公开(公告)号：US4786607A

公开(公告)日：1988-11-22

申请号：US92943

申请日：1987-09-04

申请人： Shumpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

发明人： Shumpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

IPC分类号： H01L27/142 ,  H01L31/0216 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/02167 ,  H01L31/046 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processsing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.

摘要翻译： 公开了一种改进的半导体器件，其由于针孔或其它间隙而没有电流泄漏。 还示出了用于处理半导体器件的改进方法。 根据本发明，在电极沉积之前，在半导体层的制造工艺中产生的间隙被填充绝缘体。

公开(公告)号：US4888305A

公开(公告)日：1989-12-19

申请号：US320788

申请日：1989-03-09

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

IPC分类号： H01L21/30 ,  H01L31/20

CPC分类号： H01L31/208 ,  H01L21/3003 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/004 ,  Y10S148/024

摘要： An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

摘要翻译： 公开了一种改进的半导体处理。 在制造过程中，刚刚形成的半导体层经历光退火，潜在的悬挂键出现在表面和间隙上，然后将中和剂引入半导体的氛围。 这样形成的半导体表现出SEL效应代替Staebler-Wronski效应。

公开(公告)号：US4937651A

公开(公告)日：1990-06-26

申请号：US899160

申请日：1986-08-22

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

IPC分类号： H01L27/142 ,  H01L31/0216 ,  H01L31/20

CPC分类号： H01L31/02167 ,  H01L31/046 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.

公开(公告)号：US5089426A

公开(公告)日：1992-02-18

申请号：US464567

申请日：1990-01-16

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Masato Susukida ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Kaoru Koyanagi ,  Susumu Nagayama

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Masato Susukida ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Kaoru Koyanagi ,  Susumu Nagayama

IPC分类号： H01L27/142 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/20

CPC分类号： H01L31/208 ,  H01L31/02021 ,  H01L31/02167 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29 ,  Y10S438/94

摘要： An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for provessing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result even if transparent electrode is provided on the semiconductor layer.

公开(公告)号：US4986213A

公开(公告)日：1991-01-22

申请号：US251940

申请日：1988-09-28

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

IPC分类号： H01L21/30 ,  H01L31/20

CPC分类号： H01L31/208 ,  H01L21/3003 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/004 ,  Y10S148/024

摘要： An improved semiconductor processing is desclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

公开(公告)号：US5296405A

公开(公告)日：1994-03-22

申请号：US933718

申请日：1992-08-24

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

IPC分类号： H01L21/30 ,  H01L31/20 ,  H01L21/20 ,  H01L21/324

CPC分类号： H01L21/3003 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/003 ,  Y10S148/004 ,  Y10S148/061 ,  Y10S148/09 ,  Y10S148/093

摘要： An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.

摘要翻译： 公开了一种改进的半导体处理。 在制造过程中，形成半导体层，然后进行光退火。 然后将中和剂引入到光电导半导体中。 这样形成的半导体表现出SEL效应而不是Staebler-Wronski效应。

公开(公告)号：US4812415A

公开(公告)日：1989-03-14

申请号：US82115

申请日：1987-08-06

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

IPC分类号： H01L27/142 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/208 ,  H01L31/02021 ,  H01L31/02167 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29 ,  Y10S438/94

摘要： An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced during the fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result when electrodes are provided on the semiconductor layer.

摘要翻译： 公开了一种改进的半导体器件，其由于针孔或其它间隙而没有电流泄漏。 还示出了用于处理半导体器件的改进方法。 根据本发明，在电极沉积之前，半导体层的制造过程中产生的间隙被绝缘体填充。 由于这种结构，当在半导体层上设置电极时，不会产生短路电流。

公开(公告)号：US5171710A

公开(公告)日：1992-12-15

申请号：US520998

申请日：1990-05-09

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Susumu Nagayama ,  Takashi Inujima ,  Masayoshi Abe ,  Takeshi Fukada ,  Mikio Kinka ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Kaoru Koyanagi

IPC分类号： H01L21/30 ,  H01L31/20

CPC分类号： H01L21/3003 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/003 ,  Y10S148/004 ,  Y10S148/061 ,  Y10S148/09 ,  Y10S148/093

摘要： An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.

摘要翻译： 公开了一种改进的半导体处理。 在制造过程中，形成半导体层，然后进行光退火。 然后将中和剂引入到光电导半导体中。 这样形成的半导体表现出SEL效应而不是Staebler-Wronski效应。

公开(公告)号：US4725558A

公开(公告)日：1988-02-16

申请号：US927501

申请日：1986-11-06

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

IPC分类号： H01L27/142 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/208 ,  H01L31/02021 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An improved semiconductor defects curing method and apparatus are disclosed which is free from current leakage due to pin-holes or other defects. Also an improved method for processing a semiconductor device is shown. According to the invention, the gaps or holes in the semiconductor layer produced in the fabrication process are filled with insulator in advance of deposition of electrodes.

摘要翻译： 公开了一种改进的半导体缺陷固化方法和装置，其由于针孔或其它缺陷而没有电流泄漏。 还示出了用于处理半导体器件的改进方法。 根据本发明，在制造工艺中生产的半导体层中的间隙或孔在电极沉积之前被填充绝缘体。

公开(公告)号：US4806496A

公开(公告)日：1989-02-21

申请号：US7780

申请日：1987-01-28

申请人： Kunio Suzuki ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Mikio Kinka ,  Takeshi Fukada ,  Susumu Nagayama ,  Masayoshi Abe ,  Shunpei Yamazaki

发明人： Kunio Suzuki ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Mikio Kinka ,  Takeshi Fukada ,  Susumu Nagayama ,  Masayoshi Abe ,  Shunpei Yamazaki

IPC分类号： H01L27/142 ,  H01L31/20 ,  H01L31/18 ,  H01L21/322

CPC分类号： H01L31/208 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： Photoelectric conversion devices are manufactured at high yield by repairing the devices during the final steps of the manufacuturing process. Short current paths resulting from the formation process of semiconductor layers can be eliminated by applying a reverse voltage to the layers, which thus are heated and made insulating. After the elimination of the short current paths, the reverse current no longer passes beyond 15 mA on a reverse voltage of 8 V.

摘要翻译： 通过在制造过程的最终步骤期间修复设备，以高产率制造光电转换装置。 可以通过向层加上反向电压来消除由半导体层的形成过程产生的短路电流，从而被加热并制成绝缘。 在消除短路电流之后，反向电流在8V的反向电压下不再超过15mA。