公开(公告)号：US5968273A

公开(公告)日：1999-10-19

申请号：US910329

申请日：1997-08-13

申请人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano ,  Kinya Miyashita ,  Yoshiaki Tatsumi ,  Seiichirou Miyata

发明人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano ,  Kinya Miyashita ,  Yoshiaki Tatsumi ,  Seiichirou Miyata

IPC分类号： C23C16/44 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/458 ,  H01L21/00 ,  H01L21/683 ,  C23C16/00

CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/401 ,  C23C16/4586 ,  H01L21/67109 ,  H01L21/6831

摘要： Disclosed is a wafer stage allowing a plasma process under a heating condition at a high temperature, particularly, 400.degree. C. or more using the improved electrostatically chucking technology with the increased temperature-controllability. The wafer stage includes an electrostatic chuck and a temperature adjusting jacket disposed under said electrostatic chuck. The electrostatic chuck includes: a dielectric member made from an insulating material; an electrode formed of a brazing layer, which is disposed on the underside of said dielectric member for fixing said dielectric member; an aluminum nitride plate disposed on the underside of said electrode, to which said dielectric member is fixed through said electrode; a heater, disposed on the underside of said aluminum nitride plate, for heating said dielectric member; and a metal plate disposed on the underside of said aluminum nitride plate and also at least on a top or bottom side of said heater. The temperature adjusting jacket is made from a composite aluminum based material prepared by treatment of aluminum or an aluminum alloy with inorganic fibers under a high pressure, and includes a temperature adjusting means.

摘要翻译： 公开了一种使用改进的静电吸附技术，在升高的温度可控性的高温下，特别是在400℃以上的加热条件下进行等离子体处理的晶片台。 晶片台包括设置在所述静电卡盘下方的静电卡盘和温度调节套管。 静电卡盘包括：由绝缘材料制成的电介质构件; 由钎焊层形成的电极，其设置在所述电介质构件的下侧，用于固定所述电介质构件; 设置在所述电极的下侧的氮化铝板，所述电介质构件通过所述电极固定到所述电极上; 加热器，设置在所述氮化铝板的下侧，用于加热所述电介质构件; 以及金属板，其设置在所述氮化铝板的下侧，并且还至少在所述加热器的顶部或底部。 温度调节外套由通过在高压下用无机纤维处理铝或铝合金制备的复合铝基材料制成，并且包括温度调节装置。

公开(公告)号：US5981913A

公开(公告)日：1999-11-09

申请号：US821334

申请日：1997-03-20

申请人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano ,  Kinya Miyashita ,  Seiichirou Miyata ,  Yoshiaki Tatsumi

发明人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano ,  Kinya Miyashita ,  Seiichirou Miyata ,  Yoshiaki Tatsumi

IPC分类号： B23Q3/15 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00 ,  H05B3/68 ,  B23B5/22 ,  C23C16/00

CPC分类号： H01L21/67103 ,  H01L21/6831 ,  H01J2237/2001 ,  Y10T279/23

摘要： There are provided a static electricity chuck which can vary the temperature of a wafer in a short time without adversely effecting throughput, and a wafer stage having the static electricity chuck. The static electricity chuck includes a dielectric member 4 formed of insulating material, an electrode 5 of conductor which is disposed at the lower side of the dielectric member 4, and a heater 6 which is disposed at the lower side of the electrode 5 and heats the dielectric member 4. The wafer stage 1 includes the static electricity chuck which is provided on a metal jacket having cooling apparatus.

摘要翻译： 提供了一种可以在短时间内改变晶片的温度而不会不利地影响生产量的静电卡盘，以及具有静电卡盘的晶片台。 静电卡盘包括由绝缘材料形成的电介质部件4，设置在电介质部件4的下侧的导体电极5和设置在电极5的下侧的加热器6， 电介质构件4.晶片台1包括设置在具有冷却装置的金属护套上的静电卡盘。

公开(公告)号：US6063710A

公开(公告)日：2000-05-16

申请号：US804412

申请日：1997-02-21

申请人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano

发明人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano

IPC分类号： H01L21/3213 ,  H01L21/302

CPC分类号： H01L21/32137

摘要： A method of dry etching treatment capable of attaining both high selectivity and fine fabrication at a high accuracy simultaneously is provided, in which an etching treatment comprising a plurality of steps are applied to a specimen W in one identical processing apparatus, and the temperature of the specimen is changed between etching of one step and etching of another step succeeding thereto, among the plurality of the steps, thereby applying etching at temperatures different between the one step and the step succeeding thereto.

摘要翻译： 提供一种能够同时实现高精度高选择性和精细制造的干蚀刻处理方法，其中在一个相同的处理装置中对样本W施加包括多个步骤的蚀刻处理，并且 在多个步骤之间，在一个步骤的蚀刻和其后的另一个步骤的蚀刻之间改变样品，从而在一步和其之后的步骤的温度下进行蚀刻。

公开(公告)号：US06174408B1

公开(公告)日：2001-01-16

申请号：US09371369

申请日：1999-08-10

申请人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano

发明人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano

IPC分类号： H01L2100

CPC分类号： H01L21/32137

摘要： An apparatus 1 for manufacturing a semiconductor device capable of actually putting the low temperature etching technique into practical use is also provided, having a vacuum chamber 2 in which a specimen stage 12 having a cooling means is disposed at the inside and a plasma generation means for generating plasmas, in which a specimen, for example, semiconductor substrate W is processed by generating plasmas while controlling the temperature of the specimen W placed on a specimen stage 12 by cooling the specimen stage 12 by a cooling means. The cooling means uses a liquefied gas or a gas as a coolant, the flow channel for the coolant is formed by arranging in parallel a plurality of pipelines 21a-21d having diameters different from each other at positions before flowing to the specimen stage, and the specimen stage 12 is cooled by flowing the coolant through the pipelines 21a-21d. The cooling means is provided with a control means 22 for controlling the amount of the coolant caused to flow to each of the plurality of pipelines 21a-21d respectively.

摘要翻译： 还提供了一种用于制造实际将低温蚀刻技术实际使用的半导体器件的装置1，其具有真空室2，其中具有冷却装置的样品台12位于其内部，以及等离子体产生装置 产生等离子体，其中通过产生等离子体来处理样品，例如半导体衬底W，同时通过冷却装置冷却样品台12来控制放置在样品台12上的样品W的温度。 冷却装置使用液化气体或气体作为冷却剂，通过在流动到试样台之前的位置处并排布置具有彼此直径不同的多条管线21a〜21d而形成冷却剂流路， 通过使冷却剂流过管线21a〜21d来冷却试样台12。 冷却装置设置有控制装置22，用于分别控制流向多个管道21a-21d中的每一个的冷却剂的量。

公开(公告)号：US06320737B1

公开(公告)日：2001-11-20

申请号：US09572904

申请日：2000-05-17

申请人： Shinsuke Hirano ,  Tomohide Jozaki

发明人： Shinsuke Hirano ,  Tomohide Jozaki

IPC分类号： H02H1300

CPC分类号： H01L21/67248 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

摘要： The electrostatic chucking device 2 comprises an electrostatic chuck 4; a temperature detecting unit 10 for detecting the temperature of the electrostatic chuck 4; a power supply 9 connected to the electrostatic chuck 4 and used for impressing a DC voltage to the electrostatic chuck 4 to provide it with an attracting force; and a controller 11 for controlling the value of the DC voltage impressed by the power supply 9 according to the temperature of the electrostatic chuck detected by the temperature detecting unit 10. When the value of the temperature of the electrostatic chuck 4 detected by the temperature detecting unit 10 is higher than the preset value, the controller 11 lowers the voltage impressed by the power supply 9 from the preset value and when the value of the temperature of the electrostatic chuck 4 is lower than the preset value, the controller 11 raises the impressed voltage from the preset value, whereby the attracting force of the electrostatic chuck 4 can be kept irrespective of temperature change of the electrostatic chuck 4.

摘要翻译： 静电吸盘装置2包括静电吸盘4; 用于检测静电吸盘4的温度的温度检测单元10; 连接到静电吸盘4的电源9，用于向静电吸盘4施加直流电压以提供吸引力; 以及控制器11，用于根据由温度检测单元10检测到的静电卡盘的温度来控制由电源9施加的直流电压的值。当通过温度检测检测到的静电卡盘4的温度值 单元10高于预设值时，控制器11从预设值降低由电源9施加的电压，并且当静电吸盘4的温度值低于预设值时，控制器11将印象 电压，从而可以保持静电吸盘4的吸引力，而与静电吸盘4的温度变化无关。

公开(公告)号：US6084763A

公开(公告)日：2000-07-04

申请号：US879221

申请日：1997-06-19

申请人： Shinsuke Hirano ,  Tomohide Jozaki

发明人： Shinsuke Hirano ,  Tomohide Jozaki

IPC分类号： C23C14/50 ,  H01L21/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/67248 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

摘要： The electrostatic chucking device 2 comprises an electrostatic chuck 4; a temperature detecting unit 10 for detecting the temperature of the electrostatic chuck 4; a power supply 9 connected to the electrostatic chuck 4 and used for impressing a DC voltage to the electrostatic chuck 4 to provide it with an attracting force; and a controller 11 for controlling the value of the DC voltage impressed by the power supply 9 according to the temperature of the electrostatic chuck detected by the temperature detecting unit 10. When the value of the temperature of the electrostatic chuck 4 detected by the temperature detecting unit 10 is higher than the preset value, the controller 11 lowers the voltage impressed by the power supply 9 from the preset value and when the value of the temperature of the electrostatic chuck 4 is lower than the preset value, the controller 11 raises the impressed voltage from the preset value, whereby the attracting force of the electrostatic chuck 4 can be kept irrespective of temperature change of the electrostatic chuck 4.

摘要翻译： 静电吸盘装置2包括静电吸盘4; 用于检测静电吸盘4的温度的温度检测单元10; 连接到静电吸盘4的电源9，用于向静电吸盘4施加直流电压以提供吸引力; 以及控制器11，用于根据由温度检测单元10检测到的静电卡盘的温度来控制由电源9施加的直流电压的值。当通过温度检测检测到的静电卡盘4的温度值 单元10高于预设值时，控制器11从预设值降低由电源9施加的电压，并且当静电吸盘4的温度值低于预设值时，控制器11将印象 电压，从而可以保持静电吸盘4的吸引力，而与静电吸盘4的温度变化无关。

公开(公告)号：US06391437B1

公开(公告)日：2002-05-21

申请号：US09015636

申请日：1998-01-29

申请人： Shingo Kadomura ,  Kei Takatsu ,  Shinsuke Hirano

发明人： Shingo Kadomura ,  Kei Takatsu ,  Shinsuke Hirano

IPC分类号： C09J502

CPC分类号： C04B37/006 ,  B32B18/00 ,  C04B35/111 ,  C04B35/195 ,  C04B35/565 ,  C04B35/581 ,  C04B35/652 ,  C04B35/803 ,  C04B37/026 ,  C04B41/009 ,  C04B41/52 ,  C04B2235/526 ,  C04B2235/5264 ,  C04B2237/062 ,  C04B2237/12 ,  C04B2237/121 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/38 ,  C04B2237/62 ,  C04B2237/64 ,  C04B2237/68 ,  C04B2237/72 ,  Y10T428/249955 ,  Y10T428/249956 ,  C04B41/4521 ,  C04B41/4523 ,  C04B41/5155 ,  C04B41/4527 ,  C04B41/5031 ,  C04B41/5063 ,  C04B41/522 ,  C04B38/00

摘要： The invention provides a substrate processing apparatus using a composite material which permits avoidance of occurrence of damages caused by the difference in thermal expansion between different materials and can be with stand the use at high temperatures. The substrate processing apparatus for processing a substrate is partially (for example, a substrate mounting stage) composed of a composite material 11 consisting of a matrix 12 comprising a ceramics member made of, for example, cordierite ceramics, aluminum nitride and/or a texture filled with an aluminum-based material (for example, aluminum or aluminum and silicon), and a ceramics layer (comprising, for example, Al2O3 and/or AlN) provided on the surface of the matrix 12.

摘要翻译： 本发明提供一种使用复合材料的基板处理装置，其能够避免由不同材料之间的热膨胀差引起的损害的发生，并且可以在高温下使用。 用于处理基板的基板处理装置部分地（例如，基板安装台）由复合材料11组成，复合材料11由包括例如堇青石陶瓷，氮化铝和/或纹理的陶瓷构件的基体12组成 填充有铝基材料（例如铝或铝和硅），以及设置在基体12的表面上的陶瓷层（包括例如Al 2 O 3和/或AlN）。

公开(公告)号：US06668905B1

公开(公告)日：2003-12-30

申请号：US09187226

申请日：1998-11-06

申请人： Shingo Kadomura ,  Kei Takatsu ,  Shinsuke Hirano ,  Nobuyuki Suzuki

发明人： Shingo Kadomura ,  Kei Takatsu ,  Shinsuke Hirano ,  Nobuyuki Suzuki

IPC分类号： B22D1902

CPC分类号： B22D19/14 ,  B22D18/02 ,  Y10T428/12146 ,  Y10T428/12486

摘要： A method for producing an aluminum nitride/aluminum base composite material comprising the steps of; (A) charging aluminum nitride powder into a container provided in a molten metal pressure apparatus, (B) applying pressure to the aluminum nitride powder in the container, (C) pouring a molten aluminum base material into the container, and, (D) applying pressure to the molten aluminum base material in the container to fill the aluminum base material in space between the aluminum nitride powder particles.

摘要翻译： 一种生产氮化铝/铝基复合材料的方法，包括以下步骤： （A）将氮化铝粉末装入设置在熔融金属压力装置中的容器中，（B）向容器中的氮化铝粉末施加压力，（C）将熔融铝基材料倒入容器中，（D） 对容器中的熔融铝基材施加压力，以填充氮化铝粉末颗粒之间的空间中的铝基材料。

公开(公告)号：US06805973B2

公开(公告)日：2004-10-19

申请号：US10653357

申请日：2003-09-03

申请人： Shingo Kadomura ,  Kei Takatsu ,  Shinsuke Hirano ,  Nobuyuki Suzuki

发明人： Shingo Kadomura ,  Kei Takatsu ,  Shinsuke Hirano ,  Nobuyuki Suzuki

IPC分类号： C09J502

CPC分类号： B22D19/14 ,  B22D18/02 ,  Y10T428/12146 ,  Y10T428/12486

摘要： A method for producing an aluminum nitride/aluminum base composite material comprising the steps of; (A) charging aluminum nitride powder into a container provided in a molten metal pressure apparatus, (B) applying pressure to the aluminum nitride powder in the container, (C) pouring a molten aluminum base material into the container, and, (D) applying pressure to the molten aluminum base material in the container to fill the aluminum base material in space between the aluminum nitride powder particles.

摘要翻译： 一种生产氮化铝/铝基复合材料的方法，包括以下步骤： （A）将氮化铝粉末装入设置在熔融金属压力装置中的容器中，（B）向容器中的氮化铝粉末施加压力，（C）将熔融铝基材料倒入容器中，（D） 对容器中的熔融铝基材施加压力，以填充氮化铝粉末颗粒之间的空间中的铝基材料。

公开(公告)号：US06120661A

公开(公告)日：2000-09-19

申请号：US327224

申请日：1999-06-07

申请人： Shinsuke Hirano ,  Kei Takatsu ,  Shingo Kadomura

发明人： Shinsuke Hirano ,  Kei Takatsu ,  Shingo Kadomura

IPC分类号： H01L21/302 ,  C03C15/00 ,  C03C17/00 ,  C23C16/458 ,  H01L21/00 ,  H01L21/205 ,  H01L21/30 ,  H01L21/3065 ,  C23C14/34 ,  C23F1/02 ,  H01L21/203

CPC分类号： H01L21/67109 ,  C03C15/00 ,  C03C17/002 ,  C23C16/4581 ,  C23C16/4583 ,  C23C16/4586 ,  H01J37/32467 ,  H01L21/67103 ,  H01J2237/2001 ,  Y10S156/914

摘要： A glass substrate processing apparatus, part of which comprises a composite material, the composite material being formed of a matrix and a ceramic layer formed on a surface of the matrix by a thermal spraying method, the matrix being formed of a ceramic member and an aluminum-containing material filled in a texture of the ceramic member.

摘要翻译： 一种玻璃基板处理装置，其一部分包括复合材料，所述复合材料由基体和通过热喷涂法形成在所述基体的表面上的陶瓷层形成，所述基体由陶瓷构件和铝 填充在陶瓷构件的纹理中的材料。