摘要:
A pattern checking method wherein an image of a certain position of one pattern is detected; the detected image is positioned with respect to an image of a position corresponding to the certain position, in a reference pattern image; and the positioned images are compared with each other, whereby a discrepant place among these positioned images is judged as a defect the positioning operations of the images of the detected patterns are controlled based upon either pattern information such as density of the images of the detected patterns, or information obtained from the positioning operations for images of other positions in the patterns. An image sensor unit for detecting images of patterns is constructed which has such a structure that a plurality of one-dimensional image sensors functioning as a pattern detector are arranged in a two-dimensional form, and an output of a certain one-dimensional image sensor for imaging a certain position of one pattern is delayed for a predetermined time period, and also both of an output of an one-dimensional image sensor adjoining the first-mentioned one-dimensional image sensor, which images the same position of the same pattern, and the delayed output of the certain one-dimensional image sensor are sequentially added to derive a summation output. The image sensor unit is inclined at a predetermined angle with respect to a plane perpendicular to the reflection light from the patterns, and the reflection light from the patterns is focused via a confocal focusing optical system onto this image sensor unit.
摘要:
A pattern checking method wherein an image of a certain position of one pattern is detected; the detected image is positioned with respect to an image of a position corresponding to the certain position, in a reference pattern image; and the positioned images are compared with each other, whereby a discrepant place among these positioned images is judged as a defect the positioning operations of the images of the detected patterns are controlled based upon either pattern information such as density of the images of the detected patterns, or information obtained from the positioning operations for images of other positions in the patterns. An image sensor unit for detecting images of patterns is constructed which has such a structure that a plurality of one-dimensional image sensors functioning as a pattern detector are arranged in a two-dimensional form, and an output of a certain one-dimensional image sensor for imaging a certain position of one pattern is delayed for a predetermined time period, and also both of an output of an one-dimensional image sensor adjoining the first-mentioned one-dimensional image sensor, which images the same position of the same pattern, and the delayed output of the certain one-dimensional image sensor are sequentially added to derive a summation output. The image sensor unit is inclined at a predetermined angle with respect to a plane perpendicular to the reflection light from the patterns, and the reflection light from the patterns is focused via a confocal focusing optical system onto this image sensor unit.
摘要:
The inventive pattern detection method and apparatus produce, from an optical image of a pattern in attention and an optical image of a pattern which should be identical to the pattern in attention, an optical image by merging the images, with a relative phase shift being imposed, and pattern information is detected or observed in the merged optical image or a signal produced from the optical image through the conversion with an opto-electric transducer means.
摘要:
A method and apparatus for detecting a defect in a circuit pattern by detecting a gray image signal from each of a plurality of circuit patterns as objects of inspection, which circuit patterns have been fabricated so as to be identical with one another, and detecting a defect as a difference of edge position between two circuit patterns by comparing the detected gray image signal of one circuit pattern with the detected gray image signal of another circuit pattern.
摘要:
Method of and apparatus for checking the geometry of multi-layer patterns for IC structures having identical functions, each of the multi-layer patterns including layer patterns arranged in different level layers, wherein electrical image signals corresponding to any two of the multi-layer patterns and having more than two levels are registered with each other and then compared to determine unmatched and matched portions. The comparison of the registered electric image signals may be performed with respect to their amplitude or their gradients. The registration and comparison of two electric image signals may be repeated for all of the layer patterns with the matched portions being no longer subjected to the registration and comparison. A defect detection signal is produced from finally unmatched portions, if any, of the electric image signals having undergone the said registration and comparison.
摘要:
A method of auto-focusing suitable for fine patterns of LSIs and an apparatus therefor, particularly applied for checking the geometry of a circuit pattern of a semiconductor device formed on an LSI wafer. A stripe pattern is projected on a specified location on an object to be checked and contrast of an image of the stripe pattern is used for focusing. The specified location is imaged by an optical system and detected simultaneously by two detectors. A position at which contrast of an output signal of one detector coincides with that of the other detector is determined to be an in-focus position. Am image of a multi-layer pattern representative of the circuit pattern is focused on another detector disposed at the in-focus position and detected for checking. The output signal of the detector is divided by mean brightness of the stripe pattern image so as to be normalized. Since the two detectors produce their output signals simultaneously, the difference between the output signals is normalized to improve accuracies of computation.
摘要:
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要:
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要:
To make possible the in-line inspection of a pattern of an insulating material.A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current is emitted from an electron gun 11 and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector 16 thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit 32 and a defect determining unit 33. Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.
摘要:
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.