SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20140014951A1

    公开(公告)日:2014-01-16

    申请号:US13979478

    申请日:2012-01-05

    IPC分类号: H01L29/786

    摘要: A semiconductor device (100A) according to the present invention includes: an oxide semiconductor layer (4) having a first contact region (4a) and a second contact region (4b) and a channel region (4c) located between the first contact region (4a) and the second contact region (4b); a source electrode (5) formed on the oxide semiconductor layer (4) so as to be in contact with the first contact region (4a); and a drain electrode (6) formed on the oxide semiconductor layer (4) so as to be in contact with the second contact region (4b). All side faces of the oxide semiconductor layer (4) are located over the gate electrode (2); a width of the source electrode (5) is greater than a width of the oxide semiconductor layer (4); and a width of the drain electrode (6) is greater than a width of the oxide semiconductor layer (4).

    摘要翻译: 根据本发明的半导体器件(100A)包括:具有第一接触区域(4a)和第二接触区域(4b)的氧化物半导体层(4)和位于第一接触区域之间的沟道区域(4c) 4a)和第二接触区域(4b); 形成在所述氧化物半导体层(4)上以与所述第一接触区域(4a)接触的源电极(5); 以及形成在所述氧化物半导体层(4)上以与所述第二接触区域(4b)接触的漏电极(6)。 氧化物半导体层(4)的所有侧面都位于栅电极(2)的上方。 源电极(5)的宽度大于氧化物半导体层(4)的宽度; 并且所述漏电极(6)的宽度大于所述氧化物半导体层(4)的宽度。

    CIRCUIT BOARD, DISPLAY DEVICE, AND METHOD FOR PRODUCING CIRCUIT BOARD
    4.
    发明申请
    CIRCUIT BOARD, DISPLAY DEVICE, AND METHOD FOR PRODUCING CIRCUIT BOARD 有权
    电路板,显示装置及制造电路板的方法

    公开(公告)号:US20130146866A1

    公开(公告)日:2013-06-13

    申请号:US13643652

    申请日:2011-03-02

    IPC分类号: H01L27/12

    摘要: A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.

    摘要翻译: 电路板(1)在绝缘基板(2)上包括多个晶体管元件。 多个晶体管元件中的至少一个是氧化物TFT(10),其包括作为沟道层(11)的氧化物半导体。 多个晶体管元件中的至少一个是与作为电路元件的功能的氧化物TFT(10)不同的a-SiTFT(20)(i),(ii)包括作为沟道层(21)的无定形 硅半导体。 氧化物TFT(10)是顶栅晶体管,并且a-SiTFT(20)是底栅晶体管。 这提供:一种配置,其可以(a)增强配备有作为电路部件的各自功能不同的TFT的电路板的性能,(b)减小安装TFT所需的面积; 以及电路基板的制造方法。

    Driving assistance device and method of detecting vehicle adjacent thereto

    公开(公告)号:US10142595B2

    公开(公告)日:2018-11-27

    申请号:US13823414

    申请日:2012-04-11

    IPC分类号: H04N7/18 G08G1/16 G06K9/00

    摘要: A driving assistance device includes a camera, a moving object detector, a candidate reflection region detector, a predetermined position brightness detector and a cause determiner. The moving object detector and the candidate reflection region detector set a detection region for detecting, from image data captured by the camera, an existence of an adjacent vehicle in an adjacent lane. The predetermined position brightness detector detects a candidate light projecting object which projects light with brightness equal to or higher than a predetermined threshold value. The cause determiner determines whether or not there exists a candidate light projecting object which indicates the existence of the adjacent vehicle in the detection region.