SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20110309368A1

    公开(公告)日:2011-12-22

    申请号:US13223582

    申请日:2011-09-01

    IPC分类号: H01L33/08

    摘要: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

    摘要翻译: 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件,电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置,可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化,或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20090283775A1

    公开(公告)日:2009-11-19

    申请号:US12506465

    申请日:2009-07-21

    IPC分类号: H01L33/00

    摘要: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

    摘要翻译: 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件,电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置,可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化,或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号:US20110233557A1

    公开(公告)日:2011-09-29

    申请号:US13108021

    申请日:2011-05-16

    IPC分类号: H01L33/16

    摘要: The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.

    摘要翻译: 本发明的目的是提供一种发光装置,其包括形成在塑料基板上的OLED,其能够防止由于水分或氧气的渗透而导致的劣化。 在塑料基板上,用于防止氧或水分渗入OLED中的有机发光层的多个膜(以下称为阻挡膜)和具有比阻挡膜的应力小的膜(以下称为“ 被称为应力缓和膜),膜被插入在阻挡膜之间。 由于多个阻挡膜的层压结构,即使在一个阻挡膜中发生裂纹,另一个阻挡膜可以有效地防止水分或氧气渗入有机发光层。 此外,在阻挡膜之间插入有比阻挡膜小的应力的应力缓和膜,从而可以减小整个密封膜的应力。 结果,几乎不发生由于应力引起的裂纹。