Abstract:
A horizontal transfer section is formed on a P-type semiconductor substrate. A floating diffusion layer for receiving signal charges from the horizontal transfer section and a detector MOSFET for detecting any potential change of the floating diffusion layer are further formed. This detector MOSFET has a gate electrode in which an opening is formed. The gate electrode extends toward the floating diffusion layer and the opening is positioned above the floating diffusion layer. As a result, a solid-state image sensor constituted as above, can reduce the area of the floating diffusion layer and can detect signal charges at high sensitivity.
Abstract:
An accumulator with a bellows dividing the accumulator into a pressure sealing chamber and a fluid flow-in chamber. A fluid inlet introduces fluid into the flow-in chamber. A bellows cap is attached to a movable end of the bellows and contains a throttling mechanism and chamber room for dampening sounds generated by pulsating waves. The throttling mechanism is positioned to oppose the fluid inlet.
Abstract:
The present invention provides a solid-state camera device which can improve both the shading caused by the eclipse of the incident light and the shading cased by the rim darkening. The present solid-state camera device comprises a plurality of light-receiving parts 1 arranged at a constant interval on a substrate, and a plurality of light-focusing parts 2 disposed corresponding to each of the light-receiving parts on the substrate surface so that the incident light is focused on the light-receiving parts. Further, the position of each of the light-focusing parts is shifted gradually larger toward the center of the camera region O based on the corresponding light-receiving parts and the size along the substrate surface of each of the light-focusing parts 2, W1′, . . . , Wn−1′, Wn′, becomes gradually larger, as the location of the light-focusing parts is getting closer to the peripheral camera region 22 from the middle of the camera region 21 in front of the exit pupil on the substrate in the direction along the substrate surface.
Abstract:
In a semiconductor device, in order to protect an interior of the device, protective circuits are provided. The protective circuits include a first circuit connected between the first terminal and a negative potential line, a second circuit connected between the first terminal and a ground potential line, and a third circuit connected between the ground potential line and a second terminal. The first circuit consists of a MOS transistor having a drain connected with the first terminal, a source connected with the negative potential line, and a gate connected with the first terminal or the negative potential line. The second circuit consists of a MOS transistor having a drain connected with the first terminal, a source connected with the ground potential line, and a gate connected with the first terminal or the ground potential line. The third circuit consists of a MOS transistor having a drain connected with the second terminal, a source connected with the ground potential line, and a gate connected with the second terminal or the ground potential line.
Abstract:
There is provided a solid state imaging device having high-sensitivity, low-noise characteristics by reducing electrostatic capacity relating to interconnection. The solid state imaging device includes a photoelectric conversion section, a transfer section, a floating diffusion layer for receiving signal charges from the transfer section, and an output transistor having a gate electrode connected to the floating diffusion layer via an interconnection. A source and a drain of the output transistor are provided commonly within a flat p-type well of relatively thin concentration in which the photoelectric conversion section, the transfer section, and the floating diffusion layer are also provided. It becomes possible to reduce an interconnection capacity, a gate-drain capacity, and a gate-channel capacity, to increase gain of a source follower circuit, to relax electric fields in the vicinity of the drain, and to prevent electric charges from inflow and outflow from substrate, without any increase in the fabrication process. As a result, a high-sensitivity, low-noise solid state imaging device can be offered.
Abstract:
The present invention provides a solid-state camera device which can improve both the shading caused by the eclipse of the incident light and the shading cased by the rim darkening. The present solid-state camera device comprises a plurality of light-receiving parts 1 arranged at a constant interval on a substrate, and a plurality of light-focusing parts 2 disposed corresponding to each of the light-receiving parts on the substrate surface so that the incident light is focused on the light-receiving parts. Further, the position of each of the light-focusing parts is shifted gradually larger toward the center of the camera region O based on the corresponding light-receiving parts and the size along the substrate surface of each of the light-focusing parts 2, W1′, . . . , Wn−1′, Wn′, becomes gradually larger, as the location of the light-focusing parts is getting closer to the peripheral camera region 22 from the middle of the camera region 21 in front of the exit pupil on the substrate in the direction along the substrate surface.