公开(公告)号：US4792461A

公开(公告)日：1988-12-20

申请号：US64392

申请日：1987-06-22

申请人： Yaichiro Watakabe ,  Shuichi Matsuda

发明人： Yaichiro Watakabe ,  Shuichi Matsuda

IPC分类号： G03F1/00 ,  G03F1/54 ,  H01L21/027 ,  B05D3/06

CPC分类号： G03F1/54 ,  Y10S148/019 ,  Y10S148/147 ,  Y10T428/2395

摘要： A silicide film of oxidized transition metal 3 formed on a transparent substrate 1 has a low reflectance and in consequence, a high resolution can be obtained and dry etching thereof can be easily done. In addition, since said silicide film 3 has good adhesion to a transparent substrate 1, file patterns therein do not peel off at the time of rinsing the mask.

摘要翻译： 形成在透明基板1上的氧化过渡金属3的硅化物膜具有低反射率，因此可以获得高分辨率，并且可以容易地进行干蚀刻。 此外，由于所述硅化物膜3对透明基板1具有良好的粘附性，因此在清洗掩模时，其中的文件图案不会剥落。

公开(公告)号：US4876164A

公开(公告)日：1989-10-24

申请号：US75297

申请日：1987-07-17

申请人： Yaichiro Watakabe ,  Tatsuo Okamoto ,  Shuichi Matsuda

发明人： Yaichiro Watakabe ,  Tatsuo Okamoto ,  Shuichi Matsuda

IPC分类号： G03F1/00 ,  G03F1/54 ,  H01L21/027

CPC分类号： G03F1/54

摘要： A photomask manufacturing process including a step of forming metal silicide film on a transparent silica glass substrate. A resist is applied onto the metal silicide film and then a patterning mask is provided by light or electron beam, followed by developing step. Exposed portions of the metal silicide film is etched away using a dry etching process.

摘要翻译： 一种光掩模制造方法，包括在透明石英玻璃基板上形成金属硅化物膜的步骤。 将抗蚀剂施加到金属硅化物膜上，然后通过光或电子束提供图案化掩模，随后显影步骤。 使用干蚀刻工艺蚀刻掉金属硅化物膜的暴露部分。

公开(公告)号：US4717625A

公开(公告)日：1988-01-05

申请号：US837355

申请日：1986-03-06

申请人： Yaichiro Watakabe ,  Shuichi Matsuda

发明人： Yaichiro Watakabe ,  Shuichi Matsuda

IPC分类号： G03F1/00 ,  G03F1/58 ,  H01L21/027 ,  B32B15/00 ,  B32B17/06 ,  G03F9/00

CPC分类号： G03F1/54 ,  Y10S148/019 ,  Y10S148/147

摘要： A transition metal silicide film 3 is formed on a transparent substrate 1, and an oxidized transition metal silicide film 4 is formed on said transition metal silicide film 3. Dry etching can be easily applied to the transition metal silicide film 3 and the oxidized transition metal silicide film 4. Since the silicified metal films have good adhesion to the transparent substrate 1, the fine patterns can hardly be detached at the time of mask rinsing. In addition, the oxidized transition metal silicide film 4 has a low reflection factor, which prevents the lowering of the resolution.

摘要翻译： 在透明基板1上形成过渡金属硅化物膜3，在所述过渡金属硅化物膜3上形成氧化过渡金属硅化物膜4.可以容易地对过渡金属硅化物膜3和氧化过渡金属 硅化物膜4.由于硅化金属膜对透明基板1具有良好的粘合性，因此在掩模漂洗时几乎不能剥离精细图案。 此外，氧化过渡金属硅化物膜4具有低的反射系数，这防止了分辨率的降低。

公开(公告)号：US4957834A

公开(公告)日：1990-09-18

申请号：US266706

申请日：1988-11-03

申请人： Shuichi Matsuda ,  Yaichiro Watakabe

发明人： Shuichi Matsuda ,  Yaichiro Watakabe

IPC分类号： G03F1/00 ,  G03F1/54 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F1/54 ,  G03F1/80

摘要： In manufacturing a photomask, a molybdenum silicide film is formed on the main surface of a quartz substrate. A resist film having a pattern is, then, formed on the molybdenum silicide film. Thereafter, the molybdenum silicide film is etched using the resist film as a mask. The etching is effected in a plasma generated in a mixed gas containing nitrogen gas in CF.sub.4 gas.

摘要翻译： 在制造光掩模时，在石英基板的主表面上形成硅化钼膜。 然后，在硅化钼膜上形成具有图案的抗蚀剂膜。 此后，使用抗蚀剂膜作为掩模来蚀刻硅化钼膜。 在CF4气体中含有氮气的混合气体中产生的等离子体中进行蚀刻。

公开(公告)号：US4783371A

公开(公告)日：1988-11-08

申请号：US837356

申请日：1986-03-06

申请人： Yaichiro Watakabe ,  Shuichi Matsuda

发明人： Yaichiro Watakabe ,  Shuichi Matsuda

IPC分类号： G03F1/00 ,  G03F1/54 ,  H01L21/027 ,  B32B15/00

CPC分类号： G03F1/54 ,  Y10S148/019 ,  Y10S148/147 ,  Y10T428/2395

摘要： A silicide film of oxidized transition metal 3 formed on a transparent substrate 1 has a low reflectance and in consequence, a high resolution can be obtained and dry etching thereof can be easily done. In addition, since said silicide film 3 has good adhesion to a transparent substrate 1, fine patterns therein do not peel off at the time of rinsing the mask.

摘要翻译： 形成在透明基板1上的氧化过渡金属3的硅化物膜具有低反射率，因此可以获得高分辨率，并且可以容易地进行干蚀刻。 此外，由于所述硅化物膜3对透明基板1具有良好的粘附性，所以在冲洗掩模时，其中的精细图案不会剥落。

公开(公告)号：US5322748A

公开(公告)日：1994-06-21

申请号：US932187

申请日：1992-08-21

申请人： Yaichiro Watakabe ,  Shuichi Matsuda

发明人： Yaichiro Watakabe ,  Shuichi Matsuda

IPC分类号： G03F1/29 ,  G03F1/68 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

CPC分类号： G03F1/29

摘要： A photomask includes a transparent substrate, a light shielding film formed on the substrate, and a transparent film formed on the light shielding film and the substrate. The light shielding film has a bottom in contact with the substrate, a side face at an acute angle to the bottom, and an upper face in parallel with the bottom and at an obtuse angle to the side face. According to the light shielding film having such a configuration, a phase shift portion of a predetermined width and thickness can be formed accurately in the periphery of the light shielding film. The inferior influence of reflecting light with respect to the pattern resolution can be reduced if films of low reflectance are provided in the upper and lower portions of the light shielding film to improve the pattern resolution. The method of manufacturing this photomask includes the steps of patterning the light shielding film having a trapezoid configuration in which the upper base is shorter than the lower base on a transparent substrate, and forming a transparent film at a temperature of not more than 250.degree. C. on the substrate and the light shielding film. The thermal distortion in the light shielding film can be suppressed effectively by the formation of a transparent film.

摘要翻译： 光掩模包括透明基板，形成在基板上的遮光膜和形成在遮光膜和基板上的透明膜。 遮光膜具有与基板接触的底部，与底部成锐角的侧面，与底部平行的上表面，与侧面成钝角。 根据具有这种结构的遮光膜，可以在遮光膜的周围精确地形成预定宽度和厚度的相移部分。 如果在遮光膜的上部和下部设置低反射率的膜以改善图案分辨率，则可以降低反射光相对于图案分辨率的不良影响。 制造该光掩模的方法包括以下步骤：在透明基板上图案化具有梯形形状的遮光膜，其中上基板比下基板短，并且在不超过250℃的温度下形成透明膜 在基板和遮光膜上。 通过形成透明膜可以有效地抑制遮光膜的热变形。

公开(公告)号：US4985319A

公开(公告)日：1991-01-15

申请号：US425088

申请日：1989-10-23

申请人： Yaichiro Watakabe ,  Tatsuo Okamoto ,  Shuichi Matsuda

发明人： Yaichiro Watakabe ,  Tatsuo Okamoto ,  Shuichi Matsuda

IPC分类号： G03F1/00 ,  G03F1/54 ,  H01L21/027

CPC分类号： G03F1/54

摘要： A photomask manufacturing process including a step of forming metal silicide film on a transparent silica glass substrate. A resist is applied onto the metal silicide film and then a patterning mask is provided by light or electron beam, followed by developing step. Exposed portions of the metal silicide film is etched away using a dry etching process.

公开(公告)号：US06794750B2

公开(公告)日：2004-09-21

申请号：US09222524

申请日：1998-12-28

申请人： Shuichi Matsuda

发明人： Shuichi Matsuda

IPC分类号： H01L2343

CPC分类号： H01L23/4985 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/49827 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/00

摘要： A semiconductor device equipped with a TAB (tape automated bonding) tape. A desired pattern of wiring is formed on one surface of the TAB tape and a semiconductor chip having two or more chip electrodes is disposed on the other surface of the TAB tape. The wiring and the chip electrodes are electrically interconnected via bumps that are formed in through-holes of the wiring in conforming relationship with the chip electrodes. This prevents fault connection between the chip electrodes and the bumps.

摘要翻译： 一种配有TAB（胶带自动贴合）胶带的半导体器件。 在TAB带的一个表面上形成所需的布线图案，并且在TAB带的另一个表面上设置具有两个或更多个芯片电极的半导体芯片。 布线和芯片电极通过与芯片电极成一致的关系形成在布线的通孔中的凸块电连接。 这防止了芯片电极和凸块之间的故障连接。

公开(公告)号：US5759873A

公开(公告)日：1998-06-02

申请号：US733207

申请日：1996-10-17

申请人： Keiichiro Kata ,  Shuichi Matsuda ,  Hironori Ono

发明人： Keiichiro Kata ,  Shuichi Matsuda ,  Hironori Ono

IPC分类号： H01L21/48 ,  H01L21/60 ,  H01L23/544 ,  H01L21/44 ,  H01L21/50

CPC分类号： H01L24/86 ,  H01L21/4803 ,  H01L23/544 ,  H01L2223/54473 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T29/41

摘要： In a method of manufacturing a chip size semiconductor device comprising a semiconductor chip and a carrier tape including an insulating film and wiring patterns formed on one surface of the insulating film, the method comprises the steps of bonding the semiconductor chip and the carrier tape by the use of an adhesive film having a predetermined size corresponding to an adhesive area of the semiconductor chip. The step of bonding comprises the substeps of cutting away the adhesive film by punching from an adhesive film tape held above the semiconductor chip mounted on a table and subsequently setting the adhesive film on the adhesive area by moving the adhesive film downwardly.

摘要翻译： 在制造包括半导体芯片的芯片尺寸半导体器件的方法和包括绝缘膜的载带和形成在绝缘膜的一个表面上的布线图案的方法中，所述方法包括以下步骤：将半导体芯片和载带 使用具有对应于半导体芯片的粘合区域的预定尺寸的粘合剂膜。 接合步骤包括通过从保持在安装在工作台上的半导体芯片上方的粘合薄膜带上冲下来切割粘合剂膜的子步骤，然后通过向下移动粘合剂膜将粘合剂膜设置在粘合剂区域上。

公开(公告)号：US5757078A

公开(公告)日：1998-05-26

申请号：US637281

申请日：1996-04-24

申请人： Shuichi Matsuda ,  Kazutaka Shoji

发明人： Shuichi Matsuda ,  Kazutaka Shoji

IPC分类号： H01L21/60 ,  H01L23/12 ,  H01L23/485 ,  H01L23/498 ,  H01L23/48

CPC分类号： H01L24/10 ,  H01L23/49816 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13006 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/3025

摘要： A semiconductor device including a semiconductor chip having electrode pads, a package composed of a plurality of insulating films and adhered to the semiconductor chip by an adhesive agent. The package includes wiring patterns interposed between the plurality of insulating films, and the wiring patterns are selectively connected to the electrode pads at one end, and to the plurality of electrically conductive protrusions at the other end, via viaholes. The semiconductor device further includes a plurality of electrically conductive protrusions extending from the outermost wiring patterns via the viaholes provided in the outermost insulating film.

摘要翻译： 一种半导体器件，包括具有电极焊盘的半导体芯片，由多个绝缘膜构成的封装，并通过粘合剂粘附到半导体芯片。 封装包括插入在多个绝缘膜之间的布线图案，并且布线图案在一端被选择性地连接到电极焊盘，并且在另一端通过通孔选择性地连接到多个导电突起。 半导体器件还包括从最外面的布线图形经由设置在最外层绝缘膜中的通孔延伸的多个导电突起。