公开(公告)号：US08730382B2

公开(公告)日：2014-05-20

申请号：US12995913

申请日：2009-06-04

申请人： Chiaki Aoyama ,  Shoji Kawahito

发明人： Chiaki Aoyama ,  Shoji Kawahito

IPC分类号： H04N5/335 ,  G02B7/40

CPC分类号： H01L27/14603 ,  H04N5/2354 ,  H04N5/335 ,  H04N5/37452

摘要： Charge generated in a photodiode is properly split for difference processing. An imaging element is constituted by a semiconductor such that a charge accumulation portion is connected to a light receiving portion using a buried photodiode and charge is split from the charge accumulation portion by a plurality of gates and is accumulated. An imaging device includes a control device performing control so as to accumulate charge that is generated by a photoelectric conversion at an exposure cycle synchronous with the light emission of a light source. The exposure cycle includes a first period for receiving reflection light from a subject illuminated by light from the light source and a second period for receiving light from the subject illuminated by an environmental light not including the light from the light source. The imaging device includes a charge accumulation region connected to each photoelectric conversion region, a first charge storage region for receiving charge generated in the photoelectric conversion regions during the first period via the charge accumulation portion, and a second charge storage region for receiving charge generated in the photoelectric conversion regions during the second period via the charge accumulation portion.

摘要翻译： 在光电二极管中产生的电荷被适当地分开以进行差分处理。 成像元件由半导体构成，使得电荷累积部分使用掩埋光电二极管连接到光接收部分，并且电荷通过多个栅极从电荷累积部分分离，并被累积。 成像装置包括控制装置，其进行控制，以便以与光源的发光同步的曝光周期累积由光电转换产生的电荷。 曝光周期包括用于接收来自被来自光源的光照射的被摄体的反射光的第一周期和用于接收来自被摄体的光的第二周期，所述第二周期由不包括来自光源的光的环境光照射。 成像装置包括连接到每个光电转换区域的电荷累积区域，用于经由电荷累积部分在第一周期期间接收在光电转换区域中产生的电荷的第一电荷存储区域和用于接收 经由电荷累积部分在第二周期期间的光电转换区域。

公开(公告)号：US20120301150A1

公开(公告)日：2012-11-29

申请号：US13577112

申请日：2011-02-04

申请人： Shoji Kawahito

发明人： Shoji Kawahito

IPC分类号： H04B10/10

CPC分类号： H01L27/14609 ,  H01L21/28282 ,  H01L27/1443 ,  H01L27/14656 ,  H04N5/3745

摘要： A optical-information acquisition element encompasses a semiconductor layer (31) of a p-type, a surface-buried region (33) of a n-type buried in the semiconductor layer (31) so as to implement a photodiode with the semiconductor layer (31), a charge-accumulation region (36) of the n-type buried in the surface-buried region (33), configured to accumulate charges generated by the photodiode, a barrier-creating region of the p-type buried in the surface-buried region (33) so as to sandwich the surface-buried region (33) with the semiconductor layer (31), configured to create a potential barrier, and a charge-exhaust region (34) of the n-type buried in the semiconductor layer (31), configured to store and to extract excess charges which surmount the potential barrier and flow out from the charge-accumulation region (36). The changes of potential level of the charge-accumulation region (36) are extracted as signals, after receiving optical-communication signals. An optical-information-acquisition element array and a hybrid solid-state imaging device are also provided.

摘要翻译： 光信息采集元件包括埋置在半导体层（31）中的p型半导体层（31），埋入n型的表面埋入区（33），以便实现具有半导体层 （31），掩埋在所述表面埋藏区域（33）中的n型电荷蓄积区域（36），其被配置为积聚由所述光电二极管产生的电荷，所述p型掩埋产生区域 表面埋藏区域（33），以与被形成势垒的半导体层（31）夹着表面埋入区域（33），以及埋入n型的充电排出区域（34） 所述半导体层（31）被配置为存储和提取超过所述势垒并从所述电荷累积区域（36）流出的过量电荷。 在接收到光通信信号之后，电荷累积区域（36）的电位电平的变化被提取为信号。 还提供了光学信息采集元件阵列和混合固态成像装置。

公开(公告)号：US20120104235A1

公开(公告)日：2012-05-03

申请号：US13344090

申请日：2012-01-05

申请人： Hirofumi Sumi ,  Nobuo Nakamura ,  Shoji Kawahito

发明人： Hirofumi Sumi ,  Nobuo Nakamura ,  Shoji Kawahito

IPC分类号： H01L27/146

CPC分类号： H04N5/3575 ,  H04N5/243 ,  H04N5/3696 ,  H04N5/37455 ,  H04N5/37457

摘要： A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.

摘要翻译： 包括像素信号控制器的固态成像装置的前置放大器（列区域单元）。 像素信号控制器对于每个垂直信号线，由像素信号放大器的输出侧的像素信号检测器独立地检测每个像素信号的电平，并且根据图像信号放大器独立地设置增益 信号的电平。 在固态成像装置的后续阶段，提供了模数（A / D）转换器和信号延伸单元。 A / D转换器对像素信号进行数字化，参照来自像素信号检测器的分类信号，通过设置到像素信号放大器的增益来校正数字化像素信号，使得一个屏幕的信号的动态范围 延长了

公开(公告)号：US20110298079A1

公开(公告)日：2011-12-08

申请号：US13142141

申请日：2009-12-25

申请人： Shoji Kawahito

发明人： Shoji Kawahito

IPC分类号： H01L31/02

CPC分类号： H01L27/14603 ,  H01L27/14612 ,  H01L27/14689 ,  H04N5/374

摘要： A semiconductor element includes: a p-type semiconductor region; an n-type light-receiving surface buried region buried in the semiconductor region; an n-type charge accumulation region buried in the semiconductor region, continuously to the light-receiving surface buried region, establishing a deeper potential well depth than the light-receiving surface buried region; a charge read-out region configured to read out the charges accumulated in the charge accumulation region; an exhaust-drain region buried in the semiconductor region, configured to extract the charges from the light-receiving surface buried region; a first potential controller configured to extract the charges from the light-receiving surface buried region to the exhaust-drain region; and a second potential controller configured to transfer the charges from the charge accumulation region to the charge read-out region.

摘要翻译： 半导体元件包括：p型半导体区域; 埋在半导体区域中的n型光接收表面掩埋区域; 埋置在半导体区域中的n型电荷累积区域，连续地连接到受光面掩埋区域，形成比受光面埋藏区域更深的势阱深度; 电荷读出区域，被配置为读出在电荷累积区域中累积的电荷; 埋置在所述半导体区域中的废气排放区域，被配置为从所述受光面掩埋区域提取电荷; 第一电位控制器，被配置为从所述光接收表面掩埋区域提取到所述排气区域的电荷; 以及第二电位控制器，被配置为将电荷从电荷累积区域转移到电荷读出区域。

公开(公告)号：US20110157354A1

公开(公告)日：2011-06-30

申请号：US13056697

申请日：2009-07-30

申请人： Shoji Kawahito

发明人： Shoji Kawahito

IPC分类号： H04N7/18

CPC分类号： H01L27/14603 ,  G01S7/4863 ,  G01S17/10 ,  G01S17/89 ,  H01L31/02024 ,  H04N5/341 ,  H04N13/254

摘要： A distance image sensor capable of enlarging the distance measurement range without reducing the distance resolution is provided. A radiation source 13 provides first to fifth pulse trains PT1 to PT5 which are irradiated to the object as radiation pulses in the first to fifth frames arranged in order on a time axis. In each of the frames, imaging times TPU1 to TPU5 are prescribed at points of predetermined time ΔTPD from the start point of each frame, also the pulses PT1 to PT5 are shifted respectively by shift amounts different from each other from the start point of the first to fifth frames. A pixel array 23 generates element image signals SE1 to SE5 each of which has distance information of an object in distance ranges different from each other using imaging windows A and B in each of five frames. A processing unit 17 generates an image signal SIMAGE by combining the element image signals. Since five times-of-flight measurement are used, the width of the radiation pulse does not have to be increased to obtain distance information of the object in a wide distance range, and the distance resolution is not reduced.

摘要翻译： 提供了能够在不减小距离分辨率的情况下扩大距离测量范围的距离图像传感器。 辐射源13提供照射到物体的第一至第五脉冲串PT1至PT5，作为在时间轴上按顺序布置的第一至第五帧中的辐射脉冲。 在每个帧中，从每帧开始点的预定时间＆Dgr; TPD的点处规定成像时间TPU1〜TPU5，脉冲PT1〜PT5也分别移动与起始点不同的移动量 第一到第五帧。 像素阵列23使用五帧中的每一帧中的成像窗口A和B，生成各自具有彼此不同的距离范围的对象的距离信息的元素图像信号SE1〜SE5。 处理单元17通过组合元素图像信号来生成图像信号SIMAGE。 由于使用五次飞行测量，所以不必增加辐射脉冲的宽度，以获得物体在较宽距离范围内的距离信息，并且距离分辨率不降低。

公开(公告)号：US07843029B2

公开(公告)日：2010-11-30

申请号：US12295443

申请日：2007-03-30

申请人： Shoji Kawahito ,  Takashi Watanabe

发明人： Shoji Kawahito ,  Takashi Watanabe

IPC分类号： H01L31/10 ,  H01L27/148

CPC分类号： H01L31/02024 ,  G01C3/02 ,  G01C3/08 ,  G01S7/4816 ,  G01S17/89 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H04N5/3575

摘要： A semiconductor range-finding element and a solid-state imaging device, which can provide a smaller dark current and a removal of reset noise. With n-type buried charge-generation region, buried charge-transfer regions, buried charge read-out regions buried in a surface of p-type semiconductor layer, an insulating film covering these regions, transfer gate electrodes arranged on the insulating film for transferring the signal charges to the buried charge-transfer regions, read-out gate electrodes arranged on the insulating film for transferring the signal charges to the buried charge read-out regions, after receiving a light pulse by the buried charge-generation region, in the semiconductor layer just under the buried charge-generation region, an optical signal is converted into signal charges, and a distance from a target sample is determined by a distribution ratio of the signal charges accumulated in the buried charge-transfer regions.

摘要翻译： 半导体测距元件和固态成像器件，其可以提供更小的暗电流和去除复位噪声。 对于n型掩埋电荷产生区域，掩埋电荷转移区域，埋藏在p型半导体层表面的掩埋电荷读出区域，覆盖这些区域的绝缘膜，设置在绝缘膜上的传输栅电极用于传输 信号对掩埋的电荷转移区域充电，在接收到埋入电荷产生区域的光脉冲之后，布置在绝缘膜上的用于将信号电荷转移到掩埋电荷读出区域的读出栅电极 半导体层正好在掩埋电荷产生区域之下，光信号被转换成信号电荷，并且通过在掩埋电荷转移区域中累积的信号电荷的分配比来确定与目标样品的距离。

公开(公告)号：US07830436B2

公开(公告)日：2010-11-09

申请号：US10997511

申请日：2004-11-24

申请人： Hirofumi Sumi ,  Nobuo Nakamura ,  Shoji Kawahito

发明人： Hirofumi Sumi ,  Nobuo Nakamura ,  Shoji Kawahito

IPC分类号： H04N5/335 ,  H04N5/235

CPC分类号： H04N5/3575 ,  H04N5/243 ,  H04N5/3696 ,  H04N5/37455 ,  H04N5/37457

摘要： A pre-amplifier (column region unit) of a solid-state imaging device includes a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.

摘要翻译： 固态成像装置的前置放大器（列区域单元）包括像素信号控制器。 像素信号控制器对于每个垂直信号线，由像素信号放大器的输出侧的像素信号检测器独立地检测每个像素信号的电平，并且根据图像信号放大器独立地设置增益 信号的电平。 在固态成像装置的后续阶段，提供了模数（A / D）转换器和信号延伸单元。 A / D转换器对像素信号进行数字化，参照来自像素信号检测器的分类信号，通过设置到像素信号放大器的增益来校正数字化像素信号，使得一个屏幕的信号的动态范围 延长了

公开(公告)号：US20090243900A1

公开(公告)日：2009-10-01

申请号：US12303909

申请日：2007-06-08

申请人： Shoji Kawahito

发明人： Shoji Kawahito

IPC分类号： H03M1/06 ,  H03M1/38

CPC分类号： H03M1/144 ,  H03M1/0695 ,  H03M1/146

摘要： A conversion operation B is performed with respect to a sample value R in an A/D conversion stage 101 to generate a conversion result D3, and a sampling operation A is performed with respect to this conversion result D3 in an A/D conversion stage 103. The conversion operation B is performed with respect to a sample value in an A/D conversion stage 105 to generate a conversion result D4, and the sampling operation A is performed with respect to the conversion result D4 in an A/D conversion stage 107. The conversion operation B is performed with respect to a sample value in an A/D conversion stage 107 to generate a conversion result D5, and the sampling operation A is performed with respect to this conversion result D5 in an A/D conversion stage 101. The conversion operation B is performed with respect to a sample value in the A/D conversion stage 103 to generate a conversion result D6, and the sampling operation A is performed with respect to the conversion result D6 in the A/D conversion stage 105.

摘要翻译： 对A / D转换级101中的采样值R执行转换操作B以产生转换结果D3，并且在A / D转换级103中对该转换结果D3执行采样操作A. 对于A / D转换级105中的采样值执行转换操作B以产生转换结果D4，并且相对于A / D转换级107中的转换结果D4执行采样操作A. 对A / D转换级107中的采样值执行转换操作B以产生转换结果D5，并且在A / D转换级101中对该转换结果D5执行采样操作A 对A / D转换级103中的采样值执行转换操作B以产生转换结果D6，并且针对A / D转换阶段中的转换结果D6执行采样操作A 在舞台105上。

公开(公告)号：US20090237545A1

公开(公告)日：2009-09-24

申请号：US12477739

申请日：2009-06-03

申请人： Nobuo Nakamura ,  Shoji Kawahito ,  Hiroki Sato ,  Mizuho Higashi

发明人： Nobuo Nakamura ,  Shoji Kawahito ,  Hiroki Sato ,  Mizuho Higashi

IPC分类号： H04N5/335

CPC分类号： H04N5/378 ,  H01L27/14609 ,  H04N5/243 ,  H04N5/355 ,  H04N5/374 ,  H04N5/37455 ,  H04N5/37457

摘要： An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.

摘要翻译： 图像传感器在逐像素的基础上控制像素信号的增益，并且在保持S / N比在有利水平的同时延伸动态范围。 图像传感器中的列单元独立地检测每个像素信号的电平，并独立地设置信号电平的增益。 光电转换区域单元具有用于每个像素列的垂直信号线二维布置的像素，以输出每个像素信号。 列单元位于垂直信号线的输出侧。 每个像素列的列单元具有像素信号电平检测电路，可编程增益控制，采样和保持（S / H）电路。 根据检测到的像素信号电平的结果进行增益校正。

公开(公告)号：US20090134396A1

公开(公告)日：2009-05-28

申请号：US12065156

申请日：2006-08-30

申请人： Shoji Kawahito ,  Mitsuru Homma

发明人： Shoji Kawahito ,  Mitsuru Homma

IPC分类号： H01L31/112 ,  H01L31/06 ,  H01L31/0368

CPC分类号： H01L27/14603 ,  G01S7/483 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： To transfer signal charges generated by a semiconductor photoelectric conversion element in opposite directions, the center line of a first transfer gate electrode and that of a second transfer gate electrodes are arranged on the same straight line, and a U-shaped first exhausting gate electrode and a second exhausting gate electrode are arranged to oppose to each other. The first exhausting gate electrode exhausts background charges generated by a background light in the charge generation region, and the second exhausting gate electrode exhausts background charges generated by the background light in the charge generation region. The background charges exhausted by the first exhausting gate electrode are received by a first exhausting drain region and the background charges exhausted by the second exhausting gate electrode are received by a first exhausting drain region.

摘要翻译： 为了将由半导体光电转换元件产生的信号电荷沿相反的方向转移，第一传输栅电极的中心线和第二传输栅电极的中心线被布置在相同的直线上，并且U形的第一排气栅电极和 第二排气栅电极被布置成彼此相对。 第一排气栅电极排出由电荷产生区域中的背景光产生的背景电荷，并且第二排气栅电极排出由电荷产生区域中的背景光产生的背景电荷。 由第一排气栅电极耗尽的背景电荷由第一排气漏极区域接收，由第二排气栅电极排出的背景电荷由第一排气区域接收。