摘要:
A semiconductor device (100A) according to the present invention includes: an oxide semiconductor layer (4) having a first contact region (4a) and a second contact region (4b) and a channel region (4c) located between the first contact region (4a) and the second contact region (4b); a source electrode (5) formed on the oxide semiconductor layer (4) so as to be in contact with the first contact region (4a); and a drain electrode (6) formed on the oxide semiconductor layer (4) so as to be in contact with the second contact region (4b). All side faces of the oxide semiconductor layer (4) are located over the gate electrode (2); a width of the source electrode (5) is greater than a width of the oxide semiconductor layer (4); and a width of the drain electrode (6) is greater than a width of the oxide semiconductor layer (4).
摘要:
The circuit board (1) of the present invention includes a plurality of transistor elements provided on a single insulating substrate (2) for respective pixels that are two-dimensionally arranged or respective pixels in a group of a predetermined number of the pixels. At least one of the plurality of transistor elements is an oxide TFT (10) having a channel layer (11) formed by an oxide semiconductor, and at least another of the plurality of transistor elements is an a-Si TFT (20) having a channel layer (21) formed by, for example, an amorphous silicon semiconductor. Each of the oxide TFT (10) and the a-Si TFT (20) is a bottom-gate transistor.
摘要:
The circuit board (1) of the present invention includes a plurality of transistor elements provided on a single insulating substrate (2) for respective pixels that are two-dimensionally arranged or respective pixels in a group of a predetermined number of the pixels. At least one of the plurality of transistor elements is an oxide TFT (10) having a channel layer (11) formed by an oxide semiconductor, and at least another of the plurality of transistor elements is an a-Si TFT (20) having a channel layer (21) formed by, for example, an amorphous silicon semiconductor. Each of the oxide TFT (10) and the a-Si TFT (20) is a bottom-gate transistor.
摘要:
A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.
摘要:
A circuit board (1) includes a plurality of transistor elements on an insulating substrate (2). At least one of the plurality of transistor elements is an oxide TFT (10) including, as a channel layer (11), an oxide semiconductor. At least one of the plurality of transistor elements is an a-SiTFT (20) (i) being different from the oxide TFT (10) in functions as circuit components and (ii) including, as a channel layer (21), an amorphous silicon semiconductor. The oxide TFT (10) is a top gate transistor, and the a-SiTFT (20) is a bottom gate transistor. This provides: a configuration that can (a) enhance the performance of the circuit board equipped with the TFTs differing in their respective functions as circuit components and (b) reduce the area necessary for mounting the TFTs; and a method for producing the circuit board.
摘要:
A source and drain electrode layer (3s/3d) of an oxide TFT element (3) is formed by a first conductive layer. A gate electrode (3g) of the oxide TFT element (3) and a gate electrode (5g) of an a-Si TFT element (5) are formed by a single conductive layer, that is, a second conductive layer. A source and drain electrode layer (5s/5d) of the a-Si TFT element (5) is formed by a third conductive layer. The third conductive layer is formed above the second conductive layer in a thickness direction in which each conductive layer is stacked on an insulating substrate (2). Further, the first conductive layer is formed below the second conductive layer in the thickness direction. Therefore, it is possible to provide a circuit board that can have an improved degree of integration of transistor elements formed on the insulating substrate.
摘要:
A touch panel includes an insulating substrate, a transparent touch electrode provided on the insulating substrate, and a frame portion connected to a periphery of the touch electrode. The touch panel detects a touched position on the touch electrode based on an electric signal through the frame portion. The frame portion is provided between the insulating substrate and the touch electrode.
摘要:
A touch panel includes an insulating substrate, a transparent touch electrode provided on the insulating substrate, and a frame portion connected to a periphery of the touch electrode. The touch panel detects a touched position on the touch electrode based on an electric signal through the frame portion. The frame portion is provided between the insulating substrate and the touch electrode.
摘要:
A driving assistance device includes a camera, a moving object detector, a candidate reflection region detector, a predetermined position brightness detector and a cause determiner. The moving object detector and the candidate reflection region detector set a detection region for detecting, from image data captured by the camera, an existence of an adjacent vehicle in an adjacent lane. The predetermined position brightness detector detects a candidate light projecting object which projects light with brightness equal to or higher than a predetermined threshold value. The cause determiner determines whether or not there exists a candidate light projecting object which indicates the existence of the adjacent vehicle in the detection region.
摘要:
An image forming apparatus includes an image bearer, a transfer member, and a power source. The image bearer includes a plurality of layers. The transfer member forms a transfer nip between the image bearer and the transfer member. The power source outputs a transfer bias to transfer a toner image from the image bearer onto a recording sheet in the transfer nip. The transfer bias alternates between a transfer-side bias that causes the toner image to move from the image bearer to the recording sheet, and an opposite-side bias different from the transfer-side bias. A duty ratio of a time period, during which the opposite-side bias is output, relative to one cycle of a waveform, is greater than 50%.