公开(公告)号：US08954759B2

公开(公告)日：2015-02-10

申请号：US13619114

申请日：2012-09-14

申请人： Siamack Nemazie ,  Ngon Van Le

发明人： Siamack Nemazie ,  Ngon Van Le

IPC分类号： G06F21/00

CPC分类号： H04L63/0428 ,  G06F12/14 ,  G06F12/1433 ,  G06F2212/2024 ,  G11C11/1675 ,  G11C11/1695 ,  G11C14/0036 ,  H04L63/0823 ,  H04L63/083 ,  H04W12/04

摘要： A magnetic memory device includes a main memory made of magnetic memory, the main memory and further includes a parameter area used to store parameters used to authenticate data. Further, the magnetic memory device has parameter memory that maintains a protected zone used to store protected zone parameters, and an authentication zone used to store authentication parameters, the protection zone parameters and the authentication parameters being associated with the data that requires authentication. Upon modification of any of the parameters stored in the parameter memory by a user, a corresponding location of the parameter area of the main memory is also modified.

摘要翻译： 磁存储装置包括由磁存储器构成的主存储器，主存储器还包括用于存储用于认证数据的参数的参数区域。 此外，磁存储器装置具有参数存储器，其维护用于存储保护区参数的保护区，以及用于存储认证参数的认证区，保护区参数和认证参数与需要认证的数据相关联。 在修改由用户存储在参数存储器中的任何参数时，主存储器的参数区域的对应位置也被修改。

公开(公告)号：US09319387B2

公开(公告)日：2016-04-19

申请号：US14867881

申请日：2015-09-28

申请人： Siamack Nemazie ,  Ngon Van Le

发明人： Siamack Nemazie ,  Ngon Van Le

IPC分类号： H04L9/08 ,  H04L29/06 ,  G11C11/16 ,  H04W12/04

CPC分类号： H04L63/0428 ,  G06F12/14 ,  G06F12/1433 ,  G06F2212/2024 ,  G11C11/1675 ,  G11C11/1695 ,  G11C14/0036 ,  H04L63/0823 ,  H04L63/083 ,  H04W12/04

摘要： A magnetic memory device includes a main memory made of magnetic memory, the main memory and further includes a parameter area used to store parameters used to authenticate data. Further, the magnetic memory device has parameter memory that maintains a protected zone used to store protected zone parameters, and an authentication zone used to store authentication parameters, the protection zone parameters and the authentication parameters being associated with the data that requires authentication. Upon modification of any of the parameters stored in the parameter memory by a user, a corresponding location of the parameter area of the main memory is also modified.

公开(公告)号：US20130080687A1

公开(公告)日：2013-03-28

申请号：US13570202

申请日：2012-08-08

申请人： Siamack Nemazie ,  NGON VAN LE

发明人： Siamack Nemazie ,  NGON VAN LE

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7207

摘要： A central processing unit (CPU) subsystem is disclosed to include a MRAM used among other things for storing tables used for flash block management. In one embodiment all flash management tables are in MRAM and in an alternate embodiment tables are maintained in DRAM and are near periodically saved in flash and the parts of the tables that are updated since last save are additionally maintained in MRAM.

摘要翻译： 公开了一种中央处理单元（CPU）子系统，以包括用于存储用于闪存块管理的表格的MRAM。 在一个实施例中，所有闪存管理表都在MRAM中，并且在备选实施例中，表被维护在DRAM中，并且在闪存周围保持接近，并且自上次保存以来更新的部分表被另外保留在MRAM中。

公开(公告)号：US20160021073A1

公开(公告)日：2016-01-21

申请号：US14867881

申请日：2015-09-28

申请人： Siamack Nemazie ,  NGON VAN LE

发明人： Siamack Nemazie ,  NGON VAN LE

IPC分类号： H04L29/06 ,  H04W12/04 ,  G11C11/16

CPC分类号： H04L63/0428 ,  G06F12/14 ,  G06F12/1433 ,  G06F2212/2024 ,  G11C11/1675 ,  G11C11/1695 ,  G11C14/0036 ,  H04L63/0823 ,  H04L63/083 ,  H04W12/04

摘要： A magnetic memory device includes a main memory made of magnetic memory, the main memory and further includes a parameter area used to store parameters used to authenticate data. Further, the magnetic memory device has parameter memory that maintains a protected zone used to store protected zone parameters, and an authentication zone used to store authentication parameters, the protection zone parameters and the authentication parameters being associated with the data that requires authentication. Upon modification of any of the parameters stored in the parameter memory by a user, a corresponding location of the parameter area of the main memory is also modified.

公开(公告)号：US20150074347A1

公开(公告)日：2015-03-12

申请号：US14542533

申请日：2014-11-14

申请人： Siamack Nemazie ,  NGON VAN LE

发明人： Siamack Nemazie ,  NGON VAN LE

IPC分类号： H04L29/06 ,  G06F12/14 ,  G11C14/00

CPC分类号： H04L63/0428 ,  G06F12/14 ,  G06F12/1433 ,  G06F2212/2024 ,  G11C11/1675 ,  G11C11/1695 ,  G11C14/0036 ,  H04L63/0823 ,  H04L63/083 ,  H04W12/04

摘要： A magnetic memory device includes a main memory made of magnetic memory, the main memory and further includes a parameter area used to store parameters used to authenticate data. Further, the magnetic memory device has parameter memory that maintains a protected zone used to store protected zone parameters, and an authentication zone used to store authentication parameters, the protection zone parameters and the authentication parameters being associated with the data that requires authentication. Upon modification of any of the parameters stored in the parameter memory by a user, a corresponding location of the parameter area of the main memory is also modified.

摘要翻译： 磁存储器件包括由磁存储器制成的主存储器，主存储器还包括用于存储用于认证数据的参数的参数区域。 此外，磁存储器装置具有参数存储器，其维护用于存储保护区参数的保护区，以及用于存储认证参数的认证区，保护区参数和认证参数与需要认证的数据相关联。 在修改由用户存储在参数存储器中的任何参数时，主存储器的参数区域的对应位置也被修改。

公开(公告)号：US20140082372A1

公开(公告)日：2014-03-20

申请号：US13619114

申请日：2012-09-14

申请人： Siamack Nemazie ,  Ngon Van Le

发明人： Siamack Nemazie ,  Ngon Van Le

IPC分类号： G06F12/14

CPC分类号： H04L63/0428 ,  G06F12/14 ,  G06F12/1433 ,  G06F2212/2024 ,  G11C11/1675 ,  G11C11/1695 ,  G11C14/0036 ,  H04L63/0823 ,  H04L63/083 ,  H04W12/04

摘要： A magnetic memory device includes a main memory made of magnetic memory, the main memory and further includes a parameter area used to store parameters used to authenticate data. Further, the magnetic memory device has parameter memory that maintains a protected zone used to store protected zone parameters, and an authentication zone used to store authentication parameters, the protection zone parameters and the authentication parameters being associated with the data that requires authentication. Upon modification of any of the parameters stored in the parameter memory by a user, a corresponding location of the parameter area of the main memory is also modified.

摘要翻译： 磁存储装置包括由磁存储器构成的主存储器，主存储器还包括用于存储用于认证数据的参数的参数区域。 此外，磁存储器装置具有参数存储器，其维护用于存储保护区参数的保护区，以及用于存储认证参数的认证区，保护区参数和认证参数与需要认证的数据相关联。 在修改由用户存储在参数存储器中的任何参数时，主存储器的参数区域的对应位置也被修改。

公开(公告)号：US08468417B2

公开(公告)日：2013-06-18

申请号：US12388305

申请日：2009-02-18

申请人： Mehdi Asnaashari ,  Ronald Yamada ,  Siamack Nemazie ,  Jui-Yao (“Ray”) Yang

发明人： Mehdi Asnaashari ,  Ronald Yamada ,  Siamack Nemazie ,  Jui-Yao (“Ray”) Yang

IPC分类号： H03M13/00

CPC分类号： G06F11/1048 ,  G06F11/10 ,  G06F11/1004 ,  G06F13/28 ,  G06F21/64 ,  G11C2029/0411 ,  H03M13/09 ,  H03M13/13 ,  H03M13/29

摘要： The present disclosure includes methods, devices, and systems for data integrity in memory controllers. One memory controller embodiment includes a host interface and first error detection circuitry coupled to the host interface. The memory controller can include a memory interface and second error detection circuitry coupled to the memory interface. The first error detection circuitry can be configured to calculate error detection data for data received from the host interface and to check the integrity of data transmitted to the host interface. The second error detection circuitry can be configured to calculate error correction data for data and first error correction data transmitted to the memory interface and to check integrity of data and first error correction data received from the memory interface.

公开(公告)号：US20130073791A1

公开(公告)日：2013-03-21

申请号：US13303947

申请日：2011-11-23

申请人： Siamack Nemazie

发明人： Siamack Nemazie

IPC分类号： G06F12/00

CPC分类号： G11C11/1675 ,  G06F12/0879 ,  G06F13/28 ,  G11C7/10 ,  G11C7/22 ,  G11C11/1673 ,  G11C11/1693

摘要： A memory device includes a magnetic memory unit for storing a burst of data during burst write operations, each burst of data includes, sequential data units with each data unit being received at a clock cycle, and written during a burst write operation, wherein the burst write operation is performed during multiple clock cycles. Further, the memory device includes a mask register coupled to the magnetic memory unit that generates a write mask during the burst write operation to inhibit or enable data units of write data, furthermore the memory device allowing burst write operation to begin while receiving data units of the next burst of data to be written or providing read data.

摘要翻译： 存储器件包括用于在脉冲串写入操作期间存储数据突发的磁存储器单元，每个突发数据包括在每个数据单元以时钟周期接收的顺序数据单元，并且在突发写入操作期间写入， 写操作在多个时钟周期内执行。 此外，存储器件包括耦合到磁存储器单元的掩模寄存器，其在突发写入操作期间产生写掩码以禁止或启用写数据的数据单元，此外，存储器件允许突发写操作开始同时接收数据单元 要写入或提供读取数据的下一个数据组。

公开(公告)号：US08276042B2

公开(公告)日：2012-09-25

申请号：US12364900

申请日：2009-02-03

申请人： Mehdi Asnaashari ,  Yu-Song Liao ,  Siamack Nemazie

发明人： Mehdi Asnaashari ,  Yu-Song Liao ,  Siamack Nemazie

IPC分类号： G06F11/00

CPC分类号： G11C16/06 ,  G06F11/1012 ,  G11C29/04 ,  G11C2029/0411

摘要： The present disclosure includes methods, devices, modules, and systems for operating semiconductor memory. A number of method embodiments include reading data from memory cells corresponding to a sector of data, determining a number of the memory cells in a non-erased state, and, if the number of the memory cells in a non-erased state is less than or equal to a number of errors correctable by an ECC engine, determining the sector is erased.

摘要翻译： 本公开包括用于操作半导体存储器的方法，设备，模块和系统。 许多方法实施例包括从对应于数据扇区的存储器单元读取数据，确定处于未擦除状态的存储单元的数量，以及如果未擦除状态的存储单元的数量小于 或等于可由ECC引擎校正的错误数量，确定扇区被擦除。

公开(公告)号：US08260973B2

公开(公告)日：2012-09-04

申请号：US13242535

申请日：2011-09-23

申请人： Mehdi Asnaashari ,  Yu-Song Liao ,  Jui-Yao Yang ,  Siamack Nemazie

发明人： Mehdi Asnaashari ,  Yu-Song Liao ,  Jui-Yao Yang ,  Siamack Nemazie

IPC分类号： G06F3/00 ,  G06F13/00

CPC分类号： G06F3/061 ,  G06F3/0659 ,  G06F3/067 ,  G06F3/0679 ,  G06F3/0688 ,  G06F13/161 ,  G06F13/28

摘要： The present disclosure includes methods and devices for a memory controller. In one or more embodiments, a memory controller includes a plurality of back end channels, and a command queue communicatively coupled to the plurality of back end channels. The command queue is configured to hold host commands received from a host. Circuitry is configured to generate a number of back end commands at least in response to a number of the host commands in the command queue, and distribute the number of back end commands to a number of the plurality of back end channels.

摘要翻译： 本公开包括用于存储器控制器的方法和装置。 在一个或多个实施例中，存储器控制器包括多个后端通道，以及通信地耦合到多个后端通道的命令队列。 命令队列配置为保存从主机接收的主机命令。 电路被配置为至少响应于命令队列中的主机命令的数量生成多个后端命令，并且将后端命令的数量分配给多个后端信道的数量。