摘要:
A light emitting diode (LED) is provided with a base substrate, a plurality of light emitting chips disposed on the upper surface of the base substrate and electrically coupled in parallel to one another, and a fluorescent material layer for covering the light emitting chips.
摘要:
A light emitting diode (LED) is provided with a base substrate, a plurality of light emitting chips disposed on the upper surface of the base substrate and electrically coupled in parallel to one another, and a fluorescent material layer for covering the light emitting chips.
摘要:
A display device with an integrated touch screen panel includes upper and lower substrates each divided into a display area and a non-display area, which is provided outside of the display area and includes a sealing area. Pixels may be formed in the display area between the upper and lower substrates. A black matrix is formed on a bottom surface of the upper substrate and disposed in the display area and the non-display area. The black matrix is open in the sealing area. Sensing patterns may be formed in the display area on a top surface of the upper substrate. Sensing lines may be formed in the non-display area on the top surface of the upper substrate and connected to the sensing patterns along a first or second direction. A light-shielding pattern is formed to cover the sealing area of the non-display area on the top surface of the upper substrate.
摘要:
A display substrate includes a base substrate, an organic ridge pattern, a pixel electrode and a shielding electrode. A plurality of pixel regions arranged in a matrix shape are formed on the base substrate. The organic ridge pattern is protruded between adjacent pixel regions. The pixel electrode is in each of the pixel regions. The shielding electrode is disposed on the organic ridge pattern, and is electrically connected to the pixel electrode.
摘要:
First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and patterned to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads. A transparent conductive material or a reflective conductive material is deposited and patterned to form a plurality of pixel electrodes, a plurality of subsidiary gate pads and a plurality of subsidiary data pads electrically connected to the drain electrodes, the gate pads and the data pads, respectively. The gate lines and the data lines with low reflectance are used as a light-blocking film for blocking the light leakage between the pixel areas, and do not increase the black brightness. Accordingly, a separate black matrix need not be provided on the color filter panel, thereby securing both aperture ratio of the pixel and high contrast ratio.
摘要:
A display panel having a touch screen, the display panel includes an array substrate having a plurality of pixels and an opposite substrate having a plurality of touch electrodes. The array substrate includes the pixels receiving a data signal through thin film transistors and sensors electrically and physically making contact with the touch electrodes in response to an external pressure. Each sensor generates a common voltage input through the touch electrode in response to a scan signal controlling the thin film transistor as a sensing signal. Based on the generated sensing signal, a location coordinate to which the external pressure is applied is calculated, so that the number of wires for the display panel may decrease.
摘要:
A transflective liquid crystal display including upper and lower panels facing each other. A plurality of gate lines and a plurality of data lines intersecting each other are formed on the lower panel to define pixel areas arranged in a matrix. A plurality of thin film transistors connected to the gate lines and the data lines and a plurality of pixel electrodes connected to the thin film transistors are also provided on the lower panel. Each pixel electrode includes a transparent electrode and a reflecting electrode with high reflectance having a transmitting window. A black matrix having apertures opposite the pixel areas and a plurality of red, green and blue color filters are formed on the upper panel, and a passivation layer covers the color filters. The passivation layer includes thicker and thinner portions, and the thinner portion is disposed opposite the transmitting window.
摘要:
A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode. A data wire including a source electrode and a drain electrode that are made of a same layer on the ohmic contact layers and separated from each other, and a data line connected to the source electrode and defining the pixels of a matrix array by crossing the gate line is formed on the gate insulating layer. A passivation layer covering the data wire and having contact holes exposing the gate pad and the data pad is formed, and a pixel wire including a pixel electrode, a redundant gate pad, a redundant data pad that are respectively connected to the drain electrode, the gate pad and the data pad through the contact holes.
摘要:
A passivation layer is formed by coating a flowable insulating material on the substrate where a thin film transistor and a storage capacitor electrode, and a pixel electrode is formed on the passivation layer. A portion of the passivation layer is etched using the pixel electrode as a mask to make a groove on the thin film transistor, and then a black matrix is formed by filling an organic black photoresist in the groove. To increase the storage capacitance, a portion of the passivation layer is removed or to form a metal pattern on the storage capacitor electrode. A flowable insulating material is used as a gate insulating layer to planarize the substrate. In this case of the etch stopper type thin film transistor, a photo definable material is used as the etch stopper layer to reduce the parasitic capacitance between the gate electrode and the drain electrode.
摘要:
A passivation layer is formed by coating a flowable insulating material on the substrate where a thin film transistor and a storage capacitor electrode, and a pixel electrode is formed on the passivation layer. A portion of the passivation layer is etched using the pixel electrode as a mask to make a groove on the thin film transistor, and then a black matrix is formed by filling an organic black photoresist in the groove. To increase the storage capacitance, a portion of the passivation layer is removed or to form a metal pattern on the storage capacitor electrode. A flowable insulating material is used as a gate insulating layer to planarize the substrate. In the case of the etch stopper type thin film transistor, a photo definable material is used as the etch stopper layer to reduce the parasitic capacitance between the gate electrode and the drain electrode.