公开(公告)号：US20090263943A1

公开(公告)日：2009-10-22

申请号：US12492276

申请日：2009-06-26

申请人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L21/44

CPC分类号： H01L21/823814 ,  C23C14/16 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/31608 ,  H01L21/76229 ,  H01L21/76828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

摘要翻译： 在MOSFET的栅电极，源极和漏极的表面上形成具有低电阻和小的漏电流的Co硅化物层，通过使用高纯度Co靶溅射沉积在晶片的主平面上的Co膜， Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

公开(公告)号：US06693001B2

公开(公告)日：2004-02-17

申请号：US09380735

申请日：2000-02-04

申请人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L218238

CPC分类号： H01L21/28518 ,  H01L21/2855 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETs by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

摘要翻译： 通过使用高纯度Co靶通过溅射将沉积在晶片的主平面上的Co膜进行硅化，在MOSFET的栅极，源极和漏极的表面上形成具有低电阻和小的结漏电流的Co硅化物层 Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

公开(公告)号：US07553766B2

公开(公告)日：2009-06-30

申请号：US11950152

申请日：2007-12-04

申请人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L21/44

CPC分类号： H01L21/823814 ,  C23C14/16 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/31608 ,  H01L21/76229 ,  H01L21/76828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

摘要翻译： 在MOSFET的栅电极，源极和漏极的表面上形成具有低电阻和小的漏电流的Co硅化物层，通过使用高纯度Co靶溅射沉积在晶片的主平面上的Co膜， Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

公开(公告)号：US06858484B2

公开(公告)日：2005-02-22

申请号：US10721902

申请日：2003-11-26

申请人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8238 ,  H01L23/532 ,  H01L29/45 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L21/823814 ,  C23C14/16 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/31608 ,  H01L21/76229 ,  H01L21/76828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETs by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

摘要翻译： 通过使用高纯度Co靶通过溅射将沉积在晶片的主平面上的Co膜进行硅化，在MOSFET的栅极，源极和漏极的表面上形成具有低电阻和小的结漏电流的Co硅化物层 Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

公开(公告)号：US08034715B2

公开(公告)日：2011-10-11

申请号：US12492276

申请日：2009-06-26

申请人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L21/44 ,  H01L21/8238

CPC分类号： H01L21/823814 ,  C23C14/16 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/31608 ,  H01L21/76229 ,  H01L21/76828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

摘要翻译： 在MOSFET的栅电极，源极和漏极的表面上形成具有低电阻和小的漏电流的Co硅化物层，通过使用高纯度Co靶溅射沉积在晶片的主平面上的Co膜， Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

公开(公告)号：US20070184603A1

公开(公告)日：2007-08-09

申请号：US11783187

申请日：2007-04-06

申请人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L21/8238

CPC分类号： H01L21/823814 ,  C23C14/16 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/31608 ,  H01L21/76229 ,  H01L21/76828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

摘要翻译： 在MOSFET的栅电极，源极和漏极的表面上形成具有低电阻和小的漏电流的Co硅化物层，通过使用高纯度Co靶溅射沉积在晶片的主平面上的Co膜， Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

公开(公告)号：US20050118805A1

公开(公告)日：2005-06-02

申请号：US11006702

申请日：2004-12-08

申请人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8238 ,  H01L23/532 ,  H01L29/45 ,  H01L29/49 ,  H01L29/78 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/823814 ,  C23C14/16 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/31608 ,  H01L21/76229 ,  H01L21/76828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETs by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

公开(公告)号：US20080090358A1

公开(公告)日：2008-04-17

申请号：US11950152

申请日：2007-12-04

申请人： Shinji NISHIHARA ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji NISHIHARA ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L21/8236

CPC分类号： H01L21/823814 ,  C23C14/16 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/31608 ,  H01L21/76229 ,  H01L21/76828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

摘要翻译： 在MOSFET的栅电极，源极和漏极的表面上形成具有低电阻和小的漏电流的Co硅化物层，通过使用高纯度Co靶溅射沉积在晶片的主平面上的Co膜， Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

公开(公告)号：US07314830B2

公开(公告)日：2008-01-01

申请号：US11783187

申请日：2007-04-06

申请人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L21/44

CPC分类号： H01L21/823814 ,  C23C14/16 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/31608 ,  H01L21/76229 ,  H01L21/76828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

摘要翻译： 在MOSFET的栅电极，源极和漏极的表面上形成具有低电阻和小的漏电流的Co硅化物层，通过使用高纯度Co靶溅射沉积在晶片的主平面上的Co膜， Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

公开(公告)号：US07214577B2

公开(公告)日：2007-05-08

申请号：US11006702

申请日：2004-12-08

申请人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L21/8238 ,  H01L21/4763 ,  H01L21/00 ,  H01L21/84 ,  H01L21/44

CPC分类号： H01L21/823814 ,  C23C14/16 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/31608 ,  H01L21/76229 ,  H01L21/76828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETs by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

摘要翻译： 通过使用高纯度Co靶通过溅射将沉积在晶片的主平面上的Co膜进行硅化，在MOSFET的栅极，源极和漏极的表面上形成具有低电阻和小的结漏电流的Co硅化物层 Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。