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    Display device, manufacturing method thereof, and television set
    1.
    发明授权
    Display device, manufacturing method thereof, and television set 有权
    显示装置及其制造方法以及电视机

    公开(公告)号：US07564058B2

    公开(公告)日：2009-07-21

    申请号：US11187988

    申请日：2005-07-25

    申请人： Shunpei Yamazaki ,  Hironobu Shoji ,  Shinji Maekawa ,  Osamu Nakamura ,  Tatsuya Honda ,  Gen Fujii ,  Yukie Suzuki ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Hironobu Shoji ,  Shinji Maekawa ,  Osamu Nakamura ,  Tatsuya Honda ,  Gen Fujii ,  Yukie Suzuki ,  Ikuko Kawamata

    IPC分类号： H01L27/14

    CPC分类号： H01L21/02667 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/124 ,  H01L27/1277 ,  H01L27/1292 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L51/56

    摘要： A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a gate electrode layer and a pixel electrode layer formed over an insulating surface, a gate insulating layer formed over the gate electrode layer, a crystalline semiconductor layer formed over the gate insulating layer, a semiconductor layer having one conductivity type formed in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer formed in contact with the semiconductor layer having one conductivity type, an insulating later formed over the source electrode layer, the drain electrode layer, and the pixel electrode layer, a first opening formed in the insulating layer to reach the source electrode layer or the drain electrode layer, a second opening formed in the gate insulating layer and the insulating layer to reach the pixel electrode layer, and a wiring layer formed in the first opening and the second opening to electrically connect the source electrode layer or the drain electrode layer to the pixel electrode layer.

    摘要翻译： 提供了具有能够以极小的阈值电压变化进行高速运行的TFT的显示装置的制造方法，其中以高效率使用材料并且需要少量的光掩模。 本发明的显示装置包括形成在绝缘表面上的栅极电极层和像素电极层，形成在栅极电极层上的栅极绝缘层，形成在栅极绝缘层上的结晶半导体层，具有一个导电性的半导体层 形成为与结晶半导体层接触的类型，源电极层和漏极电极层，形成为与具有一种导电类型的半导体层接触，在源极电极层，漏极电极层和像素电极之后形成绝缘体 在所述绝缘层中形成的第一开口到达所述源极电极层或所述漏极电极层，形成在所述栅极绝缘层和所述绝缘层中的第二开口到达所述像素电极层;以及布线层， 开口和第二开口以电连接源极电极层或漏极电极 呃到像素电极层。

    Television, electronic apparatus, and method of fabricating semiconductor device
    3.
    发明申请
    Television, electronic apparatus, and method of fabricating semiconductor device 有权
    电视机，电子设备以及制造半导体器件的方法

    公开(公告)号：US20060189047A1

    公开(公告)日：2006-08-24

    申请号：US11193513

    申请日：2005-08-01

    申请人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

    IPC分类号： H01L21/84

    CPC分类号： H01L27/1277 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1288

    摘要： [Object] The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials. [Means for Solving the Problem] According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the amorphous semiconductor film to form a crystalline semiconductor film, forming a layer containing a donor element or a rare gas element over the crystalline semiconductor film and heating the layer to remove the catalytic element from the crystalline semiconductor film, forming a semiconductor region by utilizing a part of the crystalline semiconductor film, forming a source electrode and a drain electrode to be electrically connected to the semiconductor region, and forming a gate wiring to be connected to the gate electrode.

    摘要翻译： 本发明提供了一种制造具有能够高速操作的反交错TFT的半导体器件的方法，其具有极小的阈值变化。 此外，本发明提供了一种制造具有高产量的半导体器件的方法，其中通过少量材料实现成本降低。 解决问题的手段根据本发明，通过形成逆交错TFT来制造半导体器件，该TFT是使用高耐热材料形成栅电极，沉积非晶半导体膜，将催化元素添加到 非晶半导体膜并加热非晶半导体膜以形成晶体半导体膜，在结晶半导体膜上形成包含施主元素或稀有气体元素的层，并加热该层从结晶半导体膜除去催化元素，形成 通过利用晶体半导体膜的一部分形成半导体区域，形成与半导体区域电连接的源电极和漏电极，以及形成与栅电极连接的栅极布线。

    Method of fabricating a semiconductor device including separately forming a second semiconductor film containing an impurity element over the first semiconductor region
    4.
    发明授权
    Method of fabricating a semiconductor device including separately forming a second semiconductor film containing an impurity element over the first semiconductor region 有权
    制造半导体器件的方法包括在第一半导体区域上分别形成含有杂质元素的第二半导体膜

    公开(公告)号：US07648861B2

    公开(公告)日：2010-01-19

    申请号：US11193513

    申请日：2005-08-01

    申请人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1277 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1288

    摘要： The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials.According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the amorphous semiconductor film to form a crystalline semiconductor film, forming a layer containing a donor element or a rare gas element over the crystalline semiconductor film and heating the layer to remove the catalytic element from the crystalline semiconductor film, forming a semiconductor region by utilizing a part of the crystalline semiconductor film, forming a source electrode and a drain electrode to be electrically connected to the semiconductor region, and forming a gate wiring to be connected to the gate electrode.

    摘要翻译： 本发明提供一种制造半导体器件的方法，该半导体器件具有能够高速操作的反交错TFT，其阈值变化很小。 此外，本发明提供了一种制造具有高产量的半导体器件的方法，其中通过少量材料实现成本降低。 根据本发明，通过形成反交错的TFT来制造半导体器件，该TFT通过使用高耐热材料形成栅电极，沉积非晶半导体膜，向非晶半导体膜中加入催化元素并加热 非晶半导体膜以形成晶体半导体膜，在结晶半导体膜上形成包含施主元素或稀有气体元素的层，并加热该层从结晶半导体膜除去催化元素，通过利用部分形成半导体区域 形成与半导体区域电连接的源电极和漏电极，形成与栅电极连接的栅极布线。

    Semiconductor device and manufacturing method thereof
    9.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08890152B2

    公开(公告)日：2014-11-18

    申请号：US13495313

    申请日：2012-06-13

    申请人： Shunpei Yamazaki ,  Tatsuya Honda

    发明人： Shunpei Yamazaki ,  Tatsuya Honda

    IPC分类号： H01L29/04 ,  H01L29/786 ,  H01L29/778 ,  H01L29/267

    CPC分类号： H01L29/7869 ,  H01L29/045 ,  H01L29/24 ,  H01L29/267 ,  H01L29/7782 ,  H01L29/78609 ,  H01L29/78696

    摘要： One object of the present invention is to provide a structure of a transistor including an oxide semiconductor in a channel formation region in which the threshold voltage of electric characteristics of the transistor can be positive, which is a so-called normally-off switching element, and a manufacturing method thereof. A second oxide semiconductor layer which has greater electron affinity and a smaller energy gap than a first oxide semiconductor layer is formed over the first oxide semiconductor layer. Further, a third oxide semiconductor layer is formed to cover side surfaces and a top surface of the second oxide semiconductor layer, that is, the third oxide semiconductor layer covers the second oxide semiconductor layer.

    摘要翻译： 本发明的一个目的是提供在晶体管的电特性的阈值电压可以为正的沟道形成区域中的包括氧化物半导体的晶体管的结构，其是所谓的常关断开关元件， 及其制造方法。 在第一氧化物半导体层上形成具有比第一氧化物半导体层更大的电子亲和力和更小的能隙的第二氧化物半导体层。 此外，形成第三氧化物半导体层以覆盖第二氧化物半导体层的侧表面和顶表面，即，第三氧化物半导体层覆盖第二氧化物半导体层。

    Semiconductor device and manufacturing method thereof
    10.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08569754B2

    公开(公告)日：2013-10-29

    申请号：US13285385

    申请日：2011-10-31

    申请人： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takatsugu Omata ,  Tatsuya Honda ,  Akiharu Miyanaga ,  Hiroki Ohara

    发明人： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takatsugu Omata ,  Tatsuya Honda ,  Akiharu Miyanaga ,  Hiroki Ohara

    IPC分类号： H01L29/12

    CPC分类号： H01L29/78693 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/263 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/7869

    摘要： A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a drain electrode layer (or a source electrode layer) and an oxide semiconductor layer such that the end portion of the buffer layer is beyond the side surface of the drain electrode layer (or the source electrode layer) when seen in a cross section, whereby the buffer layer can relieve the concentration of electric field. The buffer layer is a single layer or a stacked layer including a plurality of layers, and includes, for example, an In—Ga—Zn—O film containing nitrogen, an In—Sn—O film containing nitrogen, an In—Sn—O film containing SiOx, or the like.

    摘要翻译： 提供具有新颖结构的半导体器件或半导体器件的制造方法。 例如，提高了以高电压或大电流驱动的晶体管的可靠性。 为了提高晶体管的可靠性，在漏电极层（或源极电极层）和氧化物半导体层之间设置缓冲层，使得缓冲层的端部超出漏电极层的侧面 （或源电极层），从而缓冲层能够缓和电场的集中。 缓冲层是包含多个层的单层或层叠层，例如包含氮的In-Ga-Zn-O膜，含有氮的In-Sn-O膜，In-Sn-O系膜， O膜等。