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公开(公告)号：US4792461A
公开(公告)日：1988-12-20
申请号：US64392
申请日：1987-06-22
申请人： Yaichiro Watakabe , Shuichi Matsuda
发明人： Yaichiro Watakabe , Shuichi Matsuda
IPC分类号： G03F1/00 , G03F1/54 , H01L21/027 , B05D3/06
CPC分类号： G03F1/54 , Y10S148/019 , Y10S148/147 , Y10T428/2395
摘要： A silicide film of oxidized transition metal 3 formed on a transparent substrate 1 has a low reflectance and in consequence, a high resolution can be obtained and dry etching thereof can be easily done. In addition, since said silicide film 3 has good adhesion to a transparent substrate 1, file patterns therein do not peel off at the time of rinsing the mask.
摘要翻译： 形成在透明基板1上的氧化过渡金属3的硅化物膜具有低反射率，因此可以获得高分辨率，并且可以容易地进行干蚀刻。 此外，由于所述硅化物膜3对透明基板1具有良好的粘附性，因此在清洗掩模时，其中的文件图案不会剥落。
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2.发明授权
公开(公告)号：US5322748A
公开(公告)日：1994-06-21
申请号：US932187
申请日：1992-08-21
申请人： Yaichiro Watakabe , Shuichi Matsuda
发明人： Yaichiro Watakabe , Shuichi Matsuda
IPC分类号： G03F1/29 , G03F1/68 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号： G03F1/29
摘要： A photomask includes a transparent substrate, a light shielding film formed on the substrate, and a transparent film formed on the light shielding film and the substrate. The light shielding film has a bottom in contact with the substrate, a side face at an acute angle to the bottom, and an upper face in parallel with the bottom and at an obtuse angle to the side face. According to the light shielding film having such a configuration, a phase shift portion of a predetermined width and thickness can be formed accurately in the periphery of the light shielding film. The inferior influence of reflecting light with respect to the pattern resolution can be reduced if films of low reflectance are provided in the upper and lower portions of the light shielding film to improve the pattern resolution. The method of manufacturing this photomask includes the steps of patterning the light shielding film having a trapezoid configuration in which the upper base is shorter than the lower base on a transparent substrate, and forming a transparent film at a temperature of not more than 250.degree. C. on the substrate and the light shielding film. The thermal distortion in the light shielding film can be suppressed effectively by the formation of a transparent film.
摘要翻译： 光掩模包括透明基板，形成在基板上的遮光膜和形成在遮光膜和基板上的透明膜。 遮光膜具有与基板接触的底部，与底部成锐角的侧面，与底部平行的上表面，与侧面成钝角。 根据具有这种结构的遮光膜，可以在遮光膜的周围精确地形成预定宽度和厚度的相移部分。 如果在遮光膜的上部和下部设置低反射率的膜以改善图案分辨率，则可以降低反射光相对于图案分辨率的不良影响。 制造该光掩模的方法包括以下步骤：在透明基板上图案化具有梯形形状的遮光膜，其中上基板比下基板短，并且在不超过250℃的温度下形成透明膜 在基板和遮光膜上。 通过形成透明膜可以有效地抑制遮光膜的热变形。
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公开(公告)号：US4985319A
公开(公告)日：1991-01-15
申请号：US425088
申请日：1989-10-23
IPC分类号： G03F1/00 , G03F1/54 , H01L21/027
CPC分类号： G03F1/54
摘要： A photomask manufacturing process including a step of forming metal silicide film on a transparent silica glass substrate. A resist is applied onto the metal silicide film and then a patterning mask is provided by light or electron beam, followed by developing step. Exposed portions of the metal silicide film is etched away using a dry etching process.
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公开(公告)号：US4876164A
公开(公告)日：1989-10-24
申请号：US75297
申请日：1987-07-17
IPC分类号： G03F1/00 , G03F1/54 , H01L21/027
CPC分类号： G03F1/54
摘要： A photomask manufacturing process including a step of forming metal silicide film on a transparent silica glass substrate. A resist is applied onto the metal silicide film and then a patterning mask is provided by light or electron beam, followed by developing step. Exposed portions of the metal silicide film is etched away using a dry etching process.
摘要翻译： 一种光掩模制造方法，包括在透明石英玻璃基板上形成金属硅化物膜的步骤。 将抗蚀剂施加到金属硅化物膜上，然后通过光或电子束提供图案化掩模，随后显影步骤。 使用干蚀刻工艺蚀刻掉金属硅化物膜的暴露部分。
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公开(公告)号：US4717625A
公开(公告)日：1988-01-05
申请号：US837355
申请日：1986-03-06
申请人： Yaichiro Watakabe , Shuichi Matsuda
发明人： Yaichiro Watakabe , Shuichi Matsuda
CPC分类号： G03F1/54 , Y10S148/019 , Y10S148/147
摘要： A transition metal silicide film 3 is formed on a transparent substrate 1, and an oxidized transition metal silicide film 4 is formed on said transition metal silicide film 3. Dry etching can be easily applied to the transition metal silicide film 3 and the oxidized transition metal silicide film 4. Since the silicified metal films have good adhesion to the transparent substrate 1, the fine patterns can hardly be detached at the time of mask rinsing. In addition, the oxidized transition metal silicide film 4 has a low reflection factor, which prevents the lowering of the resolution.
摘要翻译： 在透明基板1上形成过渡金属硅化物膜3，在所述过渡金属硅化物膜3上形成氧化过渡金属硅化物膜4.可以容易地对过渡金属硅化物膜3和氧化过渡金属 硅化物膜4.由于硅化金属膜对透明基板1具有良好的粘合性，因此在掩模漂洗时几乎不能剥离精细图案。 此外，氧化过渡金属硅化物膜4具有低的反射系数，这防止了分辨率的降低。
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公开(公告)号：US4957834A
公开(公告)日：1990-09-18
申请号：US266706
申请日：1988-11-03
申请人： Shuichi Matsuda , Yaichiro Watakabe
发明人： Shuichi Matsuda , Yaichiro Watakabe
IPC分类号： G03F1/00 , G03F1/54 , H01L21/027 , H01L21/30
摘要： In manufacturing a photomask, a molybdenum silicide film is formed on the main surface of a quartz substrate. A resist film having a pattern is, then, formed on the molybdenum silicide film. Thereafter, the molybdenum silicide film is etched using the resist film as a mask. The etching is effected in a plasma generated in a mixed gas containing nitrogen gas in CF.sub.4 gas.
摘要翻译： 在制造光掩模时，在石英基板的主表面上形成硅化钼膜。 然后，在硅化钼膜上形成具有图案的抗蚀剂膜。 此后，使用抗蚀剂膜作为掩模来蚀刻硅化钼膜。 在CF4气体中含有氮气的混合气体中产生的等离子体中进行蚀刻。
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公开(公告)号：US4783371A
公开(公告)日：1988-11-08
申请号：US837356
申请日：1986-03-06
申请人： Yaichiro Watakabe , Shuichi Matsuda
发明人： Yaichiro Watakabe , Shuichi Matsuda
IPC分类号： G03F1/00 , G03F1/54 , H01L21/027 , B32B15/00
CPC分类号： G03F1/54 , Y10S148/019 , Y10S148/147 , Y10T428/2395
摘要： A silicide film of oxidized transition metal 3 formed on a transparent substrate 1 has a low reflectance and in consequence, a high resolution can be obtained and dry etching thereof can be easily done. In addition, since said silicide film 3 has good adhesion to a transparent substrate 1, fine patterns therein do not peel off at the time of rinsing the mask.
摘要翻译： 形成在透明基板1上的氧化过渡金属3的硅化物膜具有低反射率，因此可以获得高分辨率，并且可以容易地进行干蚀刻。 此外，由于所述硅化物膜3对透明基板1具有良好的粘附性，所以在冲洗掩模时，其中的精细图案不会剥落。
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8.发明授权Phase shift mask and manufacturing method thereof and exposure method using phase shift mask comprising a semitransparent region 失效相移掩模及其制造方法以及使用包含半透明区域的相移掩模的曝光方法
公开(公告)号：US5629114A
公开(公告)日：1997-05-13
申请号：US480371
申请日：1995-06-07
IPC分类号： G03F1/32 , G03F1/40 , G03F1/68 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F9/00
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译： 相移掩模的第二透光部分由硅化钼氮化氧化物或硅化钼氧化物，氮化铬或氧化铬或碳化铬氮化物氧化物膜形成，其将透射曝光光的相转变180° 透光率为5-40％。 在第二光透射部分的制造方法中，通过溅射法形成硅化钼氮化物氧化物膜或氮化硅氧化物膜，氧化铬膜或氧化铬膜，或碳化氮化物膜。 因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。
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9.发明授权Phase shift mask and manufacturing method thereof and exposure method using phase shift mask 失效相移掩模及其制造方法以及使用相移掩模的曝光方法
公开(公告)号：US5474864A
公开(公告)日：1995-12-12
申请号：US155370
申请日：1993-11-22
IPC分类号： G03F1/32 , G03F1/40 , G03F1/68 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F9/00
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译： 相移掩模的第二透光部分由硅化钼氮化氧化物或硅化钼氧化物，氮化铬或氧化铬或碳化铬氮化物氧化物膜形成，其将透射曝光光的相转变180° 透光率为5-40％。 在第二光透射部分的制造方法中，通过溅射法形成硅化钼氮化物氧化物膜或氮化硅氧化物膜，氧化铬膜或氧化铬膜，或碳化氮化物膜。 因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。
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10.发明授权Method of forming pattern and method of manufacturing photomask using such method 失效使用这种方法形成图案的方法和制造光掩模的方法
公开(公告)号：US5266424A
公开(公告)日：1993-11-30
申请号：US849602
申请日：1992-03-12
申请人： Takeshi Fujino , Yaichiro Watakabe
发明人： Takeshi Fujino , Yaichiro Watakabe
IPC分类号： G03F1/76 , G03F1/78 , G03F7/004 , G03F7/039 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/027 , H01L21/30 , G03F9/00
摘要： The present invention is mainly directed to provision of a method of producing a highly precise resist pattern, even when a high energy beam is used. Resist containing a base resin including a hydroxyl group, an acid generating agent irradiated with radiation for generating sulfonic acid, and a cross linking agent reacting with the hydroxyl group of the base resin by the catalytic action of the proton of the sulfonic acid thereby cross linking said base resin is applied onto a substrate. The resist is irradiated selectively with radiation, whereby the resist is divided into the exposed part and the non exposed part and the sulfonic acid is generated in the resist of the exposed part. The resist is heated to a first temperature so as to cross link the irradiated part of the resist. The resist is heated to a second temperature and exposed in an atmosphere of a silylating agent, and the surface of the exposed part of the resist is silylated. The resist is dry-developed with oxygen plasma.
摘要翻译： 本发明主要涉及提供一种制造高精度抗蚀剂图案的方法，即使使用高能量束也是如此。 含有羟基的基础树脂，用辐射产生磺酸的酸产生剂的抗蚀剂和通过磺酸的质子的催化作用与基础树脂的羟基反应的交联剂进行交联 所述基础树脂施加到基底上。 用辐射选择性地照射抗蚀剂，由此将抗蚀剂分成暴露部分和非暴露部分，并且在暴露部分的抗蚀剂中产生磺酸。 将抗蚀剂加热至第一温度，以使抗蚀剂的照射部分交联。 将抗蚀剂加热至第二温度并在甲硅烷基化剂的气氛中暴露，并将抗蚀剂的暴露部分的表面甲硅烷基化。 抗氧化剂用氧等离子体干发展。
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