-
公开(公告)号:US20170092851A1
公开(公告)日:2017-03-30
申请号:US15244344
申请日:2016-08-23
申请人: Shinhee HAN , Kiseok SUH , KyungTae NAM , Woojin KIM , Kwangil SHIN , Minkyoung JOO , Gwanhyeob KOH
发明人: Shinhee HAN , Kiseok SUH , KyungTae NAM , Woojin KIM , Kwangil SHIN , Minkyoung JOO , Gwanhyeob KOH
CPC分类号: H01L43/12 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/226 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要: A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.
-
公开(公告)号:US20170092850A1
公开(公告)日:2017-03-30
申请号:US15203008
申请日:2016-07-06
申请人: Wonjun LEE , lnseak HWANG , Yongsun KO , Changkyu LEE , Jinhye BAE , Hyunchul SHIN , Shinhee HAN , Yoonsung HAN
发明人: Wonjun LEE , lnseak HWANG , Yongsun KO , Changkyu LEE , Jinhye BAE , Hyunchul SHIN , Shinhee HAN , Yoonsung HAN
摘要: Manufacturing a MRAM device may include removing etch residues from a magnetic tunnel junction (MTJ) pattern in the presence of an atmosphere. The removing may include applying a cleaning solution to one or more surfaces of the MTJ pattern. Manufacturing the MRAM device may include removing an oxide layer based on sputter etching of the MTJ pattern. The etch residues may be removed such that the oxide layer is formed. Removing the etch residues may include applying a cleaning solution to the MTJ pattern. The etch residues may be removed in the presence of an atmosphere. The MTJ pattern may be formed based on patterning an MTJ layer in a vacuum state such that the etch residues are formed on a surface of the MTJ pattern.
-