公开(公告)号：US06846612B2

公开(公告)日：2005-01-25

申请号：US10062790

申请日：2002-02-01

申请人： Shreeram V. Deshpande

发明人： Shreeram V. Deshpande

IPC分类号： C08F8/14 ,  C08G59/14 ,  C08G59/32 ,  C08G59/42 ,  C08G59/62 ,  C08G63/68 ,  C08G63/91 ,  C08G65/329 ,  C09D133/02 ,  C09D163/00 ,  C09D167/00 ,  C09D171/02 ,  G03F7/09 ,  G03C1/492 ,  C08L63/00

CPC分类号： C08G59/32 ,  C08F8/14 ,  C08G59/1438 ,  C08G59/42 ,  C08G59/625 ,  C08G63/68 ,  C08G63/91 ,  C08G65/329 ,  C09D133/02 ,  C09D163/00 ,  C09D167/00 ,  C09D171/02 ,  G03F7/091 ,  Y10S430/106

摘要： New polymers and new anti-reflective compositions containing such polymers are provided. The compositions comprise a polymer (e.g., epoxy cresol novolac resins) bonded with a chromophore (4-hydroxybenzoic acid, trimellitic anhydride). The inventive compositions can be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

摘要翻译： 提供了新的聚合物和含有这种聚合物的新的抗反射组合物。 组合物包含与发色团（4-羟基苯甲酸，偏苯三酸酐）结合的聚合物（例如环氧甲酚酚醛清漆树脂）。 本发明的组合物可以施加到基底（例如，硅晶片）以形成具有高蚀刻速率的抗反射涂层，其在随后的光致抗蚀剂曝光和显影期间最小化或防止反射。

公开(公告)号：US06962769B2

公开(公告)日：2005-11-08

申请号：US10660667

申请日：2003-09-11

申请人： Xie Shao ,  Jim D. Meador ,  Mandar Bhave ,  Vandana Krishnamurthy ,  Kelly A. Nowak ,  Michelle Fowler ,  Shreeram V. Deshpande

发明人： Xie Shao ,  Jim D. Meador ,  Mandar Bhave ,  Vandana Krishnamurthy ,  Kelly A. Nowak ,  Michelle Fowler ,  Shreeram V. Deshpande

IPC分类号： G03F7/11 ,  B32B7/02 ,  C08J3/24 ,  C09D5/00 ,  C09D7/12 ,  C09D105/00 ,  C09D133/00 ,  C09D161/20 ,  C09D163/00 ,  C09D167/00 ,  C09D171/00 ,  C09D179/08 ,  C09D201/00 ,  G03F7/004 ,  G03F7/09 ,  H01L21/027 ,  G03C1/492

CPC分类号： C08J3/241 ,  G03F7/091 ,  Y10S430/151

摘要： Anti-reflective compositions and methods of using those compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In one embodiment, the compositions comprise less than about 0.3% by weight of a strong acid. In another embodiment, the weight ratio of strong acid to weak acid in the composition is from about 0:100 to about 25:75. Examples of preferred weak acid compounds include phenolic compounds (e.g., Bisphenol S, Bisphenol A, α-cyano-4-hydroxycinnamic acid), carboxylic acids (e.g., acetic acid), phosphoric acid, and cyano compounds. The polymer and other ingredients are preferably physically mixed in a solvent system. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature).

摘要翻译： 提供了抗反射组合物和使用这些组合物形成电路的方法。 组合物包含溶解或分散在溶剂体系中的聚合物。 在一个实施方案中，组合物包含小于约0.3重量％的强酸。 在另一个实施方案中，组合物中强酸与弱酸的重量比为约0:100至约25:75。 优选的弱酸化合物的实例包括酚类化合物（例如双酚S，双酚A，α-氰基-4-羟基肉桂酸），羧酸（例如乙酸），磷酸和氰基化合物。 聚合物和其它成分优选在溶剂体系中物理混合。 所得的组合物是旋转碗相容的（即，它们在微光刻工艺的烘烤阶段之前或在室温下储存期间不交联）。

公开(公告)号：USRE41128E1

公开(公告)日：2010-02-16

申请号：US11657983

申请日：2007-01-25

申请人： Shreeram V. Deshpande

发明人： Shreeram V. Deshpande

IPC分类号： G03C1/825 ,  G03C1/835 ,  G03F7/09 ,  G03F7/11

CPC分类号： C08G59/32 ,  C08F8/14 ,  C08G59/1438 ,  C08G59/42 ,  C08G59/625 ,  C08G63/68 ,  C08G63/91 ,  C08G65/329 ,  C09D133/02 ,  C09D163/00 ,  C09D167/00 ,  C09D171/02 ,  G03F7/091 ,  Y10S430/106

摘要： New polymers and new anti-reflective compositions containing such polymers are provided. The compositions comprise a polymer (e.g., epoxy cresol novolac resins) bonded with a chromophore (4-hydroxybenzoic acid, trimellitic anhydride). The inventive compositions can be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

摘要翻译： 提供了新的聚合物和含有这种聚合物的新的抗反射组合物。 组合物包含与发色团（4-羟基苯甲酸，偏苯三酸酐）结合的聚合物（例如环氧甲酚酚醛清漆树脂）。 本发明的组合物可以施加到基底（例如，硅晶片）以形成具有高蚀刻速率的抗反射涂层，其在随后的光致抗蚀剂曝光和显影期间最小化或防止反射。

公开(公告)号：US07132216B2

公开(公告)日：2006-11-07

申请号：US10689482

申请日：2003-10-20

申请人： Xie Shao ,  Robert Cox ,  Shreeram V. Deshpande ,  Tony D. Flaim ,  Rama Puligadda

发明人： Xie Shao ,  Robert Cox ,  Shreeram V. Deshpande ,  Tony D. Flaim ,  Rama Puligadda

IPC分类号： G03C1/825 ,  G03C1/83 ,  G03C1/815 ,  G03C1/73

CPC分类号： G03F7/091 ,  Y10S430/106 ,  Y10S430/108

摘要： An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as bottom anti-reflective coatings (BARC) and contact or via hole fill materials. The preferred non-aromatic compounds of the invention are conjugated aliphatic and alicyclic compounds which greatly enhance the plasma etch rate of the composition. Furthermore, the light attenuating compounds are useful for absorbing light at shorter wavelengths. In one embodiment, the inventive compounds can be polymerized so as to serve as both the polymer binder of the composition as well as the light absorbing constituent.

公开(公告)号：USRE40920E1

公开(公告)日：2009-09-22

申请号：US11799470

申请日：2007-05-01

申请人： Gu Xu ,  Jimmy D. Meador ,  Mandar R. Bhave ,  Shreeram V. Deshpande ,  Kelly A. Nowak

发明人： Gu Xu ,  Jimmy D. Meador ,  Mandar R. Bhave ,  Shreeram V. Deshpande ,  Kelly A. Nowak

IPC分类号： C08L29/06

CPC分类号： H01L21/76808 ,  G02B1/111 ,  G03F7/091 ,  Y10S430/136 ,  Y10S430/151

摘要： New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

摘要翻译： 提供了具有改善的流动性能的新的抗反射或填充组合物。 组合物除了苯乙烯 - 烯丙醇聚合物之外还包含苯乙烯 - 烯丙醇聚合物，优选至少一种其它聚合物（例如，纤维素聚合物）。 本发明的组合物可用于在双镶嵌工艺中的后续蚀刻期间保护接触或通孔免于降解。 本发明的组合物还可以施加到基底（例如，硅晶片）以形成具有高蚀刻速率的抗反射涂层，其在随后的光致抗蚀剂曝光和显影期间最小化或防止反射。

公开(公告)号：US06894104B2

公开(公告)日：2005-05-17

申请号：US10154338

申请日：2002-05-23

申请人： Gu Xu ,  Jimmy D. Meador ,  Mandar R. Bhave ,  Shreeram V. Deshpande ,  Kelly A. Nowak

发明人： Gu Xu ,  Jimmy D. Meador ,  Mandar R. Bhave ,  Shreeram V. Deshpande ,  Kelly A. Nowak

IPC分类号： C09D101/00 ,  C09D129/08 ,  G02B1/11 ,  G03F7/09 ,  H01L21/768 ,  C08L29/06

CPC分类号： H01L21/76808 ,  G02B1/111 ,  G03F7/091 ,  Y10S430/136 ,  Y10S430/151

摘要： New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

摘要翻译： 提供了具有改善的流动性能的新的抗反射或填充组合物。 组合物除了苯乙烯 - 烯丙醇聚合物之外还包含苯乙烯 - 烯丙醇聚合物，优选至少一种其它聚合物（例如，纤维素聚合物）。 本发明的组合物可用于在双镶嵌工艺中的后续蚀刻期间保护接触或通孔免于降解。 本发明的组合物还可以施加到基底（例如，硅晶片）以形成具有高蚀刻速率的抗反射涂层，其在随后的光致抗蚀剂曝光和显影期间最小化或防止反射。

公开(公告)号：US06555287B1

公开(公告)日：2003-04-29

申请号：US09684999

申请日：2000-10-10

申请人： Shreeram V. Deshpande

发明人： Shreeram V. Deshpande

IPC分类号： G03F7004

CPC分类号： C07D319/12 ,  C07C255/37 ,  G03F7/091

摘要： An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is difunctional and can be directly incorporated (either physically or chemically) into photolithographic compositions such as anti-reflective coatings (ARC) and contact or via hole fill materials. The preferred light attenuating compound comprises functional groups electronically isolated from the light absorbing moieties of the compound. As a result, the spectral properties of the compound are not negatively affected when the functional groups form bonds with other compounds during polymerization or crosslinking.

摘要翻译： 提供了一种用于微型器件生产的改进的光衰减化合物。 广义上，光衰减化合物是双官能的，并且可以直接并入（物理或化学上）到诸如抗反射涂层（ARC）和接触或通孔填充材料的光刻组合物中。 优选的光衰减化合物包括从化合物的光吸收部分电子分离的官能团。 结果，当在聚合或交联期间官能团与其它化合物形成键时，化合物的光谱性质不会受到负面影响。