摘要:
A substrate detector device comprises a boat or chuck for holding substrates, a light emitting section having a plurality of light emitting elements, arranged side by side, for respectively applying light beams to the substrates, a light receiving section, facing the light emitting section and having a plurality of light receiving elements, for receiving light beams passed through the substrates, the light receiving elements arranged side by side so as not face the light emitting elements, a polarization filter provided on optical axes of the respective optical beams incident on the light receiving elements, a memory for storing, as reference data, an amount of light received by a receiving element which has been measured in advance when a light beam is applied to a substrate in a state where no other substrate is present on either side of the substrate, and controller for discriminating the presence, the number, and the state of arrangement of the substrates on the holding means based on the reference data and measured data based on the amount of light received by the light receiving elements after a light beam scattered by the substrate to be detected and a light beam wraparound substrates adjacent thereto are removed by the polarization filter.
摘要:
A power supply device includes an inductor controlled by switching to be charged or discharged such that a DC input voltage is boosted and a capacitor which smoothes the boosted voltage to generate a DC output voltage. Specifically, the power supply device further includes a transistor connected between the inductor and the capacitor to carry out a rectification function; an output voltage determination circuit which refers to the DC input voltage and the DC output voltage to determine the level of these voltages; and a current control circuit which controls a current flowing through the transistor such that the current has a predetermined value when the output voltage determination circuit determines that the DC output voltage is lower than the DC input voltage.
摘要:
A semiconductor integrated circuit (10A) which converts an input supply voltage (Vi=2.5 to 4 V) applied to an input terminal (P1) into a first output voltage (Vo1=5 V) and outputs the first output voltage from an output terminal (P2), includes a first control circuit (17) which supplies a switching unit (11, 12, 13, 14) interposed between the input terminal (P1) and the output terminal (P2) with a switching signal so as to bring a feedback voltage (Vf1) based on an output voltage of the output terminal (P2) close to a target value; and an external setting terminal (P3) which sets the feedback voltage (Vf1) to a prescribed potential regardless of voltage of the output terminal (P2).
摘要:
A developing process of the photo-resist coated on the wafer is performed, cleaning the developing solution by a cleaning solution then transferring the wafer to the electron beam radiation unit before the rinsing solution and the resist dries out. The radiation chamber is replaced with a helium gas to form a predetermined degree of vacuum or atmospheric pressure. An electron beam is radiated and the front face of the wafer is heated for a predetermined period of time. In this method, deformation and breaking of a pattern caused by drying after the development can be prevented.
摘要:
A processing apparatus comprises a plurality of processing sets, each set including a transport path extending vertically, a plurality of processing sections which are provided around the transport path and each have a plurality of processing units laid one on top of another vertically, which each perform a specific process on objects, and a main transport mechanism which moves along the transport path, loads the objects on and unloads the objects from each processing unit in the plurality of processing sections, and an inter-set transport mechanism for transporting objects between the adjacent processing sets.
摘要:
A resist processing method in which a substrate is successively transferred by an arm mechanism into a plurality of process units for successively processing the substrate, comprising the steps of (a) loading a substrate having a reference region which is aligned as desired relative to the process unit and the arm mechanism in a horizontal plane, into the process unit, the substrate being held substantially horizontal by a spin chuck surrounded by a drain cup, (b) rotating the spin chuck holding the substrate and supplying a process solution onto the substrate rotated together with the spin chuck, (c) stopping the supply of the process solution and also stopping rotation of the substrate, (d) detecting a position of the reference region in the horizontal plane of the substrate held on the spin chuck, (e) rotating the substrate together with the spin chuck based on the position detected in the step (d) to permit the reference region of the substrate to be aligned with an initial position in the step (a) of loading the substrate into the process unit, and (f) unloading the substrate out of the process unit when the substrate is rotated to a position at which the reference region of the substrate is aligned with the initial position.
摘要:
The present invention relates to a processing chamber that processes an object to be processed in an atmosphere of a processing gas. The processing chamber is provided with a mounting stand having a holder mechanism that holds the object to be processed within the processing chamber. The mounting stand is connected to a rotational mechanism and is free to rotate, and the holder mechanism on the mounting stand is also provided with a separate, independent rotational mechanism whereby the front surface and rear surface of the object to be processed can be rotated (inverted) relative to the mounting stand. Thus the present invention provides a processing method and apparatus therefor in which the front surface and rear surface of the object to be processed can be processed under the same conditions, without having to change the atmospheric status of the object to be processed.
摘要:
A multilayer piezoelectric device including a body having internal electrode layers and piezoelectric ceramic layers alternately stacked. The internal electrode layers contain Cu as a major component, the piezoelectric ceramic layers contain a compound oxide represented by Pb(Ti, Zr)O3 as a major component, and a metal oxide (Nb2O5, Sb2O5, Ta2O5, or WO3) containing Nb, Sb, Ta, or W, which is at least one of a pentavalent metal element and a hexavalent metal element, is incorporated in the piezoelectric ceramic layers such that the concentration of the metal oxide decreases with distance from the internal electrode layers. Thereby, even in a case where internal electrodes contain Cu as a major component, it is possible to provide a multilayer piezoelectric device which can be obtained by low-temperature firing while ensuring a sufficient piezoelectric constant.
摘要翻译:一种多层压电器件,包括具有交替堆叠的内部电极层和压电陶瓷层的主体。 内部电极层含有Cu作为主要成分,压电陶瓷层含有以Pb(Ti,Zr)O 3为主成分的复合氧化物,含有Nb的金属氧化物(Nb 2 O 5,Sb 2 O 5,Ta 2 O 5,WO 3) 作为五价金属元素和六价金属元素中的至少一种的Sb,Ta或W被并入压电陶瓷层中,使得金属氧化物的浓度随着与内部电极层的距离而减小。 因此,即使在内部电极含有Cu作为主要成分的情况下,也可以提供能够通过低温烧制获得的多层压电器件,同时确保足够的压电常数。
摘要:
A power supply device includes an inductor controlled by switching to be charged or discharged such that a DC input voltage is boosted and a capacitor which smoothes the boosted voltage to generate a DC output voltage. Specifically, the power supply device further includes a transistor connected between the inductor and the capacitor to carry out a rectification function; an output voltage determination circuit which refers to the DC input voltage and the DC output voltage to determine the level of these voltages; and a current control circuit which controls a current flowing through the transistor such that the current has a predetermined value when the output voltage determination circuit determines that the DC output voltage is lower than the DC input voltage.
摘要:
A piezoelectric device is formed by simultaneously firing a piezoelectric ceramic mainly composed of a perovskite complex oxide represented by general formula ABO3 and electrodes mainly composed of copper. The piezoelectric ceramic is represented by Pbα−aMea[(MII1/3MV(2+b)/3)zTixZr1−x−z]O3 (wherein Me represents a metal element, MII is an acceptor element which is a divalent metal element, and MV is a donor element which is a pentavalent metal element), and satisfies equations 0.05≦z≦0.40, 0
摘要翻译:通过同时焙烧主要由通式ABO 3 3表示的钙钛矿复合氧化物和主要由铜构成的电极的压电陶瓷,形成压电元件。 压电陶瓷由Pb(OH)2表示, (2 + b)/ 3 i> sub> Ti x 1 x x 1 x z z] O 3(其中Me表示金属元素,M II是作为二价金属元素的受体元素,MⅤ是供体 元素,其为五价金属元素),并且满足等式0.05 <= z <= 0.40,0