摘要:
A processor system having a memory device including a (RAM) memory and a direct memory access controller (DMAC) and an internal bus switchably connected between the memory and the DMAC. A Bus Switch (multiplexer) within the memory device alternately establishes a first data transmission path over the system bus between the memory and an external processor, and a second data transmission path over the internal bus between the memory and the DMAC. The first data transmission path, when established through the Bus Switch, supports random access of the memory by the external processor. The second data transmission path, when established through the Bus Switch, supports a Direct Memory Access (DMA) between the RAM and an external storage device, e.g., a Nonvolatile Memory (NVM), connected to the DMAC while the processor has full and exclusive use of the system bus.
摘要:
A storage device includes a nonvolatile memory device and a controller. The nonvolatile memory device includes a plurality of memory blocks, each of which includes string selection transistors connected to a plurality of string selection lines, ground selection transistors connected to a plurality of ground selection lines, and memory cells connected to a plurality of word lines. The controller reads valid data groups of a first memory block and writes the read valid data groups in a second memory block, during a read reclaim operation. The controller assigns locations of the second memory block, at which the valid data groups are written, based on read counts of the valid data groups.
摘要:
The present invention relates to a method for increasing survival rate of cells in animal cell culture under hypoxia condition by adding antibiotics to the culture media. The method of present invention comprises a step of culturing animal cells in culture media containing antibacterial agent of quinolones, quinones, aminoglycosides or chloramphenicol at the concentration range of 0.1 to 1000 &mgr;g/ml. The invented method can be practically applied for high-density animal cell culture to produce recombinant proteins or cultured cells.
摘要:
The present invention relates to a therapeutic agent for ischemia which inhibits apoptosis under ischemic condition. The therapeutic agent of the present invention comprises antibacterial agents of quinolones, quinones, aminoglycosides or chloramphenicol as an active ingredient. Since the invented therapeutic agent improved the viability of cells under hypoxic and hypoglycemic condition, it can be clinically for ischemic diseases such as applied as a potential drug for ischemia-associated infarction and cerebral infarction.
摘要:
A Belt Driven Electric Starter System (BES) may have an idle pulley is composed of pivot point idle pulley forming pivot points at both sides of driving belt, which is wound on starter generator pulley and crank pulley, and driven idle pulley forming the fixing point, and a side of tension controller is fixed to engine and the opposite side is fixed to starter generator combined with starter generator pulley, such that it is possible to more effectively use the empty space without interference with the other portions in the entire layout of the BES. Further, excessive tension of driving belt due to starter generator when the engine is started can be attenuated by retraction of tension controller that moves with starter generator, while the excessive tension of driving belt due to crank pulley when electricity is generated can also be attenuated by extension of tension controller that moves with starter generator.
摘要:
A system includes a differential demodulation module that differentially demodulates modulated signals received from R antennas. A first summing module sums the differentially demodulated signals to generate a combined signal. A state detection module detects states of X symbols in the combined signal. A second summing module (i) receives Y preamble sequences each comprising X predetermined symbols and (ii) generates X sums for each of the Y preamble sequences by adding each of the states of the X symbols with corresponding states of the X predetermined symbols of each of Y preamble sequences. The states of the X predetermined symbols are generated by inverting states of derived symbols in derived preamble sequences, which are derived from the Y preamble sequences. Each of the Y preamble sequences is different from others of the Y preamble sequences. R, X, and Y are integers greater than 1.
摘要:
A Belt Driven Electric Starter System (BES) may have an idle pulley is composed of pivot point idle pulley forming pivot points at both sides of driving belt, which is wound on starter generator pulley and crank pulley, and driven idle pulley forming the fixing point, and a side of tension controller is fixed to engine and the opposite side is fixed to starter generator combined with starter generator pulley, such that it is possible to more effectively use the empty space without interference with the other portions in the entire layout of the BES. Further, excessive tension of driving belt due to starter generator when the engine is started can be attenuated by retraction of tension controller that moves with starter generator, while the excessive tension of driving belt due to crank pulley when electricity is generated can also be attenuated by extension of tension controller that moves with starter generator.
摘要:
An optical filter and a method for fabricating an optical filter with a wide tuning range and a structure subject to miniaturization. The optical filter includes a bottom and a top dielectric layer with a stripe or film of metal between the dielectric layers which have dissimilar refractive index dispersion. The stripe of metal functions as a waveguide supporting a long-range surface plasmon polariton mode which will be achieved at wavelengths for which the refractive indices of the dielectric layers are the same thereby providing a bandpass filter. Furthermore, one of the dielectric layers is made of a material that allows its refractive index to be tuned, such as by changing its applied voltage or temperature. By tuning the refractive index of the dielectric layer, the wavelength at which the refractive indices of the dielectric layers match changes thereby effectively tuning the optical filter.
摘要:
Provided is a method for manufacturing a MOS transistor. The method comprises providing a substrate having a first active region and a second active region; forming a dummy gate stack on the first active region and the second active region, the dummy gate stack comprising a gate dielectric layer and a dummy gate electrode; forming source/drain regions in the first active region and the second active region disposed at both sides of the dummy gate stack; forming a mold insulating layer on the source/drain region; removing the dummy gate electrode on the first active region to form a first trench on the mold insulating layer; forming a first metal pattern to form a second trench at a lower portion of the first trench, and removing the dummy gate electrode on the second active region to from a third trench on the mold insulating layer; and forming a second metal layer in the second trench and the third trench to form a first gate electrode on the first active region and a second gate electrode on the second active region.
摘要:
Provided is a method for manufacturing a MOS transistor. The method comprises providing a substrate having a first active region and a second active region; forming a dummy gate stack on the first active region and the second active region, the dummy gate stack comprising a gate dielectric layer and a dummy gate electrode; forming source/drain regions in the first active region and the second active region disposed at both sides of the dummy gate stack; forming a mold insulating layer on the source/drain region; removing the dummy gate electrode on the first active region to form a first trench on the mold insulating layer; forming a first metal pattern to form a second trench at a lower portion of the first trench, and removing the dummy gate electrode on the second active region to from a third trench on the mold insulating layer; and forming a second metal layer in the second trench and the third trench to form a first gate electrode on the first active region and a second gate electrode on the second active region.