LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号:US20110210324A1

    公开(公告)日:2011-09-01

    申请号:US12869327

    申请日:2010-08-26

    IPC分类号: H01L33/16

    摘要: It is an object to provide a light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors corresponding to characteristics of the plural kinds of circuits are provided. An inverted coplanar thin film transistor in which an oxide semiconductor layer overlaps with a source electrode layer and a drain electrode layer is used for a pixel, and a channel-etched thin film transistor is used for a driver circuit. A color filter layer is provided between the pixel thin film transistor and a light-emitting element which is electrically connected to the pixel thin film transistor so as to overlap with the light-emitting element.

    摘要翻译: 本发明的目的是提供一种在一个衬底上形成多种电路的发光器件,并且提供与多种电路的特性对应的多种薄膜晶体管。 将其中与源电极层和漏电极层重叠的氧化物半导体层用于像素的反转共面薄膜晶体管,并且将沟道蚀刻薄膜晶体管用于驱动器电路。 像素薄膜晶体管和与像素薄膜晶体管电连接以与发光元件重叠的发光元件设置滤色器层。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号:US20110210325A1

    公开(公告)日:2011-09-01

    申请号:US12871148

    申请日:2010-08-30

    IPC分类号: H01L29/786 H01L21/336

    摘要: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

    摘要翻译: 半导体器件包括驱动器电路部分,其包括驱动器电路和包括像素的像素部分。 像素包括具有透光性的栅极电极层,栅极绝缘层,源极电极层和漏极电极层,其各自具有设置在栅极绝缘层上的透光性,覆盖顶表面的氧化物半导体层和 源极电极层和漏极电极层的侧面,并且在栅电极层之间设置有栅极绝缘层,导电层设置在氧化物半导体层的一部分上,并且具有比源电极层和漏极 电极层和与氧化物半导体层的一部分接触的氧化物绝缘层。

    LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    8.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    液晶显示装置及其制造方法

    公开(公告)号:US20110058116A1

    公开(公告)日:2011-03-10

    申请号:US12871162

    申请日:2010-08-30

    IPC分类号: H01L33/08 H01L33/28

    CPC分类号: H01L27/1225

    摘要: An object is to provide an active matrix liquid crystal display device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors are provided corresponding to characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor including an oxide semiconductor layer which is over and overlaps with a source electrode layer and a drain electrode layer is used for a pixel thin film transistor. A channel-protective thin film transistor is used for a driver-circuit thin film transistor is used. In addition, main parts of the pixel thin film transistor are formed using a light-transmitting material, so that the aperture ratio is increased.

    摘要翻译: 本发明提供一种有源矩阵液晶显示装置,其中在一个基板上形成多种电路,并且根据多种电路的特性设置多种薄膜晶体管。 包括与源电极层和漏电极层重叠的氧化物半导体层的倒共面薄膜晶体管用于像素薄膜晶体管。 使用通道保护薄膜晶体管用于驱动电路薄膜晶体管。 此外,使用透光材料形成像素薄膜晶体管的主要部分,使得开口率增加。

    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号:US20110057187A1

    公开(公告)日:2011-03-10

    申请号:US12871184

    申请日:2010-08-30

    IPC分类号: H01L33/00 H01L21/02

    摘要: An object of the present invention is to provide a light-emitting device in which plural kinds of circuits are formed over the same substrate, and plural kinds of thin film transistors are provided in accordance with characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor, an oxide semiconductor layer of which overlaps with a source and drain electrode layers, and a channel-etched thin film transistor are used as a thin film transistor for a pixel and a thin film transistor for a driver circuit, respectively. Between the thin film transistor for a pixel and a light-emitting element, a color filter layer is provided so as to overlap with the light-emitting element which is electrically connected to the thin film transistor for a pixel.

    摘要翻译: 本发明的目的是提供一种在同一基板上形成多种电路的发光器件,并且根据多种电路的特性提供多种薄膜晶体管。 作为用于像素的薄膜晶体管和用于驱动电路的薄膜晶体管,使用反向共面薄膜晶体管,其与源极和漏极层重叠的氧化物半导体层和沟道蚀刻薄膜晶体管 , 分别。 在用于像素的薄膜晶体管和发光元件之间,设置滤色器层,以与与像素的薄膜晶体管电连接的发光元件重叠。