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    Manufacturing method for a thin film transistor that uses a pulse oscillation laser crystallize an amorphous semiconductor film
    2.
    发明授权
    Manufacturing method for a thin film transistor that uses a pulse oscillation laser crystallize an amorphous semiconductor film 有权
    使用脉冲振荡激光器的薄膜晶体管的制造方法使非晶半导体膜结晶化

    公开(公告)号：US07510920B2

    公开(公告)日：2009-03-31

    申请号：US11285012

    申请日：2005-11-23

    申请人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

    发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

    IPC分类号： H01L21/84

    CPC分类号： H01L21/02686 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L23/544 ,  H01L27/1285 ,  H01L29/04 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More specifically, there is provided a manufacturing method for a semiconductor device, in which crystal having a large grain size can be continuously formed through super lateral growth that is artificially controlled and substrate processing efficiency during a laser crystallization process can be increased. In the manufacturing method for a semiconductor device, instead of performing laser irradiation on an entire semiconductor film within a substrate surface, a marker as a reference for positioning is formed so as to crystallize at least an indispensable portion at minimum. Thus, a time period required for laser crystallization can be reduced to make it possible to increase a processing speed for a substrate. The above structure is applied to a conventional SLS method, so that it is possible to solve a problem inherent to the conventional SLS method, in that the substrate processing efficiency is poor.

    摘要翻译： 实现了根据TFT的布置的晶粒的位置控制，并且同时提高了结晶过程中的处理速度。 更具体地，提供了一种半导体器件的制造方法，其中可以通过人工控制的超横向生长连续地形成具有大晶粒尺寸的晶体，并且可以增加激光晶化过程中的衬底处理效率。 在半导体器件的制造方法中，代替对基板表面内的整个半导体膜进行激光照射，形成用于定位的基准的标记，以至少使至少不可缺少的部分结晶。 因此，可以减少激光结晶所需的时间，从而可以提高基板的处理速度。 上述结构应用于传统的SLS方法，从而可以解决常规SLS方法固有的问题，因为衬底处理效率差。

    Method of manufacturing a semiconductor device
    9.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US06962860B2

    公开(公告)日：2005-11-08

    申请号：US10289219

    申请日：2002-11-07

    申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

    发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

    IPC分类号： G02F1/1368 ,  B23K26/073 ,  H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

    CPC分类号： H01L21/02691 ,  B23K26/0732 ,  B23K26/0736 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/67282 ,  H01L21/67294 ,  H01L27/1285

    摘要： To provide a continuous-oscillating laser apparatus capable of improving the efficiency of substrate treatment, a method of irradiating a laser beam, and a method of manufacturing a semiconductor device using the laser apparatus. Of the entire semiconductor film, a portion that needs to be left on the substrate after patterning is identified according to a mask. Then, a portion to be scanned by respective lasers are defined, so that a laser beam is irradiated twice in different scanning directions to a portion to be obtained at least through patterning and beam spots are impinged upon the scanned portion, thereby partially crystallizing the semiconductor film. In other words, in the invention, it is arranged in such a manner that a laser beam is not irradiated by scanning a laser beam across the entire semiconductor film but by scanning a laser beam twice at least to the absolutely necessary portion. According to the above arrangement, it is possible to save the time to irradiate a laser beam in waste to the semiconductor film at a portion to be removed through patterning, and the crystalline characteristics of the semiconductor film obtained after the patterning can be further enhanced.

    摘要翻译： 为了提供能够提高基板处理效率的连续振荡激光装置，照射激光的方法以及使用该激光装置制造半导体装置的方法。 在整个半导体膜中，根据掩模来识别在图案化之后需要留在基板上的部分。 然后，定义要由相应激光器扫描的部分，使得激光束在不同的扫描方向上被照射到要获得的部分两次，至少通过图案化并且光束点被照射在扫描部分上，从而部分地使半导体 电影。 换句话说，在本发明中，其布置成使得激光束不通过扫描整个半导体膜上的激光束而被照射，而是通过至少对绝对必需部分进行两次扫描激光束而被照射。 根据上述结构，通过图案化，可以节省在要除去的部分向半导体膜照射浪费的激光的时间，并且可以进一步提高在图案化之后获得的半导体膜的结晶特性。