公开(公告)号：US07842589B2

公开(公告)日：2010-11-30

申请号：US12627242

申请日：2009-11-30

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

IPC分类号： H01L21/428 ,  B23K26/12

CPC分类号： H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/123 ,  B23K26/127 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757

摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.

摘要翻译： 根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光，有效地防止了氧和氮混入半导体膜。 因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。 此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。 此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

公开(公告)号：US20060189047A1

公开(公告)日：2006-08-24

申请号：US11193513

申请日：2005-08-01

申请人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

IPC分类号： H01L21/84

CPC分类号： H01L27/1277 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1288

摘要： [Object] The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials. [Means for Solving the Problem] According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the amorphous semiconductor film to form a crystalline semiconductor film, forming a layer containing a donor element or a rare gas element over the crystalline semiconductor film and heating the layer to remove the catalytic element from the crystalline semiconductor film, forming a semiconductor region by utilizing a part of the crystalline semiconductor film, forming a source electrode and a drain electrode to be electrically connected to the semiconductor region, and forming a gate wiring to be connected to the gate electrode.

摘要翻译： 本发明提供了一种制造具有能够高速操作的反交错TFT的半导体器件的方法，其具有极小的阈值变化。 此外，本发明提供了一种制造具有高产量的半导体器件的方法，其中通过少量材料实现成本降低。 解决问题的手段根据本发明，通过形成逆交错TFT来制造半导体器件，该TFT是使用高耐热材料形成栅电极，沉积非晶半导体膜，将催化元素添加到 非晶半导体膜并加热非晶半导体膜以形成晶体半导体膜，在结晶半导体膜上形成包含施主元素或稀有气体元素的层，并加热该层从结晶半导体膜除去催化元素，形成 通过利用晶体半导体膜的一部分形成半导体区域，形成与半导体区域电连接的源电极和漏电极，以及形成与栅电极连接的栅极布线。

公开(公告)号：US07629235B2

公开(公告)日：2009-12-08

申请号：US11471494

申请日：2006-06-21

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

IPC分类号： H01L21/36

CPC分类号： H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/123 ,  B23K26/127 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757

摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.

摘要翻译： 根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光，有效地防止了氧和氮混入半导体膜。 因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。 此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。 此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

公开(公告)号：US20070099440A1

公开(公告)日：2007-05-03

申请号：US11637914

申请日：2006-12-13

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  C30B1/023 ,  C30B1/08 ,  C30B29/06 ,  H01L21/02683 ,  H01L21/2026

摘要： [Object]It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the surface thereof. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laser irradiation apparatus which can suppress the variation of on-current, mobility, and threshold of TFT, and to further provide a semiconductor device manufactured with the manufacturing method. [Solution]A method for manufacturing a semiconductor device comprising the steps of adding the first noble gas to the semiconductor film formed over the insulating surface with the ion doping method and irradiating the semiconductor film with the first noble gas added therein with the laser light in an atmosphere of second noble gas, wherein the magnetic field is applied to the semiconductor film with the first noble gas added when the laser light is irradiated.

摘要翻译： 本发明的目的是提供一种激光照射装置，其能够在抑制半导体膜中的结晶性的变化和其表面状态的不均匀的同时，均匀地结晶半导体膜。 本发明的另一个目的是提供一种使用能够抑制TFT的导通电流，迁移率和阈值的变化的激光照射装置的半导体器件的制造方法，并且进一步提供利用制造制造的半导体器件 方法。 [解决方案]一种半导体器件的制造方法，其特征在于，包括以下步骤：通过离子掺杂法将形成在绝缘表面上的半导体膜添加第一稀有气体，并将其中添加有激光的第一稀土气体照射到半导体膜 第二惰性气体的气氛，其中当照射激光时，将第一稀有气体施加到半导体膜上。

公开(公告)号：US20060237397A1

公开(公告)日：2006-10-26

申请号：US11471494

申请日：2006-06-21

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

IPC分类号： H01L21/36 ,  B23K26/00

CPC分类号： H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/123 ,  B23K26/127 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757

摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.

摘要翻译： 根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光来有效地防止氧和氮混入半导体膜。 因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。 此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。 此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

公开(公告)号：US07067403B2

公开(公告)日：2006-06-27

申请号：US10700516

申请日：2003-11-05

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji ,  Koichiro Tanaka

IPC分类号： H01L21/36

CPC分类号： H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/123 ,  B23K26/127 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757

摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.

公开(公告)号：US07564058B2

公开(公告)日：2009-07-21

申请号：US11187988

申请日：2005-07-25

申请人： Shunpei Yamazaki ,  Hironobu Shoji ,  Shinji Maekawa ,  Osamu Nakamura ,  Tatsuya Honda ,  Gen Fujii ,  Yukie Suzuki ,  Ikuko Kawamata

发明人： Shunpei Yamazaki ,  Hironobu Shoji ,  Shinji Maekawa ,  Osamu Nakamura ,  Tatsuya Honda ,  Gen Fujii ,  Yukie Suzuki ,  Ikuko Kawamata

IPC分类号： H01L27/14

CPC分类号： H01L21/02667 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/124 ,  H01L27/1277 ,  H01L27/1292 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L51/56

摘要： A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a gate electrode layer and a pixel electrode layer formed over an insulating surface, a gate insulating layer formed over the gate electrode layer, a crystalline semiconductor layer formed over the gate insulating layer, a semiconductor layer having one conductivity type formed in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer formed in contact with the semiconductor layer having one conductivity type, an insulating later formed over the source electrode layer, the drain electrode layer, and the pixel electrode layer, a first opening formed in the insulating layer to reach the source electrode layer or the drain electrode layer, a second opening formed in the gate insulating layer and the insulating layer to reach the pixel electrode layer, and a wiring layer formed in the first opening and the second opening to electrically connect the source electrode layer or the drain electrode layer to the pixel electrode layer.

摘要翻译： 提供了具有能够以极小的阈值电压变化进行高速运行的TFT的显示装置的制造方法，其中以高效率使用材料并且需要少量的光掩模。 本发明的显示装置包括形成在绝缘表面上的栅极电极层和像素电极层，形成在栅极电极层上的栅极绝缘层，形成在栅极绝缘层上的结晶半导体层，具有一个导电性的半导体层 形成为与结晶半导体层接触的类型，源电极层和漏极电极层，形成为与具有一种导电类型的半导体层接触，在源极电极层，漏极电极层和像素电极之后形成绝缘体 在所述绝缘层中形成的第一开口到达所述源极电极层或所述漏极电极层，形成在所述栅极绝缘层和所述绝缘层中的第二开口到达所述像素电极层;以及布线层， 开口和第二开口以电连接源极电极层或漏极电极 呃到像素电极层。

公开(公告)号：US07160762B2

公开(公告)日：2007-01-09

申请号：US10701174

申请日：2003-11-05

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  C30B1/023 ,  C30B1/08 ,  C30B29/06 ,  H01L21/02683 ,  H01L21/2026

摘要： It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the surface thereof. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laser irradiation apparatus which can suppress the variation of on-current, mobility, and threshold of TFT, and to further provide a semiconductor device manufactured with the manufacturing method.A method for manufacturing a semiconductor device comprising the steps of adding the first noble gas to the semiconductor film formed over the insulating surface with the ion doping method and irradiating the semiconductor film with the first noble gas added therein with the laser light in an atmosphere of second noble gas, wherein the magnetic field is applied to the semiconductor film with the first noble gas added when the laser light is irradiated.

摘要翻译： 本发明的目的是提供一种激光照射装置，其能够在抑制半导体膜中的结晶性的变化和其表面状态的不均匀性的同时使半导体膜均匀结晶。 本发明的另一个目的是提供一种使用能够抑制TFT的导通电流，迁移率和阈值的变化的激光照射装置的半导体器件的制造方法，并且进一步提供利用制造制造的半导体器件 方法。 一种制造半导体器件的方法，包括以下步骤：用离子掺杂方法将第一稀有气体添加到形成在绝缘表面上的半导体膜上，并且在其中加入第一稀有气体的激光照射半导体膜， 第二惰性气体，其中当照射激光时，在加入了第一稀有气体的情况下将磁场施加到半导体膜。

公开(公告)号：US07648861B2

公开(公告)日：2010-01-19

申请号：US11193513

申请日：2005-08-01

申请人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

IPC分类号： H01L21/00

CPC分类号： H01L27/1277 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1288

摘要： The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials.According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the amorphous semiconductor film to form a crystalline semiconductor film, forming a layer containing a donor element or a rare gas element over the crystalline semiconductor film and heating the layer to remove the catalytic element from the crystalline semiconductor film, forming a semiconductor region by utilizing a part of the crystalline semiconductor film, forming a source electrode and a drain electrode to be electrically connected to the semiconductor region, and forming a gate wiring to be connected to the gate electrode.

摘要翻译： 本发明提供一种制造半导体器件的方法，该半导体器件具有能够高速操作的反交错TFT，其阈值变化很小。 此外，本发明提供了一种制造具有高产量的半导体器件的方法，其中通过少量材料实现成本降低。 根据本发明，通过形成反交错的TFT来制造半导体器件，该TFT通过使用高耐热材料形成栅电极，沉积非晶半导体膜，向非晶半导体膜中加入催化元素并加热 非晶半导体膜以形成晶体半导体膜，在结晶半导体膜上形成包含施主元素或稀有气体元素的层，并加热该层从结晶半导体膜除去催化元素，通过利用部分形成半导体区域 形成与半导体区域电连接的源电极和漏电极，形成与栅电极连接的栅极布线。

公开(公告)号：US07585714B2

公开(公告)日：2009-09-08

申请号：US11637914

申请日：2006-12-13

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji

IPC分类号： H01L21/00 ,  H01L21/336

CPC分类号： H01L21/02686 ,  C30B1/023 ,  C30B1/08 ,  C30B29/06 ,  H01L21/02683 ,  H01L21/2026

摘要： It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the surface thereof. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laser irradiation apparatus which can suppress the variation of on-current, mobility, and threshold of TFT, and to further provide a semiconductor device manufactured with the manufacturing method.A method for manufacturing a semiconductor device comprising the steps of adding the first noble gas to the semiconductor film formed over the insulating surface with the ion doping method and irradiating the semiconductor film with the first noble gas added therein with the laser light in an atmosphere of second noble gas, wherein the magnetic field is applied to the semiconductor film with the first noble gas added when the laser light is irradiated.

摘要翻译： 本发明的目的是提供一种激光照射装置，其能够在抑制半导体膜中的结晶性的变化和其表面状态的不均匀性的同时使半导体膜均匀结晶。 本发明的另一个目的是提供一种使用能够抑制TFT的导通电流，迁移率和阈值的变化的激光照射装置的半导体器件的制造方法，并且进一步提供利用制造制造的半导体器件 方法。 一种制造半导体器件的方法，包括以下步骤：用离子掺杂方法将第一稀有气体添加到形成在绝缘表面上的半导体膜上，并且在其中加入第一稀有气体的激光照射半导体膜， 第二惰性气体，其中当照射激光时，在加入了第一稀有气体的情况下将磁场施加到半导体膜。