公开(公告)号：US20170092851A1

公开(公告)日：2017-03-30

申请号：US15244344

申请日：2016-08-23

申请人： Shinhee HAN ,  Kiseok SUH ,  KyungTae NAM ,  Woojin KIM ,  Kwangil SHIN ,  Minkyoung JOO ,  Gwanhyeob KOH

发明人： Shinhee HAN ,  Kiseok SUH ,  KyungTae NAM ,  Woojin KIM ,  Kwangil SHIN ,  Minkyoung JOO ,  Gwanhyeob KOH

IPC分类号： H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.

公开(公告)号：US20170092852A1

公开(公告)日：2017-03-30

申请号：US15246519

申请日：2016-08-24

申请人： Myoungsu SON ,  Kiseok SUH ,  GWANHYEOB KOH ,  KyungTae NAM ,  YOONJONG SONG

发明人： Myoungsu SON ,  Kiseok SUH ,  GWANHYEOB KOH ,  KyungTae NAM ,  YOONJONG SONG

IPC分类号： H01L43/12 ,  H01L43/02 ,  H01L27/22

CPC分类号： H01L43/12 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： A magnetic memory device and a method for manufacturing the magnetic memory device are disclosed. The method includes forming a first interlayer insulating layer on a substrate, forming a first conductive pattern that penetrates the first interlayer insulating layer, forming a mold insulating layer that includes first and second mold insulating layers on the first interlayer insulating layer, forming a second conductive pattern that penetrates the first and second mold insulating layers and the first interlayer insulating layer, and forming a magnetic tunnel junction pattern on the second conductive pattern. The first mold insulating layer is in contact with the first conductive pattern, and the second mold insulating layer is disposed on the first mold insulating layer.

公开(公告)号：US20150228321A1

公开(公告)日：2015-08-13

申请号：US14526489

申请日：2014-10-28

申请人： KILHO LEE ,  SANGYONG KIM ,  WOOJIN KIM ,  KyungTae NAM

发明人： KILHO LEE ,  SANGYONG KIM ,  WOOJIN KIM ,  KyungTae NAM

IPC分类号： G11C11/16

CPC分类号： G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/221

摘要： A magnetic memory device is provided. The magnetic memory device includes a plurality of variable resistance devices connected to a word line, and a plurality of bit lines, each of which provides an electrical pathway between a corresponding one of the variable resistance devices and a read and write circuit. Each of the variable resistance devices includes a free layer and a pinned layer spaced apart from each other and having a tunnel barrier interposed therebetween, an assistant layer spaced apart from the tunnel barrier and having the free layer interposed therebetween, and an exchange coupling layer arranged between the free layer and the assistant layer. The exchange coupling layer has an electric polarization, which results from its ferroelectric property, and having a direction that can be changed by a voltage applied to the corresponding one of the bit lines.

摘要翻译： 提供磁存储器件。 磁存储器件包括连接到字线的多个可变电阻器件和多个位线，每个位线提供相应的一个可变电阻器件与读写电路之间的电路径。 每个可变电阻装置包括自由层和钉扎层，彼此间隔开并具有插入其间的隧道势垒，辅助层与隧道势垒间隔开并且具有插入其间的自由层，并且布置有交换耦合层 在自由层和辅助层之间。 交换耦合层具有由其铁电性质产生的电极化，并且具有可以通过施加到相应的一个位线的电压而改变的方向。

公开(公告)号：US20160163369A1

公开(公告)日：2016-06-09

申请号：US14957550

申请日：2015-12-02

申请人： Kilho LEE ,  KyungTae NAM ,  Sung Chul LEE

发明人： Kilho LEE ,  KyungTae NAM ,  Sung Chul LEE

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

CPC分类号： G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： Provided is a semiconductor device including magnetic tunnel junctions, which are spaced apart from each other on a substrate, and each of which includes a free magnetic pattern, a first pinned magnetic pattern, and a tunnel barrier pattern therebetween. The semiconductor device further includes a separation structure interposed between the magnetic tunnel junctions. The separation structure includes a second pinned magnetic pattern and a first insulating pattern stacked to each other.

摘要翻译： 提供了一种半导体器件，其包括在衬底上彼此间隔开的磁性隧道结，并且其中每一个包括自由磁性图案，第一钉扎磁性图案和它们之间的隧道屏障图案。 半导体器件还包括插入在磁性隧道结之间的分离结构。 分离结构包括彼此堆叠的第二钉扎磁性图案和第一绝缘图案。

公开(公告)号：US20110193051A1

公开(公告)日：2011-08-11

申请号：US12963148

申请日：2010-12-08

申请人： KyungTae NAM ,  Ingyu Baek

发明人： KyungTae NAM ,  Ingyu Baek

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L45/1233 ,  H01L45/085 ,  H01L45/141 ,  H01L45/146

摘要： Provided are resistance memory devices and methods of forming the same. The resistance memory devices include a first electrode and a second electrode on a substrate, a transition metal oxide layer interposed between the first electrode and the second electrode, an electrolyte layer interposed between the second electrode and the transition metal oxide layer, and conductive bridges having one end that is electrically connected to the second electrode on the electrolyte.

摘要翻译： 提供电阻记忆装置及其形成方法。 电阻存储器件包括衬底上的第一电极和第二电极，介于第一电极和第二电极之间的过渡金属氧化物层，介于第二电极和过渡金属氧化物层之间的电解质层，以及具有 一端与电解质上的第二电极电连接。