公开(公告)号：US20160336372A1

公开(公告)日：2016-11-17

申请号：US15222755

申请日：2016-07-28

Applicant: SONY CORPORATION

Inventor： Takeshi YANAGITA ,  Itaru OSHIYAMA ,  Takayuki ENOMOTO ,  Harumi IKEDA ,  Shinichiro IZAWA ,  Atsuhiko YAMAMOTO ,  Kazunobu OTA

IPC: H01L27/146

CPC classification number: H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract translation: 本技术涉及固态成像装置，固态成像装置的制造方法和电子装置，其可以提供具有进一步改善的特征的固态成像装置，例如减少的光学混色等。 此外，提供了使用其固态成像装置的电子装置。 根据具有基板和形成在基板上的多个光电转换器的固态成像装置，绝缘膜形成嵌入元件分离单元。 元件分离单元由具有固定电荷的绝缘膜构成，该绝缘膜形成为在从基板的光输入侧沿深度方向形成的槽部内的槽部的内壁面上涂布。

公开(公告)号：US20190027520A1

公开(公告)日：2019-01-24

申请号：US16130666

申请日：2018-09-13

Applicant: SONY CORPORATION

Inventor： Takeshi YANAGITA ,  Itaru OSHIYAMA ,  Takayuki ENOMOTO ,  Harumi IKEDA ,  Shinichiro IZAWA ,  Atsuhiko YAMAMOTO ,  Kazunobu OTA

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

公开(公告)号：US20170170217A1

公开(公告)日：2017-06-15

申请号：US15435476

申请日：2017-02-17

Applicant: SONY CORPORATION

Inventor： Takeshi YANAGITA ,  Itaru OSHIYAMA ,  Takayuki ENOMOTO ,  Harumi IKEDA ,  Shinichiro IZAWA ,  Atsuhiko YAMAMOTO ,  Kazunobu OTA

IPC: H01L27/146

CPC classification number: H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

公开(公告)号：US20170271385A1

公开(公告)日：2017-09-21

申请号：US15610345

申请日：2017-05-31

Applicant: SONY CORPORATION

Inventor： Takeshi YANAGITA ,  Itaru OSHIYAMA ,  Takayuki ENOMOTO ,  Harumi IKEDA ,  Shinichiro IZAWA ,  Atsuhiko YAMAMOTO ,  Kazunobu OTA

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

公开(公告)号：US20160211288A1

公开(公告)日：2016-07-21

申请号：US15084287

申请日：2016-03-29

Applicant: SONY CORPORATION

Inventor： Takeshi YANAGITA ,  Itaru OSHIYAMA ,  Takayuki ENOMOTO ,  Harumi IKEDA ,  Shinichiro IZAWA ,  Atsuhiko YAMAMOTO ,  Kazunobu OTA

IPC: H01L27/146

CPC classification number: H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12, an insulating film 21 forms an embedded element separating unit 19. The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30, within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.

Abstract translation: 本技术涉及固态成像装置，固态成像装置的制造方法和电子装置，其可以提供具有进一步改善的特征的固态成像装置，例如减少的光学混色等。 此外，提供了使用其固态成像装置的电子装置。 根据具有形成在基板12上的基板12和多个光电转换器40的固态成像装置，绝缘膜21形成嵌入元件分离单元19.元件分离单元19由绝缘膜20构成，绝缘膜20具有 形成为在从基板12的光输入侧在深度方向形成的槽部30内形成为涂覆槽部30的内壁面的固定电荷。

公开(公告)号：US20190206911A1

公开(公告)日：2019-07-04

申请号：US16295719

申请日：2019-03-07

Applicant: SONY CORPORATION

Inventor： Takeshi YANAGITA ,  Itaru OSHIYAMA ,  Takayuki ENOMOTO ,  Harumi IKEDA ,  Shinichiro IZAWA ,  Atsuhiko YAMAMOTO ,  Kazunobu OTA

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

公开(公告)号：US20140231948A1

公开(公告)日：2014-08-21

申请号：US14259494

申请日：2014-04-23

Applicant: Sony Corporation

Inventor： Keiji TATANI ,  Hideshi ABE ,  Masanori OHASHI ,  Atsushi MASAGAKI ,  Atsuhiko YAMAMOTO ,  Masakazu FURUKAWA

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14643

Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

Abstract translation: 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。