公开(公告)号：US20080310012A1

公开(公告)日：2008-12-18

申请号：US12112373

申请日：2008-04-30

Applicant: Shinsuke TANAKA ,  Ken MORITO ,  Susumu YAMAZAKI

Inventor： Shinsuke TANAKA ,  Ken MORITO ,  Susumu YAMAZAKI

IPC: H01S3/00

CPC classification number: H01S5/5009 ,  B82Y20/00 ,  G02B6/1228 ,  G02B2006/12078 ,  G02B2006/12121 ,  G02B2006/12128 ,  H01S5/026 ,  H01S5/1014 ,  H01S5/2275 ,  H01S5/32366 ,  H01S5/3404 ,  H01S5/34366

Abstract: A polarization-independent SOA having an InP substrate used as a semiconductor substrate, and an active layer taking an MQW structure formed of a barrier layer made of GaInAs with tensile strain applied thereto and a well layer made of GaInNAs with no strain applied thereto alternately laminated in a plurality of layers, here, four layers of the well layer and five layers of the barrier layer are alternately laminated, is proposed.

Abstract translation: 具有用作半导体衬底的InP衬底的偏振无关SOA，以及施加由施加了拉伸应变的GaInAs制成的阻挡层形成的MQW结构的有源层和由其施加无应变的GaInNA制成的阱层交替层叠 在多层中，提出了四层阱层和五层阻挡层交替层叠。

公开(公告)号：US20110164310A1

公开(公告)日：2011-07-07

申请号：US13048345

申请日：2011-03-15

Applicant: Shinsuke TANAKA ,  Ken MORITO

Inventor： Shinsuke TANAKA ,  Ken MORITO

IPC: H01S5/024 ,  H01S5/06

CPC classification number: H01S5/0612 ,  H01S5/0261 ,  H01S5/0617 ,  H01S5/0683 ,  H01S5/50

Abstract: An optical amplification control apparatus is formed from a semiconductor optical amplifier, a temperature adjustment unit adjusting the temperature of the semiconductor optical amplifier, and an optical gain control unit adjusting the temperature of the semiconductor optical amplifier by controlling the temperature adjustment unit, and varying an optical gain of the semiconductor optical amplifier. Thus, a pattern effect is suppressed even if the output light intensity (the intensity of amplified light) is increased.

Abstract translation: 光放大控制装置由半导体光放大器，调节半导体光放大器的温度的温度调节单元和通过控制温度调节单元来调节半导体光放大器的温度的光增益控制单元形成， 半导体光放大器的光增益。 因此，即使输出光强度（放大光的强度）增加，图案效果也被抑制。

公开(公告)号：US20090122393A1

公开(公告)日：2009-05-14

申请号：US12191418

申请日：2008-08-14

Applicant: Ken MORITO ,  Susumu YAMAZAKI ,  Shinsuke TANAKA

Inventor： Ken MORITO ,  Susumu YAMAZAKI ,  Shinsuke TANAKA

IPC: H01S3/06

CPC classification number: H01S5/1082 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/32366 ,  H01S5/50 ,  H01S5/5009 ,  H01S2301/02

Abstract: A polarization-independent SOA is provided which uses an InP substrate (11) as a semiconductor substrate and uses GaInNAs having introduced tensile strain as an active layer (14). With this configuration, the polarization independence is achieved by introducing the tensile strain, and high saturation optical output power is realized by reducing the film thickness of the active layer (14) as well as the gain peak wavelength is increased by reducing the band gap of the active layer (14) through use of GaInNAs made by adding nitrogen (N) to GaInAs as a material of the active layer (14) so as to achieve high gain especially in C-band and L-band even when band filling exits at the time of injecting a high current into the active layer (14).

Abstract translation: 提供了使用InP衬底（11）作为半导体衬底并且使用具有引入的拉伸应变的GaInNA作为有源层（14）的偏振无关的SOA。 通过这种结构，通过引入拉伸应变来实现极化独立性，并且通过降低有源层（14）的膜厚度来实现高饱和光输出功率，并且通过降低有源层（14）的带隙来增加增益峰值波长 通过使用通过将氮（N）添加到GaInAs作为有源层（14）的材料而制成的GaInNA，以便即使在带填充离开时也可以实现高增益，特别是在C带和L带中，有源层（14） 将高电流注入有源层（14）的时间。

公开(公告)号：US20080308788A1

公开(公告)日：2008-12-18

申请号：US12047806

申请日：2008-03-13

Applicant: Hiroji EBE ,  Kenichi KAWAGUCHI ,  Ken MORITO ,  Yasuhiko ARAKAWA

Inventor： Hiroji EBE ,  Kenichi KAWAGUCHI ,  Ken MORITO ,  Yasuhiko ARAKAWA

IPC: H01L29/06

CPC classification number: H01S5/341 ,  B82Y20/00 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3412 ,  H01S5/5009 ,  H01S2301/04 ,  Y10S438/962

Abstract: A quantum dot semiconductor device includes an active layer having a plurality of quantum dot layers each including a composite quantum dot formed by stacking a plurality of quantum dots and a side barrier layer formed in contact with a side face of the composite quantum dot. The stack number of the quantum dots and the magnitude of strain of the side barrier layer from which each of the quantum dot layers is formed are set so that a gain spectrum of the active layer has a flat gain bandwidth corresponding to a shift amount of the gain spectrum within a desired operation temperature range.

Abstract translation: 量子点半导体器件包括具有多个量子点层的有源层，每个量子点层包括通过堆叠多个量子点形成的复合量子点和与复合量子点的侧面接触形成的侧面阻挡层。 每个量子点层形成的量子点的堆叠数量和侧面阻挡层的应变幅度被设定为使得有源层的增益谱具有对应于 增益谱在所需的工作温度范围内。