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    Random number generation systems and methods
    2.
    发明授权
    Random number generation systems and methods 有权

    公开(公告)号：US11620108B1

    公开(公告)日：2023-04-04

    申请号：US16415774

    申请日：2019-05-17

    申请人： Biswajit Ray ,  Aleksander Milenkovic

    发明人： Biswajit Ray ,  Aleksander Milenkovic

    IPC分类号： G06F7/58

    摘要： A random number generation system may generate one or more random numbers based on the repeated programming of a memory, such as a flash memory. As an example, a control system may repeatedly store a sequence to a block of flash memory to force a plurality of cells into a random state such that, at any given instant, the values in the cells may be random. The control system may identify which of the cells contain random values and then generate based on the identified values a number that is truly random.

    Flash memory-based radiation sensing
    3.
    发明授权
    Flash memory-based radiation sensing 有权

    公开(公告)号：US10509132B1

    公开(公告)日：2019-12-17

    申请号：US15717598

    申请日：2017-09-27

    申请人： Biswajit Ray ,  Levi Scott Davies

    发明人： Biswajit Ray ,  Levi Scott Davies

    IPC分类号： H01L29/792 ,  G11C16/22 ,  G01T1/02 ,  G11C16/34 ,  G11C11/56 ,  G11C16/26

    摘要： A radiation detection system may include a mobile device having a flash memory. The device may monitor various characteristics of the flash memory to determine when damage to the flash memory has occurred from radiation exposure. The device may associate damage to the flash memory with a radiation dose, and determine a level of radiation to which the memory, and thus the device, has been exposed. The device also may determine a length of time and locations where the radiation exposure has occurred. If the device determines that the level of radiation exposure exceeds a threshold associated with a safe level of radiation exposure for a human user, the device may generate an alert to the user.

    Systems and methods to convert memory to one-time programmable memory
    4.
    发明授权
    Systems and methods to convert memory to one-time programmable memory 有权

    公开(公告)号：US11101009B1

    公开(公告)日：2021-08-24

    申请号：US16808924

    申请日：2020-03-04

    申请人： Biswajit Ray

    发明人： Biswajit Ray

    IPC分类号： G11C16/34 ,  G06F12/02 ,  G11C7/10 ,  G11C16/16

    摘要： A memory system is configured to convert multiple programmable memory or a portion thereof to one-time programmable (OTP) memory. The system is configured to repetitively perform memory operations (such as program and erase procedures) on a portion of memory in order to induce accelerated degradation (aging) of select memory cells, thereby permanently changing the select cells, such that a pattern of the cells with degraded performance indicate a data value that has been permanently encoded into the memory.

    Systems and methods for runtime analog sanitization of memory
    6.
    发明授权
    Systems and methods for runtime analog sanitization of memory 有权

    公开(公告)号：US11600329B1

    公开(公告)日：2023-03-07

    申请号：US17207260

    申请日：2021-03-19

    申请人： Biswajit Ray

    发明人： Biswajit Ray

    IPC分类号： G11C16/00 ,  G11C16/10 ,  G11C16/26 ,  G11C16/04

    摘要： A system performs analog memory sanitization by forcing voltage levels in memory cells to substantially the same voltage level so that they are indistinguishable regardless of the data that has been previously stored in the cells. In some embodiments, a special programming operation for sanitizing a plurality of memory cells forces the charge in the cells to approximately the same voltage level by increasing the voltage level of all cells regardless of the data currently stored in the cells. As an example, each cell may be programmed to a logical high bit value (e.g., a “0”) by increasing the charge in each cell to a voltage level that is greater than the voltage level for writing the same logical bit value in a normal programming operation. Thus, after the programming operation is performed, the voltage levels of cells storing one logical bit value (e.g., a “0”) prior to the programming operation may be indistinguishable from voltage levels of cells storing a different logical bit value (e.g., a “1”) prior to the programming operation.

    Systems and methods for runtime analog sanitation of memory
    7.
    发明授权
    Systems and methods for runtime analog sanitation of memory 有权

    公开(公告)号：US11177003B1

    公开(公告)日：2021-11-16

    申请号：US16809191

    申请日：2020-03-04

    申请人： Biswajit Ray

    发明人： Biswajit Ray

    IPC分类号： G11C16/04 ,  G11C16/14 ,  G11C7/22 ,  G11C16/34 ,  G11C16/12

    摘要： A memory system performs analog sanitization of memory using a partial programming operation to overwrite existing data taking into account the relative voltage levels in the memory cells. By taking into account the relative voltage levels, the timing of a partial programming operation can be controlled to provide matched voltage levels in the memory cells so that conventional computer forensic techniques for data recovery are ineffective.

    Systems and methods for hardening flash memory to radiation
    8.
    发明授权
    Systems and methods for hardening flash memory to radiation 有权

    公开(公告)号：US11164642B1

    公开(公告)日：2021-11-02

    申请号：US16273062

    申请日：2019-02-11

    申请人： Biswajit Ray ,  Preeti Kumari

    发明人： Biswajit Ray ,  Preeti Kumari

    IPC分类号： G11C16/34 ,  G06F3/06 ,  G11C16/16

    摘要： A method for radiation hardening flash memory performs accelerated aging on the flash memory by program-erase (PE) cycling the flash memory. Such accelerated aging induces trap states in the tunnel oxide layer of the flash memory, which results in improved ionizing radiation tolerance. The number of cycles used to harden a given memory cell is optimally determined in order to limit effects of the radiation hardening on the reliability of the cell.

    Systems and methods for sensing radiation using flash memory
    10.
    发明授权
    Systems and methods for sensing radiation using flash memory 有权

    公开(公告)号：US11626169B1

    公开(公告)日：2023-04-11

    申请号：US17560925

    申请日：2021-12-23

    申请人： Biswajit Ray

    发明人： Biswajit Ray

    IPC分类号： G11C16/26 ,  G11C16/34 ,  G11C16/14

    摘要： A radiation detection system may include a mobile device having a flash memory. The device may monitor various characteristics of the flash memory to determine when damage to the flash memory has occurred from radiation exposure. The device may associate damage to the flash memory with a radiation dose, and determine a level of radiation to which the memory, and thus the device, has been exposed. The device also may determine a length of time and locations where the radiation exposure has occurred. If the device determines that the level of radiation exposure exceeds a threshold associated with a safe level of radiation exposure for a human user, the device may generate an alert to the user.