公开(公告)号：US4331800A

公开(公告)日：1982-05-25

申请号：US144036

申请日：1980-04-28

申请人： Hiroo Inata ,  Shunichi Matsumura ,  Makoto Ogasawara

发明人： Hiroo Inata ,  Shunichi Matsumura ,  Makoto Ogasawara

IPC分类号： C08G69/44 ,  C08G63/68

CPC分类号： C08G69/44

摘要： A process for producing an aromatic polyester having an increased degree of polymerization, which comprises reacting a substantially linear, fiber forming aromatic polyester containing terminal hydroxyl groups and having an aromatic dicarboxylic acid as a main acid component at an elevated temperature with a bis-cyclic imino ether compound of the formula [I] such as 2,2'-bis(2-oxazoline), 2,2'-bis(5,6-dihydro-4H-1,3-oxadine) thereby bonding the molecular chains of the aromatic polyester to each other by the terminal carboxyl groups thereof to rapidly form said aromatic polyester having an increased degree of polymerization.Said reaction can be carried out under atmospheric or elevated pressure.According to the process, an aromatic polyester having a low terminal caboxyl concentration and an increased degree of polymerization can be obtained.

摘要翻译： 一种具有增加聚合度的芳族聚酯的制备方法，该方法包括使具有末端羟基并且具有芳族二羧酸作为主要酸成分的基本上直链的形成纤维的芳族聚酯在升高的温度下与双环亚氨基 醚化合物，如2,2'-双（2-恶唑啉），2,2'-双（5,6-二氢-4H-1,3-恶嗪等），由此将分子链 芳族聚酯通过其末端羧基彼此之间，以快速形成具有增加的聚合度的所述芳族聚酯。 所述反应可以在大气压或高压下进行。 根据该方法，可以得到具有低端甲氧基浓度和增加聚合度的芳族聚酯。

公开(公告)号：US4291152A

公开(公告)日：1981-09-22

申请号：US133797

申请日：1980-03-25

申请人： Hiroo Inata ,  Shunichi Matsumura ,  Makoto Ogasawara

发明人： Hiroo Inata ,  Shunichi Matsumura ,  Makoto Ogasawara

IPC分类号： C08G63/685 ,  C08G63/91 ,  C08G63/44 ,  C08G73/16

CPC分类号： C08G63/6856 ,  C08G63/916

摘要： A process for producing an aromatic polyester having an increased degree of polymerization. The process comprises reacting a hydroxyl-terminated, substantially linear, fiber-forming aromatic polyester having an aromatic dicarboxylic acid as a main acid component at an elevated temperature with a bi-cyclic imino ester compound of formula [I] or formula [II]. According to the process, the molecular chains of the aromatic polyester are bonded to each other by the terminal hydroxyl groups thereof to form rapidly the aromatic polyester having an increased degree of polymerization.

摘要翻译： 具有增加聚合度的芳族聚酯的制造方法。 该方法包括在升高的温度下使具有芳族二羧酸作为主要酸成分的羟基封端的，基本上直链的成纤的芳族聚酯与式[I]或式[II]的双环亚氨基酯化合物反应。 根据该方法，芳族聚酯的分子链通过其末端羟基彼此键合，以快速形成具有增加的聚合度的芳族聚酯。

公开(公告)号：US4369207A

公开(公告)日：1983-01-18

申请号：US122664

申请日：1980-02-19

申请人： Shunichi Matsumura ,  Hiroo Inata ,  Makoto Ogasawara

发明人： Shunichi Matsumura ,  Hiroo Inata ,  Makoto Ogasawara

IPC分类号： B32B15/08 ,  C08F283/02 ,  C08J7/18 ,  G03F7/00 ,  H05K1/03 ,  B05D3/06

CPC分类号： C08J7/18 ,  B32B15/08 ,  C08F283/02 ,  G03F7/00 ,  H05K1/0326 ,  C08J2367/02

摘要： A laminated film structure composed of a polyester film and an electroconductive metal layer laminated to at least one surface of the polyester resin film, characterized in that said polyester film is an unstretched film of a cured aromatic polyester having a crosslinking degree of not less than 70%, a swelling degree of not more than 30 and an elongation at room temperature of not less than 10%; and a process for producing said film structure.

摘要翻译： 由聚酯膜和导电金属层组成的叠层膜结构层压在聚酯树脂膜的至少一个表面上，其特征在于，所述聚酯膜是交联度不小于70的固化芳族聚酯的未拉伸膜 ％，溶胀度不大于30，室温下的伸长率不小于10％; 以及制造所述膜结构的方法。

公开(公告)号：US4333907A

公开(公告)日：1982-06-08

申请号：US162576

申请日：1980-06-24

申请人： Takanori Urasaki ,  Yasuji Hirabayashi ,  Makoto Ogasawara ,  Hiroo Inata

发明人： Takanori Urasaki ,  Yasuji Hirabayashi ,  Makoto Ogasawara ,  Hiroo Inata

IPC分类号： B29C48/33 ,  C08G63/60 ,  C08J5/18 ,  B29C17/02 ,  C08G63/02

CPC分类号： C08J5/18 ,  B29C47/24 ,  C08G63/605 ,  B29C47/0021 ,  B29C47/0026 ,  C08J2367/02

摘要： A melt-molded film of a wholly aromatic polyester, said film having in its plane two perpendicularly crossing directions in each of which the Young's modulus and strength of the film at 25.degree. C. are at least about 200 kg/mm.sup.2 and at least about 5 kg/mm.sup.2 respectively, the product of the Young's moduli of the film in the two directions being at least 8.times.10.sup.4 (kg/mm.sup.2).sup.2, and said wholly aromatic polyester being substantially linear, having a melt viscosity at about its melting point of at least about 10000 poises, and being composed substantially of recurring units derived from p-hydroxybenzoic acid, recurring units derived from a m- or p-oriented aromatic dicarboxylic acid and recurring units derived from a m- or p-oriented aromatic dihydroxy compound, the proportion of said recurring units derived from p-hydroxybenzoic acid being about 30 to about 70 mole % based on the entire recurring units. This invention provides also a process for producing said film which comprises heating aforesaid wholly aromatic polyester to a temperature above a point at which the polyester is extrusion-moldable and extruding the heated polyester through a slit; and either (i) orienting the extruded film in the extruding direction or machine direction and a direction perpendicular thereto while the heated aromatic polyester resides in said slit or after it has left the slit but before it is cooled to the glass transition temperature of the polyester, of (ii) orienting the extruded film substantially only in the extruding direction or machine direction while the polyester heated at said temperature resides in the slit, or after it has left the slit but before it is cooled to the glass transition temperature of the polyester, and then re-heating the film to a temperature higher than the glass transition temperature of the polyester, and orienting the film in a direction perpendicular to the machine direction.

摘要翻译： 一种全芳族聚酯的熔融模塑薄膜，所述薄膜在其平面中具有两个垂直交叉方向，其中在25℃下的薄膜的杨氏模量和强度为至少约200kg / mm2，并且至少约 5kg / mm2时，膜的杨氏模量在两个方向上的乘积为至少8×10 4（kg / mm 2）2，并且所述全芳族聚酯基本上是线性的，在约熔点为 至少约10000泊，并且基本上由衍生自对羟基苯甲酸的重复单元组成，源自m-取代的芳族二羧酸的重复单元和衍生自m-取代的芳族二羟基化合物的重复单元， 衍生自对羟基苯甲酸的所述重复单元的比例为约30至约70摩尔％，基于整个重复单元。 本发明还提供了一种制备所述薄膜的方法，该方法包括将上述全芳族聚酯加热到高于聚酯可挤塑成型的温度，并通过狭缝挤出加热的聚酯; 并且（i）在加热的芳族聚酯驻留在所述狭缝中或者在已经离开狭缝之后但在冷却至聚酯的玻璃化转变温度之前，将挤出膜定向在挤出方向或机器方向和垂直于其的方向上 ，（ii）基本上仅在挤出方向或机器方向上定向挤出膜，而在所述温度下加热的聚酯驻留在狭缝中，或者在已经离开狭缝之后但在冷却至聚酯的玻璃化转变温度之前 ，然后将膜再加热到高于聚酯的玻璃化转变温度的温度，并使膜沿垂直于机器方向的方向取向。

公开(公告)号：US4292151A

公开(公告)日：1981-09-29

申请号：US15798

申请日：1979-02-27

申请人： Hiroo Inata ,  Makoto Ogasawara ,  Tsuto Morinaga ,  Akihiro Horike

发明人： Hiroo Inata ,  Makoto Ogasawara ,  Tsuto Morinaga ,  Akihiro Horike

IPC分类号： C08F283/02 ,  C08F299/04 ,  C08G63/668 ,  C08L67/02 ,  C08G63/16

CPC分类号： C08F299/0421 ,  C08F283/02 ,  C08G63/668

摘要： A process for preparing a cured copolyetherester elastomeric composition comprising following steps I and II:Step I: melt-extruding an uncured linear copolyetherester elastomeric composition of [A] and [B] to follow:[A] a linear copolyetherester elastomer composed of(A-1) a hard segment consisting of(i) an acid component of which at least 70 mol % is an aromatic dicarboxylic acid and(ii) a diol component having an average molecular weight of up to 350 and(A-2) a soft segment consisting of(iii) a polyalkylene glycol having an average molecular weight of from 500 to 5,000 in an amount of from 10 to 80% by weight based on the elastomer [A]; and[B] a compound having an unsaturated aliphatic moiety other than unsaturated conjugated moieties, said compound [B] being copolymerized or blended with said elastomer [A], wherein said unsaturated aliphatic moiety is chemically inert at the melt-extruding temperature, the amount of said moiety being 0.001 to 0.5 equivalent per 100 grams of said elastomer [A]Step II: curing the resulting extrudate by irradiation of actinic light.

摘要翻译： 制备固化的共聚醚酯弹性体组合物的方法，包括以下步骤I和II：步骤I：熔融挤出[A]和[B]的未固化的线性共聚醚酯弹性体组合物：[A]由（A -1）由（i）至少70mol％为芳族二羧酸的酸成分和（ii）平均分子量高达350的二醇组分和（A-2）软的 由（ⅲ）基于弹性体[A]的平均分子量为500至5,000的聚亚烷基二醇，其量为10-80重量％。 和[B]具有不饱和共轭部分以外的不饱和脂肪族部分的化合物，所述化合物[B]与所述弹性体[A]共聚或共混，其中所述不饱和脂肪族部分在熔融挤出温度下化学惰性， 所述部分为0.001至0.5当量/ 100克所述弹性体[A]步骤II：通过光化光照射固化所得挤出物。

公开(公告)号：US4196066A

公开(公告)日：1980-04-01

申请号：US920834

申请日：1978-06-30

申请人： Hiroo Inata ,  Makoto Ogasawara ,  Tsuto Morinaga ,  Akihiro Norike

发明人： Hiroo Inata ,  Makoto Ogasawara ,  Tsuto Morinaga ,  Akihiro Norike

IPC分类号： C08G63/58 ,  C08G63/91 ,  C08L67/06 ,  C08F8/00 ,  C08G18/00

CPC分类号： C08L67/06 ,  C08G63/58 ,  C08G63/916

摘要： A cured or uncured linear aromatic polyester composition melt-blended and composed of(A) 100 parts by weight of a saturated linear aromatic polyester in which at least 70 mole % of the acid component consists of an aromatic dicarboxylic acid, and(B) 0.1 to 50 parts by weight of a reactive compound which is solid at room temperature or is a liquid having a boiling point of at least 200.degree. C. under atmospheric pressure, and which contains in its molecule at least one aliphatic unsaturated group substantially non-reactive with the polyester (A) and the aliphatic unsaturated group of the reactive compound (B) under conditions of melt-blending with the polyester (A) and at least one epoxy group reactive with the polyester (A) under the melt-blending conditions. The cured linear aromatic polyester composition can be prepared by extruding the uncured linear aromatic polyester composition under melting conditions, and subjecting the resulting extrudate to a curing treatment.

摘要翻译： 固化或未固化的线性芳族聚酯组合物熔融共混并由（A）100重量份的饱和直链芳族聚酯组成，其中至少70摩尔％的酸组分由芳族二羧酸组成，和（B）0.1 至50重量份在室温下为固体的反应性化合物或在大气压下为沸点为至少200℃的液体，并且其在其分子中含有至少一个基本上不反应的脂族不饱和基团 与聚酯（A）的熔融共混条件下的聚酯（A）和反应性化合物（B）的脂肪族不饱和基团和至少一种与聚酯（A）反应的环氧基团在熔融共混条件下进行。 固化的线性芳族聚酯组合物可以通过在熔融条件下挤出未固化的线性芳族聚酯组合物并将所得挤出物进行固化处理来制备。

公开(公告)号：US4331697A

公开(公告)日：1982-05-25

申请号：US183377

申请日：1980-09-02

申请人： Akira Kudo ,  Hiroo Inata ,  Makoto Ogasawara

发明人： Akira Kudo ,  Hiroo Inata ,  Makoto Ogasawara

IPC分类号： A61L33/00 ,  C08B37/00 ,  A01N1/02

CPC分类号： C08B37/0075 ,  A61L33/0011

摘要： A heparin derivative in which at least 0.5% of the entire hydroxyl groups of heparin are in the form of an ester of the following formula ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 each represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; a method for producing aforesaid heparin derivative which comprises reacting heparin with a halide or anhydride of an unsaturated carboxylic acid of the formula ##STR2## wherein R.sub.1, R.sub.2 and R.sub.3 are the same as defined above; and a method for imparting antithrombotic activity to a biomedical material, which comprises treating that surface of the biomedical material which makes contact with the blood with actinic light in the presence of aforesaid heparin derivative.

摘要翻译： 肝素衍生物，其中肝素的整个羟基的至少0.5％为下式的酯形式（Ⅰ），其中R1，R2和R3各自表示氢原子或具有1个 至6个碳原子; 一种制备上述肝素衍生物的方法，其包括使肝素与式IMAIm不饱和羧酸的卤化物或酸酐反应，其中R1，R2和R3与上述定义相同; 以及向生物医学材料施加抗血栓活性的方法，其包括在上述肝素衍生物的存在下用光化学光处理与血液接触的生物医学材料的表面。

公开(公告)号：US4269947A

公开(公告)日：1981-05-26

申请号：US78680

申请日：1979-09-25

申请人： Hiroo Inata ,  Makoto Ogasawara ,  Tsuto Morinaga ,  Akihiro Norike

发明人： Hiroo Inata ,  Makoto Ogasawara ,  Tsuto Morinaga ,  Akihiro Norike

IPC分类号： C08G63/58 ,  C08G63/91 ,  C08L67/06 ,  C08J3/28

CPC分类号： C08G63/916 ,  C08G63/58 ,  C08K5/16 ,  C08K5/34 ,  C08L67/06

摘要： A cured or uncured linear aromatic polyester composition melt-blended and composed of(A) 100 parts by weight of a saturated linear aromatic polyester in which at least 70 mole % of the acid component consists of an aromatic dicarboxylic acid, and(B) 0.1 to 50 parts by weight of a reactive compound which is solid at room temperature or is a liquid having a boiling point of at least 200.degree. C. under atmospheric pressure, and which contains in its molecule at least one aliphatic unsaturated group substantially non-reactive with the polyester (A) and the aliphatic unsaturated group of the reactive compound (B) under conditions of melt-blending with the polyester (A) and at least one epoxy group reactive with the polyester (A) under the melt-blending conditions. The cured linear aromatic polyester composition can be prepared by extruding the uncured linear aromatic polyester composition under melting conditions, and subjecting the resulting extrudate to a curing treatment.

摘要翻译： 固化或未固化的线性芳族聚酯组合物熔融共混并由（A）100重量份的饱和直链芳族聚酯组成，其中至少70摩尔％的酸组分由芳族二羧酸组成，和（B）0.1 至50重量份在室温下为固体的反应性化合物或在大气压下为沸点为至少200℃的液体，并且其在其分子中含有至少一个基本上不反应的脂族不饱和基团 与聚酯（A）的熔融共混条件下的聚酯（A）和反应性化合物（B）的脂肪族不饱和基团和至少一种与聚酯（A）反应的环氧基团在熔融共混条件下进行。 固化的线性芳族聚酯组合物可以通过在熔融条件下挤出未固化的线性芳族聚酯组合物并将所得挤出物进行固化处理来制备。

公开(公告)号：US06169324A

公开(公告)日：2001-01-02

申请号：US09413754

申请日：1999-10-06

申请人： Jun Sugiura ,  Osamu Tsuchiya ,  Makoto Ogasawara ,  Fumio Ootsuka ,  Kazuyoshi Torii ,  Isamu Asano ,  Nobuo Owada ,  Mitsuaki Horiuchi ,  Tsuyoshi Tamaru ,  Hideo Aoki ,  Nobuhiro Otsuka ,  Seiichirou Shirai ,  Masakazu Sagawa ,  Yoshihiro Ikeda ,  Masatoshi Tsuneoka ,  Toru Kaga ,  Tomotsugu Shimmyo ,  Hidetsugu Ogishi ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Wakahara ,  Hiroyuki Akimori ,  Sinichi Suzuki ,  Keisuke Funatsu ,  Yoshinao Kawasaki ,  Tunehiko Tubone ,  Takayoshi Kogano ,  Ken Tsugane

发明人： Jun Sugiura ,  Osamu Tsuchiya ,  Makoto Ogasawara ,  Fumio Ootsuka ,  Kazuyoshi Torii ,  Isamu Asano ,  Nobuo Owada ,  Mitsuaki Horiuchi ,  Tsuyoshi Tamaru ,  Hideo Aoki ,  Nobuhiro Otsuka ,  Seiichirou Shirai ,  Masakazu Sagawa ,  Yoshihiro Ikeda ,  Masatoshi Tsuneoka ,  Toru Kaga ,  Tomotsugu Shimmyo ,  Hidetsugu Ogishi ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Wakahara ,  Hiroyuki Akimori ,  Sinichi Suzuki ,  Keisuke Funatsu ,  Yoshinao Kawasaki ,  Tunehiko Tubone ,  Takayoshi Kogano ,  Ken Tsugane

IPC分类号： H01L2144

CPC分类号： H01L27/10852 ,  G03F7/70333 ,  G03F9/70 ,  H01L21/28512 ,  H01L21/76 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/823807 ,  H01L23/291 ,  H01L23/4951 ,  H01L23/5258 ,  H01L23/532 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0922 ,  H01L27/0928 ,  H01L27/10808 ,  H01L28/40 ,  H01L2223/54473 ,  H01L2224/05554 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  Y10S257/90 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel stopper regions over the principal surface portions below the element separating insulating film of the substrate by introducing an impurity into all the surface portions including the active regions and the inactive regions of the substrate after the first mask and the second mask have been removed.

摘要翻译： 这里公开了一种半导体集成电路器件制造工艺，用于在由分离绝缘膜和沟道阻挡区域形成的无源区域围绕的衬底的这些有源区的主表面上形成MISFET，其包括：形成步骤 通过不可氧化掩模的第一掩模和顺序地在衬底的有源区的主表面上的蚀刻掩模; 分别通过比第一掩模的不可氧化掩模和蚀刻掩模更薄的不可氧化掩模在第一掩模的侧壁上自对准形成第二掩模的步骤; 通过使用第一掩模和第二掩模蚀刻衬底的非活性区的主表面的步骤; 通过使用第一掩模和第二掩模的氧化在衬底的无活性区域的主表面上形成元件分离绝缘膜的步骤; 以及通过在第一掩模之后将杂质引入到包括基板的有源区域和非活性区域的全部表面部分中而在基板的元件分离绝缘膜下方的主表面部分上形成沟道阻挡区域的步骤， 面具已被删除。

公开(公告)号：US5780882A

公开(公告)日：1998-07-14

申请号：US456788

申请日：1995-06-01

申请人： Jun Sugiura ,  Osamu Tsuchiya ,  Makoto Ogasawara ,  Fumio Ootsuka ,  Kazuyoshi Torii ,  Isamu Asano ,  Nobuo Owada ,  Mitsuaki Horiuchi ,  Tsuyoshi Tamaru ,  Hideo Aoki ,  Nobuhiro Otsuka ,  Seiichirou Shirai ,  Masakazu Sagawa ,  Yoshihiro Ikeda ,  Masatoshi Tsuneoka ,  Toru Kaga ,  Tomotsugu Shimmyo ,  Hidetsugu Ogishi ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Wakahara ,  Hiroyuki Akimori ,  Sinichi Suzuki ,  Keisuke Funatsu ,  Yoshinao Kawasaki ,  Tunehiko Tubone ,  Takayoshi Kogano ,  Ken Tsugane

发明人： Jun Sugiura ,  Osamu Tsuchiya ,  Makoto Ogasawara ,  Fumio Ootsuka ,  Kazuyoshi Torii ,  Isamu Asano ,  Nobuo Owada ,  Mitsuaki Horiuchi ,  Tsuyoshi Tamaru ,  Hideo Aoki ,  Nobuhiro Otsuka ,  Seiichirou Shirai ,  Masakazu Sagawa ,  Yoshihiro Ikeda ,  Masatoshi Tsuneoka ,  Toru Kaga ,  Tomotsugu Shimmyo ,  Hidetsugu Ogishi ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Wakahara ,  Hiroyuki Akimori ,  Sinichi Suzuki ,  Keisuke Funatsu ,  Yoshinao Kawasaki ,  Tunehiko Tubone ,  Takayoshi Kogano ,  Ken Tsugane

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/336 ,  H01L21/76 ,  H01L21/768 ,  H01L21/8238 ,  H01L21/8242 ,  H01L23/29 ,  H01L23/495 ,  H01L23/525 ,  H01L23/532 ,  H01L23/544 ,  H01L27/092 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  H01L27/02

CPC分类号： H01L27/10852 ,  G03F7/70333 ,  G03F9/70 ,  H01L21/28512 ,  H01L21/76 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/823807 ,  H01L23/291 ,  H01L23/4951 ,  H01L23/5258 ,  H01L23/532 ,  H01L23/544 ,  H01L27/0922 ,  H01L28/40 ,  H01L2223/54473 ,  H01L2224/05554 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0928 ,  H01L27/10808 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  Y10S257/90

摘要： Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel stopper regions over the principal surface portions below the element separating insulating film of the substrate by introducing an impurity into all the surface portions including the active regions and the inactive regions of the substrate after the first mask and the second mask have been removed.