Semiconductor device with staggered leads
    2.
    发明授权
    Semiconductor device with staggered leads 有权
    具有交错引线的半导体器件

    公开(公告)号:US08643153B2

    公开(公告)日:2014-02-04

    申请号:US13461801

    申请日:2012-05-02

    IPC分类号: H01L23/495 H01L23/48

    摘要: A process for assembling a semiconductor device includes providing a lead frame having a native plane and a plurality of leads having a native lead pitch. The process includes trimming and forming a first subset of the plurality of leads to provide a first row of leads. The process includes trimming and forming a second subset of the plurality of leads to provide a second row of leads. At least one subset of leads is formed with an obtuse angle relative to the native plane such that lead pitch associated with the first or second subset of leads is greater than the native lead pitch.

    摘要翻译: 一种用于组装半导体器件的方法包括提供具有天然平面的引线框架和具有天然引线间距的多个引线。 该过程包括修剪和形成多个引线的第一子集以提供第一行引线。 该过程包括修剪和形成多个引线的第二子集以提供第二排引线。 引线的至少一个子集以相对于天平平面的钝角形成,使得与引线的第一或第二子集相关联的引线间距大于原始引线间距。

    SEMICONDUCTOR DEVICE WITH STAGGERED LEADS
    3.
    发明申请
    SEMICONDUCTOR DEVICE WITH STAGGERED LEADS 有权
    具有突破性领导的半导体器件

    公开(公告)号:US20120286406A1

    公开(公告)日:2012-11-15

    申请号:US13461801

    申请日:2012-05-02

    IPC分类号: H01L23/495 H01L21/00

    摘要: A process for assembling a semiconductor device includes providing a lead frame having a native plane and a plurality of leads having a native lead pitch. The process includes trimming and forming a first subset of the plurality of leads to provide a first row of leads. The process includes trimming and forming a second subset of the plurality of leads to provide a second row of leads. At least one subset of leads is formed with an obtuse angle relative to the native plane such that lead pitch associated with the first or second subset of leads is greater than the native lead pitch.

    摘要翻译: 一种用于组装半导体器件的方法包括提供具有天然平面的引线框架和具有天然引线间距的多个引线。 该过程包括修剪和形成多个引线的第一子集以提供第一行引线。 该过程包括修剪和形成多个引线的第二子集以提供第二排引线。 引线的至少一个子集以相对于天平平面的钝角形成,使得与引线的第一或第二子集相关联的引线间距大于原始引线间距。