公开(公告)号：US20130143166A1

公开(公告)日：2013-06-06

申请号：US13611070

申请日：2012-09-12

申请人： Tomohide Jozaki

发明人： Tomohide Jozaki

IPC分类号： B05D5/00

CPC分类号： B05D5/00 ,  G03F7/161 ,  G03F7/162

摘要： There is provided a resist film forming apparatus including a coating unit configured to drop, rotate, and spread a resist while rotating a substrate, a heating unit configured to heat a specimen in which the resist is coated on the substrate, a metering unit configured to measure a weight of the specimen being heated, and a control unit configured to control lamination of a plurality of resist layers on the specimen by executing a process of forming a resist layer on the substrate by performing heating in the heating unit until a predetermined amount of solvent has evaporated from a resist coated on the specimen based on the measured weight of the specimen, and repeating for a predetermined number of times a process of forming a new resist layer on a resist layer formed on the specimen by similarly controlling the coating unit and the heating unit.

摘要翻译： 提供了一种抗蚀剂膜形成装置，包括：涂覆单元，被配置为在旋转基板的同时降低，旋转和展开抗蚀剂;加热单元，被配置为加热其上涂覆有抗蚀剂的样品在基底上;计量单元， 测量加热样品的重量;以及控制单元，其被配置为通过在加热单元中进行加热来执行在基板上形成抗蚀剂层的处理，从而控制样品上的多个抗蚀剂层的层叠，直到预定量的 溶剂从涂覆在试样上的抗蚀剂基于测定的重量蒸发掉，并且通过类似地控制涂布单元并在反应层上形成新的抗蚀剂层，形成在抗蚀剂层上的工艺， 加热单元。

公开(公告)号：US07036673B2

公开(公告)日：2006-05-02

申请号：US10366080

申请日：2003-02-13

申请人： Tomohide Jozaki

发明人： Tomohide Jozaki

IPC分类号： B65D21/32

CPC分类号： B65D21/0224 ,  B65D25/107 ,  Y10T29/49 ,  Y10T29/53313 ,  Y10T29/534

摘要： A lot management production method in which the lot size is reduced in order to respond to an order for small volume of large variety, without increasing the intermediate inventory and reducing lead-time, however without reducing the productivity of a production of large volume of small variety. Part of the processes in a production line are performed for pieces, or products to be manufactured, in a single lot, while other processes are done for pieces in a group or aggregate of single lots.

公开(公告)号：US6084763A

公开(公告)日：2000-07-04

申请号：US879221

申请日：1997-06-19

申请人： Shinsuke Hirano ,  Tomohide Jozaki

发明人： Shinsuke Hirano ,  Tomohide Jozaki

IPC分类号： C23C14/50 ,  H01L21/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/67248 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

摘要： The electrostatic chucking device 2 comprises an electrostatic chuck 4; a temperature detecting unit 10 for detecting the temperature of the electrostatic chuck 4; a power supply 9 connected to the electrostatic chuck 4 and used for impressing a DC voltage to the electrostatic chuck 4 to provide it with an attracting force; and a controller 11 for controlling the value of the DC voltage impressed by the power supply 9 according to the temperature of the electrostatic chuck detected by the temperature detecting unit 10. When the value of the temperature of the electrostatic chuck 4 detected by the temperature detecting unit 10 is higher than the preset value, the controller 11 lowers the voltage impressed by the power supply 9 from the preset value and when the value of the temperature of the electrostatic chuck 4 is lower than the preset value, the controller 11 raises the impressed voltage from the preset value, whereby the attracting force of the electrostatic chuck 4 can be kept irrespective of temperature change of the electrostatic chuck 4.

摘要翻译： 静电吸盘装置2包括静电吸盘4; 用于检测静电吸盘4的温度的温度检测单元10; 连接到静电吸盘4的电源9，用于向静电吸盘4施加直流电压以提供吸引力; 以及控制器11，用于根据由温度检测单元10检测到的静电卡盘的温度来控制由电源9施加的直流电压的值。当通过温度检测检测到的静电卡盘4的温度值 单元10高于预设值时，控制器11从预设值降低由电源9施加的电压，并且当静电吸盘4的温度值低于预设值时，控制器11将印象 电压，从而可以保持静电吸盘4的吸引力，而与静电吸盘4的温度变化无关。

公开(公告)号：US06235655B1

公开(公告)日：2001-05-22

申请号：US09448590

申请日：1999-11-24

申请人： Tomohide Jozaki

发明人： Tomohide Jozaki

IPC分类号： H01L2126

CPC分类号： H01J37/32477 ,  H01J37/321

摘要： A problem in the manufacture of semiconductor wafers exists in that reaction product adhering to a quartz member is peeled off and falls on wafers, thus causing particles to contaminate the wafers. In system of introducing electro-magnetic waves from the outside via the quartz member, an inventive high-density plasma etching system for processing wafers by introducing electro-magnetic waves generated by a TCP electrode into a vacuum chamber via a quartz top board and by generating plasma by exciting gas within the chamber comprises a far infrared ray heater disposed above the quartz top board to heat the quartz top board by radiant heat of infrared rays generated from the far infrared ray heater, reducing the product adhering to the quartz member and thus the contaminating particles, thereby improving the yield of the wafers.

摘要翻译： 制造半导体晶片的问题在于，粘附在石英部件上的反应产物被剥离并落在晶片上，从而导致颗粒污染晶片。 在通过石英构件从外部引入电磁波的系统中，本发明的高密度等离子体蚀刻系统通过将由TCP电极产生的电磁波经由石英顶板引入真空室来处理晶片，并通过产生 通过室内激发气体的等离子体包括设置在石英顶板上方的远红外线加热器，以通过从远红外线加热器产生的红外线的辐射热来加热石英顶板，从而减少粘附到石英构件上的产品， 污染颗粒，从而提高晶片的产量。

公开(公告)号：US06204193B1

公开(公告)日：2001-03-20

申请号：US09291017

申请日：1999-04-14

申请人： Tomohide Jozaki

发明人： Tomohide Jozaki

IPC分类号： H01L21302

CPC分类号： H01L21/31116

摘要： A method for etching a laminated film comprising at least two layers of a semiconductor device, the method comprising: a step, in which etching of an upper layer is started with a first etching gas, and the etching of the upper layer is stopped before a lower layer is exposed; and a step, in which a remainder of the upper layer and the lower layer is etched with a second etching gas.

摘要翻译： 一种用于蚀刻包括至少两层半导体器件的层压膜的方法，所述方法包括：步骤，其中利用第一蚀刻气体开始上层的蚀刻，并且在上层的蚀刻在 下层暴露; 以及用第二蚀刻气体蚀刻上层和下层的剩余部分的步骤。

公开(公告)号：US06174408B1

公开(公告)日：2001-01-16

申请号：US09371369

申请日：1999-08-10

申请人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano

发明人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano

IPC分类号： H01L2100

CPC分类号： H01L21/32137

摘要： An apparatus 1 for manufacturing a semiconductor device capable of actually putting the low temperature etching technique into practical use is also provided, having a vacuum chamber 2 in which a specimen stage 12 having a cooling means is disposed at the inside and a plasma generation means for generating plasmas, in which a specimen, for example, semiconductor substrate W is processed by generating plasmas while controlling the temperature of the specimen W placed on a specimen stage 12 by cooling the specimen stage 12 by a cooling means. The cooling means uses a liquefied gas or a gas as a coolant, the flow channel for the coolant is formed by arranging in parallel a plurality of pipelines 21a-21d having diameters different from each other at positions before flowing to the specimen stage, and the specimen stage 12 is cooled by flowing the coolant through the pipelines 21a-21d. The cooling means is provided with a control means 22 for controlling the amount of the coolant caused to flow to each of the plurality of pipelines 21a-21d respectively.

摘要翻译： 还提供了一种用于制造实际将低温蚀刻技术实际使用的半导体器件的装置1，其具有真空室2，其中具有冷却装置的样品台12位于其内部，以及等离子体产生装置 产生等离子体，其中通过产生等离子体来处理样品，例如半导体衬底W，同时通过冷却装置冷却样品台12来控制放置在样品台12上的样品W的温度。 冷却装置使用液化气体或气体作为冷却剂，通过在流动到试样台之前的位置处并排布置具有彼此直径不同的多条管线21a〜21d而形成冷却剂流路， 通过使冷却剂流过管线21a〜21d来冷却试样台12。 冷却装置设置有控制装置22，用于分别控制流向多个管道21a-21d中的每一个的冷却剂的量。

公开(公告)号：US5981913A

公开(公告)日：1999-11-09

申请号：US821334

申请日：1997-03-20

申请人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano ,  Kinya Miyashita ,  Seiichirou Miyata ,  Yoshiaki Tatsumi

发明人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano ,  Kinya Miyashita ,  Seiichirou Miyata ,  Yoshiaki Tatsumi

IPC分类号： B23Q3/15 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00 ,  H05B3/68 ,  B23B5/22 ,  C23C16/00

CPC分类号： H01L21/67103 ,  H01L21/6831 ,  H01J2237/2001 ,  Y10T279/23

摘要： There are provided a static electricity chuck which can vary the temperature of a wafer in a short time without adversely effecting throughput, and a wafer stage having the static electricity chuck. The static electricity chuck includes a dielectric member 4 formed of insulating material, an electrode 5 of conductor which is disposed at the lower side of the dielectric member 4, and a heater 6 which is disposed at the lower side of the electrode 5 and heats the dielectric member 4. The wafer stage 1 includes the static electricity chuck which is provided on a metal jacket having cooling apparatus.

摘要翻译： 提供了一种可以在短时间内改变晶片的温度而不会不利地影响生产量的静电卡盘，以及具有静电卡盘的晶片台。 静电卡盘包括由绝缘材料形成的电介质部件4，设置在电介质部件4的下侧的导体电极5和设置在电极5的下侧的加热器6， 电介质构件4.晶片台1包括设置在具有冷却装置的金属护套上的静电卡盘。

公开(公告)号：US06655000B2

公开(公告)日：2003-12-02

申请号：US10073497

申请日：2002-02-11

申请人： Tomohide Jozaki

发明人： Tomohide Jozaki

IPC分类号： B23P1704

CPC分类号： B65D21/0224 ,  B65D25/107 ,  Y10T29/49 ,  Y10T29/53313 ,  Y10T29/534

摘要： A lot management production method in which the lot size is reduced in order to respond to an order for small volume of large variety, without increasing the intermediate inventory and reducing lead-time, however without reducing the productivity of a production of large volume of small variety. Part of the processes in a production line are performed for pieces, or products to be manufactured, in a single lot, while other processes are done for pieces in a group or aggregate of single lots.

公开(公告)号：US5968273A

公开(公告)日：1999-10-19

申请号：US910329

申请日：1997-08-13

申请人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano ,  Kinya Miyashita ,  Yoshiaki Tatsumi ,  Seiichirou Miyata

发明人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano ,  Kinya Miyashita ,  Yoshiaki Tatsumi ,  Seiichirou Miyata

IPC分类号： C23C16/44 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/458 ,  H01L21/00 ,  H01L21/683 ,  C23C16/00

CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/401 ,  C23C16/4586 ,  H01L21/67109 ,  H01L21/6831

摘要： Disclosed is a wafer stage allowing a plasma process under a heating condition at a high temperature, particularly, 400.degree. C. or more using the improved electrostatically chucking technology with the increased temperature-controllability. The wafer stage includes an electrostatic chuck and a temperature adjusting jacket disposed under said electrostatic chuck. The electrostatic chuck includes: a dielectric member made from an insulating material; an electrode formed of a brazing layer, which is disposed on the underside of said dielectric member for fixing said dielectric member; an aluminum nitride plate disposed on the underside of said electrode, to which said dielectric member is fixed through said electrode; a heater, disposed on the underside of said aluminum nitride plate, for heating said dielectric member; and a metal plate disposed on the underside of said aluminum nitride plate and also at least on a top or bottom side of said heater. The temperature adjusting jacket is made from a composite aluminum based material prepared by treatment of aluminum or an aluminum alloy with inorganic fibers under a high pressure, and includes a temperature adjusting means.

摘要翻译： 公开了一种使用改进的静电吸附技术，在升高的温度可控性的高温下，特别是在400℃以上的加热条件下进行等离子体处理的晶片台。 晶片台包括设置在所述静电卡盘下方的静电卡盘和温度调节套管。 静电卡盘包括：由绝缘材料制成的电介质构件; 由钎焊层形成的电极，其设置在所述电介质构件的下侧，用于固定所述电介质构件; 设置在所述电极的下侧的氮化铝板，所述电介质构件通过所述电极固定到所述电极上; 加热器，设置在所述氮化铝板的下侧，用于加热所述电介质构件; 以及金属板，其设置在所述氮化铝板的下侧，并且还至少在所述加热器的顶部或底部。 温度调节外套由通过在高压下用无机纤维处理铝或铝合金制备的复合铝基材料制成，并且包括温度调节装置。

公开(公告)号：US20130084783A1

公开(公告)日：2013-04-04

申请号：US13611110

申请日：2012-09-12

申请人： Tomohide Jozaki ,  Shunsuke Matsui

发明人： Tomohide Jozaki ,  Shunsuke Matsui

IPC分类号： B24B37/27 ,  B24B37/07

CPC分类号： B24B37/08 ,  B24B7/17 ,  B24B13/015 ,  B24B37/28

摘要： There is provided a grinding apparatus including: an upper surface plate; a lower surface plate disposed facing the upper surface plate and rotating in an opposite direction to the upper surface plate; a sun gear rotated by a same rotational shaft as the upper surface plate and the lower surface plate; an internal gear rotated by the same rotational shaft as the upper surface plate and the lower surface plate; and a planetary carrier in which a holding hole that holds a workpiece is formed and which revolves while rotating in engagement with the sun gear and the internal gear. The holding hole in the planetary carrier is provided with a cutaway in a side of the holding hole that contacts a side surface of the workpiece when the planetary carrier rotates.

摘要翻译： 提供了一种研磨装置，包括：上表面板; 下表面板，设置成面向上表面板并且沿与上表面板相反的方向旋转; 由与上表面板和下表面板相同的旋转轴旋转的太阳齿轮; 由与上表面板和下表面板相同的旋转轴旋转的内齿轮; 以及行星架，其中形成有保持工件的保持孔，并且与星形齿轮和内齿轮接合旋转。 行星架上的保持孔在行星齿轮架旋转时在保持孔的与侧面相接触的一侧设置有切口。