。 在玻璃基板101上形成栅极102，栅极绝缘膜103，源电极104和漏电极105.在其上形成有图案化的绝缘膜，并且去除栅极上的区域110中的一部分膜。 通过气相沉积在其上形成有机半导体膜。 去除图案化绝缘膜的区域110中的有机半导体膜107变为沟道区，并且与图案化绝缘膜106上的有机半导体膜108分离。因此，有机半导体沟道区被图案化以具有 与栅电极尺寸相同。 根据本发明，其中半导体区域被精确地图案化的薄膜晶体管变得可用。

公开(公告)号：US06300988B1

公开(公告)日：2001-10-09

申请号：US09526557

申请日：2000-03-16

申请人： Shingo Ishihara ,  Masatoshi Wakagi ,  Masahiko Ando

发明人： Shingo Ishihara ,  Masatoshi Wakagi ,  Masahiko Ando

IPC分类号： G02F1136

CPC分类号： H01L29/78696 ,  G02F1/1368 ,  H01L21/31116 ,  H01L27/283 ,  H01L29/4908 ,  H01L51/0002 ,  H01L51/0014 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0545

摘要： The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes 102, gate insulating film 103, source electrodes 104, and drain electrodes 105 are formed on a glass substrate 101. A patterned insulating film is formed thereon, and a part of the film in the region 110 on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film 107 in the region 110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film 108 on the patterned insulating film 106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.

摘要翻译： 本发明提供一种薄膜晶体管，其中半导体沟道区被图案化。 在玻璃基板101上形成栅极102，栅极绝缘膜103，源电极104和漏电极105.在其上形成有图案化的绝缘膜，并且去除栅极上的区域110中的一部分膜。 通过气相沉积在其上形成有机半导体膜。 去除图案化绝缘膜的区域110中的有机半导体膜107变为沟道区，并且与图案化绝缘膜106上的有机半导体膜108分离。因此，有机半导体沟道区被图案化以具有 与栅电极尺寸相同。 根据本发明，其中半导体区域被精确地图案化的薄膜晶体管变得可用。

公开(公告)号：US07521716B2

公开(公告)日：2009-04-21

申请号：US10569834

申请日：2004-08-18

申请人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

发明人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

IPC分类号： H01L29/04

CPC分类号： H01L51/0541 ,  H01L27/124 ,  H01L27/1292 ,  H01L29/66765 ,  H01L29/78678 ,  H01L51/0021

摘要： Using a lower electrode as a photomask, a lyophobic region having generally the same pattern as that of the lower electrode and a lyophilic region having a pattern which is generally the inversion of the lower electrode pattern are formed on an insulating film. A conductive ink is applied to the lyophobic region and baked. Thus, an upper electrode having a pattern which is generally the inversion of the lower electrode pattern is formed in a self-alignment manner. Therefore no misalignment occurs even if a printing method is used. Thus, a semiconductor device such as an active-matrix thin-film transistor substrate can be fabricated by using a printing method.

摘要翻译： 使用下部电极作为光掩模，在绝缘膜上形成通常具有与下部电极相同图案的疏液区域和具有通常为下部电极图案的反转的图案的亲液性区域。 将导电油墨施加到疏液区域并烘烤。 因此，具有通常为下电极图案的反转的图案的上电极以自对准方式形成。 因此，即使使用打印方法也不会发生错位。 因此，可以通过使用印刷方法来制造诸如有源矩阵薄膜晶体管基板的半导体器件。

公开(公告)号：US07394095B2

公开(公告)日：2008-07-01

申请号：US11501489

申请日：2006-08-08

申请人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

发明人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

IPC分类号： H01L29/08

CPC分类号： H01L51/0541 ,  H01L27/124 ,  H01L27/1292 ,  H01L29/66765 ,  H01L29/78678 ,  H01L51/0021

摘要： In the present invention, a lower electrode is utilized as a photomask to form a liquid-repellent region having a generally same pattern shape as that of the lower electrode and a liquid-attracting region having a generally reversed pattern shape on an insulating film. A conductive ink is coated and calcined in the liquid-attracting region to form an upper electrode having a generally reversed pattern shape to the lower electrode in a self-aligned manner, eliminating the occurrence of misregistration even when a printing method is used. Consequently, semiconductor devices such as an active matrix thin film transistor substrate can be formed using a printing method.

摘要翻译： 在本发明中，下电极用作光掩模，以形成具有与下电极大致相同图案形状的疏液区域和在绝缘膜上具有大致反转图案形状的吸液区域。 导电油墨在吸液区域被涂覆和煅烧，以自对准的方式形成具有与下电极大致相反的图案形状的上电极，消除了即使使用打印方法时发生配准。 因此，可以使用印刷方法形成诸如有源矩阵薄膜晶体管基板的半导体器件。

公开(公告)号：US07202496B2

公开(公告)日：2007-04-10

申请号：US10970224

申请日：2004-10-21

申请人： Masahiko Ando ,  Masatoshi Wakagi ,  Hiroshi Sasaki

发明人： Masahiko Ando ,  Masatoshi Wakagi ,  Hiroshi Sasaki

IPC分类号： H01L35/24 ,  H01L21/4763

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0533

摘要： The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.

摘要翻译： 本方法通过在表面的栅极电极投影区域中选择性地配置自组装单层膜来防止由液晶显示器的有源矩阵型薄膜晶体管基板中的漏光电流引起的切换中的故障，并且防止显示故障 具有高清晰度的绝缘体膜，并且仅通过选择性地改善栅极电极投影区域中的有机半导体膜的取向顺序，而不改善栅极电极投影区域外的光的照射部分的阶数。

公开(公告)号：US20050051770A1

公开(公告)日：2005-03-10

申请号：US10786567

申请日：2004-02-25

申请人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

发明人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

IPC分类号： G06K19/00 ,  G09F9/30 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/786 ,  H01L51/40 ,  H01L29/08 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L51/0541 ,  H01L27/124 ,  H01L27/1292 ,  H01L29/66765 ,  H01L29/78678 ,  H01L51/0021

摘要： In the present invention, a lower electrode is utilized as a photomask to form a liquid-repellent region having a generally same pattern shape as that of the lower electrode and a liquid-attracting region having a generally reversed pattern shape on an insulating film. A conductive ink is coated and calcined in the liquid-attracting region to form an upper electrode having a generally reversed pattern shape to the lower electrode in a self-aligned manner, eliminating the occurrence of misregistration even when a printing method is used. Consequently, semiconductor devices such as an active matrix thin film transistor substrate can be formed using a printing method.

摘要翻译： 在本发明中，下电极用作光掩模，以形成具有与下电极大致相同图案形状的疏液区域和在绝缘膜上具有大致反转图案形状的吸液区域。 导电油墨在吸液区域被涂覆和煅烧，以自对准的方式形成具有与下电极大致相反的图案形状的上电极，消除了即使使用打印方法时发生配准。 因此，可以使用印刷方法形成诸如有源矩阵薄膜晶体管基板的半导体器件。

公开(公告)号：US07655947B2

公开(公告)日：2010-02-02

申请号：US11503114

申请日：2006-08-14

申请人： Masahiko Ando ,  Masahiro Kawasaki ,  Masatoshi Wakagi

发明人： Masahiko Ando ,  Masahiro Kawasaki ,  Masatoshi Wakagi

IPC分类号： H01L29/10

CPC分类号： H01L29/78669 ,  H01L29/66765 ,  H01L29/78618

摘要： The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.

摘要翻译： 本发明提供了一种薄膜晶体管，其包括漏电极和源电极，所述漏电极和源电极由形成在与非晶硅层的接触部分上的沟道区域分开，并且其中来自沟道区域的杂质被去除并且剩余的杂质扩散到所述触点中 部分以形成接触层，其中接触层具有至少低于第一电阻的第二电阻。

公开(公告)号：US20060261334A1

公开(公告)日：2006-11-23

申请号：US10569834

申请日：2004-08-18

申请人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

发明人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

IPC分类号： H01L29/04

CPC分类号： H01L51/0541 ,  H01L27/124 ,  H01L27/1292 ,  H01L29/66765 ,  H01L29/78678 ,  H01L51/0021

摘要： Using a lower electrode as a photomask, a yophobic region having generally the same pattern as that of the lower electrode and a yophibic region having a pattern which is generally the inversion of the lower electrode pattern are formed on an insulating film. A conductive ink is applied to the yophobic region and baked. Thus, an upper electrode having a pattern which is generally the inversion of the lower electrode pattern is formed in a self-alignment manner. Therefore no misalignment occurs even if a printing method is used. Thus, a semiconductor device such as an active-matrix thin-film transistor substrate can be fabricated by using a printing method.

摘要翻译： 使用下部电极作为光掩模，在绝缘膜上形成具有与下部电极大致相同图案的阴离子区域和具有通常为下部电极图案的反转的图案的yophibic区域。 将导电油墨施加到偏爱区域并烘烤。 因此，具有通常为下电极图案的反转的图案的上电极以自对准方式形成。 因此，即使使用打印方法也不会发生错位。 因此，可以通过使用印刷方法来制造诸如有源矩阵薄膜晶体管基板的半导体器件。

公开(公告)号：US06828582B1

公开(公告)日：2004-12-07

申请号：US10786888

申请日：2004-02-25

申请人： Masahiko Ando ,  Masatoshi Wakagi ,  Hiroshi Sasaki

发明人： Masahiko Ando ,  Masatoshi Wakagi ,  Hiroshi Sasaki

IPC分类号： H01L3524

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0533

摘要： The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.

摘要翻译： 本方法通过在表面的栅极电极投影区域中选择性地配置自组装单层膜来防止由液晶显示器的有源矩阵型薄膜晶体管基板中的漏光电流引起的切换中的故障，并且防止显示故障 具有高清晰度的绝缘体膜，并且仅通过选择性地改善栅极电极投影区域中的有机半导体膜的取向顺序，而不改善栅极电极投影区域外的光的照射部分的阶数。