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9 条记录 (耗时 0.017 秒)

    Reduction exposure apparatus with correction for alignment light having inhomogeneous intensity distribution
    1.
    发明授权
    Reduction exposure apparatus with correction for alignment light having inhomogeneous intensity distribution 失效
    具有不均匀强度分布的对准光校正的还原曝光装置

    公开(公告)号：US5214493A

    公开(公告)日：1993-05-25

    申请号：US746612

    申请日：1991-08-19

    申请人： Shuji Sugiyama ,  Yoshimitsu Saze ,  Katsunori Onuki

    发明人： Shuji Sugiyama ,  Yoshimitsu Saze ,  Katsunori Onuki

    IPC分类号： G01B11/00 ,  G02B5/18 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

    CPC分类号： G03F9/70

    摘要： A diffraction grating shaped reference pattern having the same grating pitch as diffraction grating shaped alignment pattern formed on a wafer is irradiated by alignment light, and the diffracted light signal obtained from the reference pattern is stored in a memory. The diffraction grating shaped alignment pattern formed on the wafer is irradiated by the alignment light, and the diffracted light signal from the alignment pattern is corrected based on the diffracted light signal stored in the memory.

    摘要翻译： 具有与形成在晶片上的衍射光栅形状的取向图案相同的光栅间距的衍射光栅形参考图案被对准光照射，从参考图案获得的衍射光信号存储在存储器中。 通过对准光照射形成在晶片上的衍射光栅形状的取向图案，并且基于存储在存储器中的衍射光信号来校正来自对准图案的衍射光信号。

    WORKPIECE HOLDER, SEMICONDUCTOR FABRICATING APPARATUS, SEMICONDUCTOR INSPECTING APPARATUS, CIRCUIT PATTERN INSPECTING APPARATUS, CHARGED PARTICLE BEAM APPLICATION APPARATUS, CALIBRATING SUBSTRATE, WORKPIECE HOLDING METHOD, CIRCUIT PATTERN INSPECTING METHOD, AND CHARGED PARTICLE BEAM APPLICATION METHOD
    3.
    发明授权
    WORKPIECE HOLDER, SEMICONDUCTOR FABRICATING APPARATUS, SEMICONDUCTOR INSPECTING APPARATUS, CIRCUIT PATTERN INSPECTING APPARATUS, CHARGED PARTICLE BEAM APPLICATION APPARATUS, CALIBRATING SUBSTRATE, WORKPIECE HOLDING METHOD, CIRCUIT PATTERN INSPECTING METHOD, AND CHARGED PARTICLE BEAM APPLICATION METHOD 失效

    公开(公告)号：US06509564B1

    公开(公告)日：2003-01-21

    申请号：US09292626

    申请日：1999-04-15

    申请人： Hiroyuki Suzuki ,  Hiroyuki Shinada ,  Atsuko Takafuji ,  Yasutsugu Usami ,  Shuji Sugiyama

    发明人： Hiroyuki Suzuki ,  Hiroyuki Shinada ,  Atsuko Takafuji ,  Yasutsugu Usami ,  Shuji Sugiyama

    IPC分类号： H01J3728

    CPC分类号： H01J37/28 ,  H01J2237/082 ,  H01J2237/2826

    摘要： The present invention is intended to highly fast, stably acquire highly accurate images from irradiated positions with an electron beam on a circuit pattern in the step of fabricating a semiconductor device including an insulating material or a mixture of an insulating material and a conductive material, without occurrence of any deviation in the irradiated position in the images to be comparatively inspected, automatically comparing the images with each other thereby inspecting defects of the circuit pattern without occurrence of errors, and feeding back the result to the conditions of fabricating the semiconductor device thereby increasing the reliability of the semiconductor device and reducing the defective percentage thereof. The dependence of the surface height of a workpiece on the corrected amount of deflection at a central portion of a workpiece stage is compared with that at the outer peripheral portion of the workpiece, to obtain a distortion amount inherent to the outer peripheral portion of the workpiece. The distortion amount is eliminated from an outer peripheral standard mark signal, to calculate the dependence of the height on the corrected amount of deflection at the outer peripheral portion, thereby obtaining the deflection correcting amount at the outer peripheral portion equivalent to that obtained at the central portion. Since a suitable deflection correcting table can be prepared only by using the outer peripheral standard mark, the deflection correcting table can be updated by repeating desired times calculation of the corrected amount of deflection at the outer peripheral portion while a wafer is left mounted. As a result, the deflection correcting table including the dependence of the surface height, which table is capable of keeping up with the drift of the electron beam or the like, can be accurately obtained without reducing the throughput.

    Method of refining crude oil
    4.
    发明授权
    Method of refining crude oil 失效
    原油精炼方法

    公开(公告)号：US5851381A

    公开(公告)日：1998-12-22

    申请号：US400494

    申请日：1995-03-08

    申请人： Meishi Tanaka ,  Shuji Sugiyama

    发明人： Meishi Tanaka ,  Shuji Sugiyama

    IPC分类号： C10G65/04 ,  C10G69/00 ,  C10G45/00 ,  C10G65/12

    CPC分类号： C10G65/04 ,  C10G69/00

    摘要： A method of refining crude oil by distillation and desulfurization for the preparation of petroleum products can reduce cost of apparatus and cost of operation and can be operated with better stability by simplified control of operation. In the method, a naphtha fraction is separated from crude oil by distillation, the residual fraction which remained after the naphtha fraction has been removed from the crude oil is hydrodesulfurized and the hydrodesulfurized fraction is separated into further fractions by distillation. A kerosene fraction and a gas oil fraction of high quality can be obtained and yields of intermediate fractions such as kerosene and gas oil can be increased by introducing a hydrotreating process, a high pressure separation process and a residue fluid catalytic cracking process in a sophisticated way for refining of the residual fraction remained after the naphtha fraction has been removed from the crude oil.

    摘要翻译： 通过蒸馏和脱硫精制原油以制备石油产品的方法可以降低装置的成本和操作成本，并且可以通过简化的操作控制以更好的稳定性操作。 在该方法中，通过蒸馏将石脑油馏分与原油分离，将从石油馏分中除去的石油馏分后残留的馏分加氢脱硫，并将加氢脱硫馏分通过蒸馏分离成其他馏分。 可以获得高质量的煤油馏分和粗柴油馏分，并且可以通过以复杂的方式引入加氢处理方法，高压分离方法和残余流体催化裂化方法来增加中间馏分如煤油和瓦斯油的产率 用于精炼在从石油馏分中除去石脑油馏分后留下的残余馏分。

    Optical exposer
    5.
    发明授权
    Optical exposer 失效
    光学曝光机

    公开(公告)号：US4690529A

    公开(公告)日：1987-09-01

    申请号：US741800

    申请日：1985-08-05

    申请人： Shuji Sugiyama ,  Shuji Syohda ,  Shinji Kuniyoshi

    发明人： Shuji Sugiyama ,  Shuji Syohda ,  Shinji Kuniyoshi

    IPC分类号： G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G03B27/52

    CPC分类号： G03F9/70 ,  H01L21/30

    摘要： This invention relates to an optical exposer wherein a predetermined pattern is projected onto a work piece through a projector lens, and an alignment mark on the work piece is detected through the projector lens. It is desirable that a detection waveform of the alignment mark will not be deformed. Since the wave deformation is due to distortion of the alignment light, a first wavelength light and a second wavelength light are used as the alignment light to reduce the distortion effect.

    摘要翻译： PCT No.PCT / JP84 / 00467 Sec。 371日期1985年8月5日 102（e）日期1985年8月5日PCT提交1984年10月3日PCT公布。 公开号WO85 / 01834 1985年04月25日。本发明涉及一种光学曝光机，其中通过投影透镜将预定图案投影到工件上，并且通过投影仪透镜检测工件上的对准标记。 期望对准标记的检测波形不会变形。 由于波形变形是由于取向光的变形引起的，所以使用第一波长光和第二波长光作为取向光，以减小失真效应。

    Projection aligner for fabricating semiconductor device having projection optics
    7.
    发明授权
    Projection aligner for fabricating semiconductor device having projection optics 失效
    用于制造具有投影光学器件的半导体器件的投射对准器

    公开(公告)号：US4941745A

    公开(公告)日：1990-07-17

    申请号：US291163

    申请日：1988-12-28

    申请人： Shuji Sugiyama

    发明人： Shuji Sugiyama

    IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

    CPC分类号： G03F9/70

    摘要： A projection aligner having a projection optics which project circuit patterns of reticles on a wafer next by step, comprising an X-Y stage mounting the wafer and moved to an X or Y direction by a stage controller, a developer for developing an alignment mark projected on the wafer by the projection optics, an alignment mark detector being disposed on the projection optics, and a correcting arrangement for an offset error of the alignment mark detector by measuring the offset error of a zero point after the wafer is projected with an alignment mark by the projection optics, the alignment mark is developed by the developer and the developed alignment mark on the wafer is moved to is detection area which is previously set based on design data keeping the wafer fixed on the X-Y stage. The offset error is measured as moving distance of X-Y stage and adjust the stage controller or zero point of the alignment mark detector in order to project actual circuit patterns on the wafer correctly.

    摘要翻译： 一种具有投影光学元件的投影对准器，该投影光学元件将晶片上的电路图案投影在晶片上，包括安装晶片并通过平台控制器移动到X或Y方向的XY台，用于显影投影在 通过投影光学元件设置晶片，对准标记检测器设置在投影光学器件上，以及校正装置，用于校准标记检测器的偏移误差，通过测量晶片投影后的零点的偏移误差，对准标记由 投影光学元件，由显影剂显影对准标记，将晶片上显影的对准标记移动到基于将晶片固定在XY平台上的设计数据预先设定的检测区域。 偏移误差被测量为X-Y平台的移动距离，并调整平台控制器或对准标记检测器的零点，以正确投影晶圆上的实际电路图案。

    Optical exposure apparatus
    8.
    发明授权
    Optical exposure apparatus 失效
    光学曝光装置

    公开(公告)号：US4615614A

    公开(公告)日：1986-10-07

    申请号：US671218

    申请日：1984-11-14

    申请人： Shuji Sugiyama

    发明人： Shuji Sugiyama

    IPC分类号： H01L21/30 ,  G03B27/34 ,  G03F7/20 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027 ,  G03B27/42

    CPC分类号： G03F9/7026 ,  G03F9/7057

    摘要： An optical exposure apparatus which is suitable for the production of semiconductor devices. To minimize the regions which are not used for exposure around the periphery of a surface being exposed, such as the surface of a semiconductor wafer, a plurality of independent focusing detectors utilizing a gas are arranged about the optical axis of light.

    摘要翻译： PCT No.PCT / JP84 / 00107 Sec。 371日期1984年11月14日 102（e）1984年11月14日日期PCT 1984年3月16日提交。一种适用于制造半导体器件的光学曝光装置。 为了最小化不被曝光的表面周围的区域（例如半导体晶片的表面），利用气体的多个独立的聚焦检测器围绕光轴布置。