公开(公告)号：US08101526B2

公开(公告)日：2012-01-24

申请号：US12046673

申请日：2008-03-12

申请人： Shuit-Tong Lee ,  Wenjun Zhang ,  Igor Bello ,  You-Sheng Zou

发明人： Shuit-Tong Lee ,  Wenjun Zhang ,  Igor Bello ,  You-Sheng Zou

IPC分类号： H01L21/461

CPC分类号： C30B29/04 ,  B29C59/14 ,  B82Y15/00 ,  B82Y30/00 ,  C23C16/27 ,  C23C16/56 ,  C30B25/105 ,  C30B29/60 ,  Y10S438/947

摘要： A method for fabricating diamond nanopillars includes forming a diamond film on a substrate, depositing a metal mask layer on the diamond film, and etching the diamond film coated with the metal mask layer to form diamond nanopillars below the mask layer. The method may also comprise forming diamond nuclei on the substrate prior to forming the diamond film. Typically, a semiconductor substrate, an insulating substrate, a metal substrate, or an alloy substrate is used.

摘要翻译： 一种用于制造金刚石纳米柱的方法包括在基底上形成金刚石膜，在金刚石膜上沉积金属掩模层，以及蚀刻涂覆有金属掩模层的金刚石膜，以在掩模层下形成金刚石纳米柱。 该方法还可以包括在形成金刚石膜之前在衬底上形成金刚石核。 通常使用半导体衬底，绝缘衬底，金属衬底或合金衬底。

公开(公告)号：US20090233445A1

公开(公告)日：2009-09-17

申请号：US12046673

申请日：2008-03-12

申请人： Shuit-Tong Lee ,  Wenjun Zhang ,  Igor Bello ,  You-Sheng Zou

发明人： Shuit-Tong Lee ,  Wenjun Zhang ,  Igor Bello ,  You-Sheng Zou

IPC分类号： H01L21/311 ,  C23F1/02

CPC分类号： C30B29/04 ,  B29C59/14 ,  B82Y15/00 ,  B82Y30/00 ,  C23C16/27 ,  C23C16/56 ,  C30B25/105 ,  C30B29/60 ,  Y10S438/947

摘要： A method for fabricating diamond nanopillars includes forming a diamond film on a substrate, depositing a metal mask layer on the diamond film, and etching the diamond film coated with the metal mask layer to form diamond nanopillars below the mask layer. The method may also comprise forming diamond nuclei on the substrate prior to forming the diamond film. Typically, a semiconductor substrate, an insulating substrate, a metal substrate, or an alloy substrate is used.

摘要翻译： 一种用于制造金刚石纳米柱的方法包括在基底上形成金刚石膜，在金刚石膜上沉积金属掩模层，以及蚀刻涂覆有金属掩模层的金刚石膜，以在掩模层下形成金刚石纳米柱。 该方法还可以包括在形成金刚石膜之前在衬底上形成金刚石核。 通常使用半导体衬底，绝缘衬底，金属衬底或合金衬底。

公开(公告)号：US08158011B2

公开(公告)日：2012-04-17

申请号：US12250716

申请日：2008-10-14

申请人： Wen-Jun Zhang ,  Igor Bello ,  Shuit-Tong Lee ,  You-Sheng Zou ,  Yat Ming Chong ,  Qing Ye

发明人： Wen-Jun Zhang ,  Igor Bello ,  Shuit-Tong Lee ,  You-Sheng Zou ,  Yat Ming Chong ,  Qing Ye

IPC分类号： C25F3/00 ,  B44C1/22

CPC分类号： C23C16/0254 ,  C23C16/274 ,  C23C16/342 ,  C30B23/02 ,  C30B25/02 ,  C30B25/105 ,  C30B29/04 ,  C30B29/403

摘要： A conical structure of cubic Boron Nitride (cBN) is formed on a diamond layered substrate. A method of forming the cBN structure includes steps of (a) forming diamond nuclei on a substrate, (b) growing a layer of diamond film on the substrate, (c) depositing a cBN film on said diamond layer, (d) pre-depositing nanoscale etching masks on the cBN film, and (e) etching the deposited cBN film. In particular, though not exclusively, the cubic Boron Nitride structure has great potential applications in probe analytical and testing techniques including scanning probe microscopy (SPM) and nanoindentation, nanomechanics and nanomachining in progressing microelectromechanical system (MEMS) and nanoelectyromechanical system (NEMS) devices, field electron emission, vacuum microelectronic devices, sensors and different electrode systems including those used in electrochemistry.

摘要翻译： 在金刚石层状基板上形成立方氮化硼（cBN）的锥形结构。 形成cBN结构的方法包括以下步骤：（a）在衬底上形成金刚石核，（b）在衬底上生长一层金刚石膜，（c）在所述金刚石层上沉积cBN膜，（d） 在cBN膜上沉积纳米级蚀刻掩模，和（e）蚀刻沉积的cBN膜。 具体而言，立方氮化硼结构在探针分析和测试技术方面具有巨大的潜在应用，包括扫描探针显微镜（SPM）和纳米压痕，纳米力学和纳米加工在进行中的微机电系统（MEMS）和纳米机电系统（NEMS） 场电子发射，真空微电子器件，传感器和不同电极系统，包括用于电化学的电极系统。

公开(公告)号：US07579759B2

公开(公告)日：2009-08-25

申请号：US11760996

申请日：2007-06-11

申请人： Shuit-Tong Lee ,  Wen-Jun Zhang ,  You-Sheng Zou ,  Igor Bello ,  Kwok Leung Ma ,  Kar Man Leung ,  Yat Ming Chong

发明人： Shuit-Tong Lee ,  Wen-Jun Zhang ,  You-Sheng Zou ,  Igor Bello ,  Kwok Leung Ma ,  Kar Man Leung ,  Yat Ming Chong

IPC分类号： H01L41/09

CPC分类号： H03H9/02582 ,  H03H9/02574

摘要： A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.

摘要翻译： 公开了一种由cBN /金刚石复合结构制成的表面声波（SAW）器件及其制造方法。 在基于立方氮化硼和金刚石复合结构的SAW器件中，金刚石硬质层包括随机取向的多晶金刚石（poly-D），定向（异质外延）金刚石，单晶金刚石晶片和纳米晶金刚石（nano-D）膜 。 具有接近金刚石声速的cBN胶片作为压电层，直接沉积在金刚石硬质层上，没有任何软sp2-BN孵育层，通过离子辅助物理气相沉积（PVD）和等离子体增强（或离子） 化学气相沉积（PECVD）。 由于cBN和金刚石层状材料之间的高音速和低速分散，基于立方氮化硼和金刚石复合结构的本SAW器件可以提高器件性能并在超高频范围内工作。

公开(公告)号：US20100093171A1

公开(公告)日：2010-04-15

申请号：US12250716

申请日：2008-10-14

申请人： Wen-Jun Zhang ,  Igor Bello ,  Shuit-Tong Lee ,  You-Sheng Zou ,  Yat Ming Chong ,  Qing Ye

发明人： Wen-Jun Zhang ,  Igor Bello ,  Shuit-Tong Lee ,  You-Sheng Zou ,  Yat Ming Chong ,  Qing Ye

IPC分类号： H01L21/306 ,  B44C1/22

CPC分类号： C23C16/0254 ,  C23C16/274 ,  C23C16/342 ,  C30B23/02 ,  C30B25/02 ,  C30B25/105 ,  C30B29/04 ,  C30B29/403

摘要： A conical structure of cubic Boron Nitride (cBN) is formed on a diamond layered substrate. A method of forming the cBN structure includes steps of (a) forming diamond nuclei on a substrate, (b) growing a layer of diamond film on the substrate, (c) depositing a cBN film on said diamond layer, (d) pre-depositing nanoscale etching masks on the the cBN film, and (e) etching the the deposited cBN film. In particular, though not exclusively, the cubic Boron Nitride structure has great potential applications in probe analytical and testing techniques including scanning probe microscopy (SPM) and nanoindentation, nanomechanics and nanomachining in progressing microelectromechanical system (MEMS) and nanoelectyromechanical system (NEMS) devices, field electron emission, vacuum microelectronic devices, sensors and different electrode systems including those used in electrochemistry.

摘要翻译： 在金刚石层状基板上形成立方氮化硼（cBN）的锥形结构。 形成cBN结构的方法包括以下步骤：（a）在衬底上形成金刚石核，（b）在衬底上生长一层金刚石膜，（c）在所述金刚石层上沉积cBN膜，（d） 在cBN膜上沉积纳米级蚀刻掩模，和（e）蚀刻沉积的cBN膜。 具体而言，立方氮化硼结构在探针分析和测试技术方面具有巨大的潜在应用，包括扫描探针显微镜（SPM）和纳米压痕，纳米力学和纳米加工在进行中的微机电系统（MEMS）和纳米机电系统（NEMS） 场电子发射，真空微电子器件，传感器和不同电极系统，包括用于电化学的电极系统。

公开(公告)号：US20060147282A1

公开(公告)日：2006-07-06

申请号：US11207535

申请日：2005-08-19

申请人： Igor Bello ,  Wenjun Zhang ,  Shuit-Tong Lee

发明人： Igor Bello ,  Wenjun Zhang ,  Shuit-Tong Lee

IPC分类号： B23P15/28 ,  B32B19/00

CPC分类号： C23C14/0647 ,  C23C16/02 ,  C23C16/27 ,  C23C16/342 ,  Y10T407/27 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

摘要： Cubic boron nitride/diamond (cBND) composite films with excellent adherence to various substrates and their fabrication method are disclosed. The cBND composite confining cBN can be prepared without any amorphous/turbostratic BN (aBN/tBN) incubation layers. The cBND composite is established on the compatibility of structural and physical properties of two superior materials: cBN on top and diamond beneath. The underlying diamond is adapted to the substrate of choice using a variety of methods which may include prescratching the substrates, bias enhanced nucleation, etching for depleting undesirable chemical elements, construction of buffer layers and gradient buffer layers for the isolation of undesirable chemical elements or/and adaptation of physical properties. The diamond nuclei are preferably formed either by bias-enhanced nucleation or by pre-scratching the substrate prior to nucleation. The cBN films in cBND composites of the present invention can grow directly on the underlaying diamond films in heteroepitaxial relationships.

摘要翻译： 公开了对各种基材具有优异粘附性的立方氮化硼/金刚石（cBND）复合膜及其制造方法。 cBND复合材料限制cBN可以在没有任何无定形/涡流BN（aBN / tBN）孵育层的情况下制备。 cBND复合材料建立在两种优质材料的结构和物理性能的兼容性上：顶部的cBN和下面的金刚石。 底层金刚石使用各种方法适应于所选择的基底，其可以包括预先对基底进行预处理，偏置增强的成核，用于消耗不期望的化学元素的蚀刻，用于隔离不期望的化学元素的缓冲层和梯度缓冲层的构造或/ 和物理性质的适应。 金刚石核优选通过偏置增强成核或通过在成核之前预先刮擦基底来形成。 本发明的cBND复合材料中的cBN膜可以以异质外延关系直接在底层金刚石膜上生长。

公开(公告)号：US08007910B2

公开(公告)日：2011-08-30

申请号：US11880115

申请日：2007-07-19

申请人： Wenjun Zhang ,  Shuit-Tong Lee ,  Igor Bello ,  Kar Man Leung ,  He-qin Li ,  You-Shen Zou ,  Yat Ming Chong ,  Kwok Leung Ma

发明人： Wenjun Zhang ,  Shuit-Tong Lee ,  Igor Bello ,  Kar Man Leung ,  He-qin Li ,  You-Shen Zou ,  Yat Ming Chong ,  Kwok Leung Ma

IPC分类号： B32B9/00

CPC分类号： C23C16/279 ,  C23C14/0647 ,  C23C16/274 ,  C23C28/044 ,  C23C28/048 ,  C23C28/42 ,  C23C30/005 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

摘要： A multilayer coating (MLC) is composed of two chemically different layered nanocrystalline materials, nanodiamond (nanoD) and nano-cubic boron nitride (nono-cBN). The structure of the MLC and fabrication sequence of layered structure are disclosed. The base layer is preferably nanoD and is the first deposited layer serving as an accommodation layer on a pretreated substrate. It can be designed with a larger thickness whereas subsequent alternate nano-cBN and nanoD layers are typically prepared with a thickness of 2 to 100 nm. The thickness of these layers can be engineered for a specific use. The deposition of the nanoD layer, by either cold or thermal plasma CVD, is preceded by diamond nucleation on a pretreated and/or precoated substrate, which has the capacity to accommodate the MLC and provides excellent adhesion. Nano-cBN layers are directly grown on nanodiamond crystallites using ion-assisted physical vapor deposition (PVD) and ion-assisted plasma enhanced chemical vapor deposition (PECVD), again followed by nanodiamond deposition using CVD methods in cycles until the intended number of layers of the MLC is obtained.

摘要翻译： 多层涂层（MLC）由两种化学不同的层状纳米晶体材料纳米金刚石（nanoD）和纳米立方氮化硼（non-cBN）组成。 公开了MLC的结构和分层结构的制造顺序。 基层优选为纳米D，并且是作为预处理基底上的收容层的第一沉积层。 它可以被设计成具有较大的厚度，而后续的交替的纳米cBN和nanoD层通常以2至100nm的厚度制备。 这些层的厚度可以被设计用于特定用途。 通过冷或热等离子体CVD沉积纳米D层之前，在预处理和/或预涂底物上进行金刚石成核，其具有容纳MLC的能力并提供优异的附着力。 使用离子辅助物理气相沉积（PVD）和离子辅助等离子体增强化学气相沉积（PECVD）在纳米金刚石微晶上直接生长纳米cBN层，然后再循环使用CVD法进行纳米金刚石沉积，直到预期数量的层 获得MLC。

公开(公告)号：US07645513B2

公开(公告)日：2010-01-12

申请号：US11207535

申请日：2005-08-19

申请人： Igor Bello ,  Wenjun Zhang ,  Shuit-Tong Lee

发明人： Igor Bello ,  Wenjun Zhang ,  Shuit-Tong Lee

IPC分类号： B32B9/00

CPC分类号： C23C14/0647 ,  C23C16/02 ,  C23C16/27 ,  C23C16/342 ,  Y10T407/27 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

摘要： Cubic boron nitride/diamond (cBND) composite films with excellent adherence to various substrates and their fabrication method are disclosed. The cBND composite confining cBN can be prepared without any amorphous/turbostratic BN (aBN/tBN) incubation layers. The cBND composite is established on the compatibility of structural and physical properties of two superior materials: cBN on top and diamond beneath. The underlying diamond is adapted to the substrate of choice using a variety of methods which may include prescratching the substrates, bias enhanced nucleation, etching for depleting undesirable chemical elements, construction of buffer layers and gradient buffer layers for the isolation of undesirable chemical elements or/and adaptation of physical properties. The diamond nuclei are preferably formed either by bias-enhanced nucleation or by pre-scratching the substrate prior to nucleation. The cBN films in cBND composites of the present invention can grow directly on the underlaying diamond films in heteroepitaxial relationships.

摘要翻译： 公开了对各种基材具有优异粘附性的立方氮化硼/金刚石（cBND）复合膜及其制造方法。 cBND复合材料限制cBN可以在没有任何无定形/涡流BN（aBN / tBN）孵育层的情况下制备。 cBND复合材料建立在两种优质材料的结构和物理性能的兼容性上：顶部的cBN和下面的金刚石。 底层金刚石使用各种方法适应于所选择的基底，其可以包括预先对基底进行预处理，偏置增强的成核，用于消耗不期望的化学元素的蚀刻，用于隔离不期望的化学元素的缓冲层和梯度缓冲层的构造或/ 和物理性质的适应。 金刚石核优选通过偏置增强成核或通过在成核之前预先刮擦基底来形成。 本发明的cBND复合材料中的cBN膜可以以异质外延关系直接在底层金刚石膜上生长。

公开(公告)号：US20090022969A1

公开(公告)日：2009-01-22

申请号：US11880115

申请日：2007-07-19

申请人： Wenjun Zhang ,  Shuit-Tong Lee ,  Igor Bello ,  Kar Man Leung ,  He-qin Li ,  You-Shen Zou ,  Yat Ming Chong ,  Kwok Leung Ma

发明人： Wenjun Zhang ,  Shuit-Tong Lee ,  Igor Bello ,  Kar Man Leung ,  He-qin Li ,  You-Shen Zou ,  Yat Ming Chong ,  Kwok Leung Ma

IPC分类号： B32B7/02

CPC分类号： C23C16/279 ,  C23C14/0647 ,  C23C16/274 ,  C23C28/044 ,  C23C28/048 ,  C23C28/42 ,  C23C30/005 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

摘要： A multilayer coating (MLC) is composed of two chemically different layered nanocrystalline materials, nanodiamond (nanoD) and nano-cubic boron nitride (nono-cBN). The structure of the MLC and fabrication sequence of layered structure are disclosed. The base layer is preferably nanoD and is the first deposited layer serving as an accommodation layer on a pretreated substrate. It can be designed with a larger thickness whereas subsequent alternate nano-cBN and nanoD layers are typically prepared with a thickness of 2 to 100 nm. The thickness of these layers can be engineered for a specific use. The deposition of the nanoD layer, by either cold or thermal plasma CVD, is preceded by diamond nucleation on a pretreated and/or precoated substrate, which has the capacity to accommodate the MLC and provides excellent adhesion. Nano-cBN layers are directly grown on nanodiamond crystallites using ion-assisted physical vapor deposition (PVD) and ion-assisted plasma enhanced chemical vapor deposition (PECVD), again followed by nanodiamond deposition using CVD methods in cycles until the intended number of layers of the MLC is obtained.

摘要翻译： 多层涂层（MLC）由两种化学不同的层状纳米晶体材料纳米金刚石（nanoD）和纳米立方氮化硼（non-cBN）组成。 公开了MLC的结构和分层结构的制造顺序。 基层优选为纳米D，并且是作为预处理基底上的收容层的第一沉积层。 它可以被设计成具有较大的厚度，而后续的交替的纳米cBN和nanoD层通常以2至100nm的厚度制备。 这些层的厚度可以被设计用于特定用途。 通过冷或热等离子体CVD沉积纳米D层之前，在预处理和/或预涂底物上进行金刚石成核，其具有容纳MLC的能力并提供优异的附着力。 使用离子辅助物理气相沉积（PVD）和离子辅助等离子体增强化学气相沉积（PECVD）在纳米金刚石微晶上直接生长纳米cBN层，然后再循环使用CVD法进行纳米金刚石沉积，直到预期数量的层 获得MLC。

公开(公告)号：US06902716B2

公开(公告)日：2005-06-07

申请号：US10282779

申请日：2002-10-29

申请人： Shuit-Tong Lee ,  Igor Bello ,  Wenjun Zhang ,  Chit Yiu Chan

发明人： Shuit-Tong Lee ,  Igor Bello ,  Wenjun Zhang ,  Chit Yiu Chan

IPC分类号： C30B25/10 ,  C30B33/00 ,  B01J3/06 ,  B01J3/08

CPC分类号： C30B33/00 ,  C30B25/105 ,  C30B29/04 ,  C30B29/605

摘要： The present invention deals with the generation of sharp single crystal diamond tips and the arrays of these tips, and their fabrication technology. The invention combines the deposition of synthetic diamond films with reactive etching processes. Upon the diamond orientation prepared and reactive etching environment with considerable directivity of ions, single crystal diamond tips with different apical angles can be fabricated. Very sharp diamond tips with an apical angle of no more than about 28° and a tip radius smaller than 50 nm are fabricated on pyramidal-shaped [001]-textured diamond films by subsequent reactive etching., The technology is based on selective etching of sp2- and sp3- hybridized carbons by the activated constituents of an etching environment, in particular based on atomic hydrogen, in a way similar to ion bombardment, which contributes to overall etching and local conversion of diamond to graphitic phase promoting further etching with chemically activated species. This novel method is capable of forming diamond tip arrays over large areas with great uniformity and high reproducibility. The diamond tips prepared are single diamond crystals with their [001] axes parallel each other and normal to the substrate surface. The invented technology enables the control of the apical angle, radius and density of the diamond tips.

摘要翻译： 本发明涉及产生尖锐的单晶金刚石尖端和这些尖端的阵列及其制造技术。 本发明将合成金刚石膜的沉积与反应性蚀刻工艺相结合。 在制备菱形取向和具有相当方向性离子的反应性蚀刻环境的情况下，可以制造具有不同顶角的单晶金刚石尖端。 通过随后的反应蚀刻，在金字塔形的[001]纹理金刚石膜上制造顶尖角不超过约28°，尖端半径小于50nm的非常锋利的金刚石尖端。该技术基于选择性蚀刻 通过蚀刻环境的活化组分，特别是基于原子氢，以类似于离子轰击的方式，杂交碳和杂原子的碳，这有助于 整体蚀刻和金刚石局部转化为石墨相，促进用化学活化物质进一步蚀刻。 这种新方法能够在大面积上形成金刚石尖端阵列，具有很好的均匀性和高重现性。 制备的金刚石尖端是单晶金刚石晶体，其[001]轴线彼此平行并垂直于基板表面。 本发明的技术能够控制金刚石尖端的顶角，半径和密度。