公开(公告)号：US07473622B2

公开(公告)日：2009-01-06

申请号：US11707094

申请日：2007-02-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L21/20

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。

公开(公告)号：US07179698B2

公开(公告)日：2007-02-20

申请号：US10871380

申请日：2004-06-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶体尺寸较大的结晶半导体膜。

公开(公告)号：US06974731B2

公开(公告)日：2005-12-13

申请号：US09986743

申请日：2001-11-09

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/84 ,  H01L21/36

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。

公开(公告)号：US20070148925A1

公开(公告)日：2007-06-28

申请号：US11707094

申请日：2007-02-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。

公开(公告)号：US06730550B1

公开(公告)日：2004-05-04

申请号：US09635422

申请日：2000-08-10

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L2100

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

公开(公告)号：US07338913B2

公开(公告)日：2008-03-04

申请号：US10406295

申请日：2003-04-04

申请人： Kenji Kasahara ,  Ritsuko Kawasaki ,  Hisashi Ohtani ,  Shunpei Yamazaki

发明人： Kenji Kasahara ,  Ritsuko Kawasaki ,  Hisashi Ohtani ,  Shunpei Yamazaki

IPC分类号： H01L21/26

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78633 ,  H01L29/78675

摘要： A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the amorphous semiconductor film by laser light irradiation. Furthermore, a relationship of 0

摘要翻译： 提供了用于获得具有大晶粒尺寸的晶体半导体膜的激光退火方法。 当通过激光照射使非晶半导体膜结晶时，激光照射到非晶半导体膜的顶表面和底表面。 此外，0 <（I <0> / I> 0 ）<1，或1 <（I / 对于在照射到顶表面时激光的有效能量强度之间的比率（I 0> 0 ）来实现（＆lt; 0＆lt; I＆lt; 0＆gt;）和照射到底面（I 0 0'）时的激光的有效能量强度。

公开(公告)号：US06753212B2

公开(公告)日：2004-06-22

申请号：US09932935

申请日：2001-08-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L2184

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。

公开(公告)号：US06548370B1

公开(公告)日：2003-04-15

申请号：US09640084

申请日：2000-08-17

申请人： Kenji Kasahara ,  Ritsuko Kawasaki ,  Hisashi Ohtani ,  Shunpei Yamazaki

发明人： Kenji Kasahara ,  Ritsuko Kawasaki ,  Hisashi Ohtani ,  Shunpei Yamazaki

IPC分类号： H01L2904

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78633 ,  H01L29/78675

摘要： A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the amorphous semiconductor film by laser light irradiation. Furthermore, a relationship of 0

摘要翻译： 提供了用于获得具有大晶粒尺寸的晶体半导体膜的激光退火方法。 当通过激光照射使非晶半导体膜结晶时，激光照射到非晶半导体膜的顶表面和底表面。 此外，对于照射到顶部的激光的有效能量强度之间的比（I0 / I0'），实现0 <（I0'/ I0）<1或1 <（I0'/ I0）的关系 表面（I0）和当照射到底面（I0'）时激光的有效能量强度

公开(公告)号：US07132687B2

公开(公告)日：2006-11-07

申请号：US10958887

申请日：2004-10-05

申请人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L29/04

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  H01L27/3244 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.

摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。

公开(公告)号：US06426245B1

公开(公告)日：2002-07-30

申请号：US09612100

申请日：2000-07-07

申请人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L2100

CPC分类号： H01L27/12 ,  H01L27/1281 ,  H01L27/1285

摘要： The invention relates to a method for manufacturing a semiconductor device, and it is an object of the invention to form a semiconductor area formed in island-like patterns as a single crystal or an area which can be regarded as a single crystal, and to simultaneously achieve a laminated structure by which various characteristics of TFTs can be stabilized, wherein an insulation film is formed on a glass substrate, and island-like semiconductor layer is formed thereon. A laser beam passed through a cylindrical lens is made into a linear laser beam and irradiated onto the island-like semiconductor layer by an optical system. The island-like semiconductor layer is subjected to two components, one of which is a direct laser beam component passing through the cylindrical lens and being irradiated directly onto the island-like semiconductor layer, and the other of which is a diffused laser beam component transmitting an insulation film and a substrate, being reflected by a reflection plate, and again transmitting the substrate and insulation film and being irradiated onto the island-like semiconductor laser.

摘要翻译： 本发明涉及一种半导体器件的制造方法，其目的在于，形成岛状图案形成的半导体区域，作为单晶体或可以看作单晶面积的区域，同时 实现了能够稳定TFT的各种特性的层压结构，其中在玻璃基板上形成绝缘膜，并且在其上形成岛状半导体层。 通过柱面透镜的激光束被制成线性激光束并通过光学系统照射到岛状半导体层上。 岛状半导体层经受两个部件，其中一个部件是通过柱面透镜的直接激光束部件，并直接照射在岛状半导体层上，另一个部件是扩散激光束分量传输 由反射板反射的绝缘膜和基板，并再次透射基板和绝缘膜并照射到岛状半导体激光器上。