摘要:
In a vehicle pop-up hood apparatus in which a rod is extended and a hood is pushed up by the operation of an actuator at a time of collision with a collision body, collision energy is absorbed with high efficiency when a collision load of a predetermined value or greater is input to an area near a hood pushed up position.Actuator (18) operates such that rod (20) moves in an axial direction toward a hood upper side, pushes up a rear edge side of hood rocker (12) and holds it at that position and, in that state, when a collision load of a predetermined value or greater acts from a hood upper side to near the pushed up position of the hood, push portion (54) slides along pushed up surface (38) of hinge arm (30) towards a vehicle rear side, and rod (20) is made to bend in conjunction therewith.
摘要:
In a vehicle pop-up hood apparatus in which a rod is extended and a hood is pushed up by the operation of an actuator at a time of collision with a collision body, collision energy is absorbed with high efficiency when a collision load of a predetermined value or greater is input to an area near a hood pushed up position.Actuator (18) operates such that rod (20) moves in an axial direction toward a hood upper side, pushes up a rear edge side of hood rocker (12) and holds it at that position and, in that state, when a collision load of a predetermined value or greater acts from a hood upper side to near the pushed up position of the hood, push portion (54) slides along pushed up surface (38) of hinge arm (30) towards a vehicle rear side, and rod (20) is made to bend in conjunction therewith.
摘要:
The present invention provides a hood impact absorbing apparatus capable of further mitigating an impact that a collision body receives from a hood than ever, wherein a push-up rod pushes up the rear end of a hood at the time of a collision of a vehicle, and when a collision body is battered against the top surface of the hood in this state, the rear end of the hood descends and the distal end of the push-up rod slidingly contacts and moves a rear-side flat portion and an arm intermediate curved portion in the rear end of the hood, and herein, a slide contact angle (θ) in the arm intermediate curved portion is larger than a slide contact angle (θ) in the rear end of the rear-side flat portion, thereby, during a process in which the rear end of the hood descends, peaks at which an absorbing amount of impact energy becomes large can be provided at least twice, and as a result, the impact can be mitigated further than ever.
摘要:
The present invention provides a hood impact absorbing apparatus capable of further mitigating an impact that a collision body receives from a hood than ever, wherein a push-up rod pushes up the rear end of a hood at the time of a collision of a vehicle, and when a collision body is battered against the top surface of the hood in this state, the rear end of the hood descends and the distal end of the push-up rod slidingly contacts and moves a rear-side flat portion and an arm intermediate curved portion in the rear end of the hood, and herein, a slide contact angle (θ) in the arm intermediate curved portion is larger than a slide contact angle (θ) in the rear end of the rear-side flat portion, thereby, during a process in which the rear end of the hood descends, peaks at which an absorbing amount of impact energy becomes large can be provided at least twice, and as a result, the impact can be mitigated further than ever.
摘要:
According to one embodiment, a semiconductor device, including a substrate, a stacked layer body provided above the substrate, the stacked layer body alternately stacking an insulator and an electrode film one on another, silicon pillars contained with fluorine, the silicon pillar penetrating through and provided in the stacked layer body, a tunnel insulator provided on a surface of the silicon pillar facing to the stacked layer body, a charge storage layer provided on a surface of the tunnel insulator facing to the stacked layer body, a block insulator provided on a surface of the charge storage layer facing to the stacked layer body, the block insulator being in contact with the electrode film, and an embedded portion provided in the silicon pillars.
摘要:
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, memory cell array portion, single-crystal semiconductor layer, and circuit portion. The memory cell array portion is formed on the semiconductor substrate, and includes memory cells. The semiconductor layer is formed on the memory cell array portion, and connected to the semiconductor substrate by being formed in a hole extending through the memory cell array portion.The circuit portion is formed on the semiconductor layer. The Ge concentration in the lower portion of the semiconductor layer is higher than that in the upper portion of the semiconductor layer.
摘要:
According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film.
摘要:
According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film.
摘要:
A semiconductor device includes a first pMISFET region having an Si channel, a second pMISFET region having an Si channel and an nMISFET region having an Si channel. First SiGe layers which apply first compression strain to the Si channel are embedded and formed in the first pMISFET region to sandwich the Si channel thereof and second SiGe layers which apply second compression strain different from the first compression strain to the Si channel are embedded and formed in the second pMISFET region to sandwich the Si channel thereof.
摘要:
A motorized retractor which includes a spool with a webbing wound therearound, a reversible motor, a forward and a reverse driving force transmission mechanisms. The forward and the reverse driving force transmission mechanisms are provided between the spool and an output shaft of the motor, respectively. The forward driving force transmission mechanism reduces forward rotation of the output shaft by a predetermined reduction ratio and transmits this rotation to the spool for rotating the spool in a winding direction. The reverse driving force transmission mechanism reduces reverse direction rotation of the output shaft by a reduction ratio which is lower than the predetermined reduction ratio of the forward driving force transmission mechanism, and transmits this rotation to the spool for rotating the spool in the winding direction. The forward and the reverse driving force transmission mechanisms both block transmission to the output shaft of rotations generated at the spool side.