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公开(公告)号：US20060278163A1
公开(公告)日：2006-12-14
申请号：US11376997
申请日：2006-03-16
申请人： Stanford Ovshinsky , Herbert Ovshinsky , Masat Izu , Joachim Doehler , Kevin Hoffman , James Key , Mark Lycette
发明人： Stanford Ovshinsky , Herbert Ovshinsky , Masat Izu , Joachim Doehler , Kevin Hoffman , James Key , Mark Lycette
IPC分类号： C23C16/00
CPC分类号： C23C16/545 , C23C14/0078 , C23C14/351 , C23C14/542 , C23C14/562 , C23C14/564 , C23C16/4401 , C23C16/458 , C23C16/4586 , C23C16/517 , C23C16/52
摘要： A apparatus for depositing one or more thin film layers on one or more continuous web or discrete substrates. The apparatus includes a pay-out unit for dispensing one or a plurality of webs, a deposition unit that deposits a series of one or more thin film layers thereon, and a take-up unit that receives and stores the webs following deposition. In a preferred embodiment, deposition occurs through plasma enhanced chemical vapor deposition in which a plasma region is formed between a cathode in the deposition unit and one or more vertically-oriented webs. The instant deposition apparatus includes a support system for guiding and stabilizing the transport of one or more webs or substrates through the deposition chambers. The support system includes a magnetic guidance assembly and an edge-stabilizing assembly that operate to inhibit perturbations of the motion of a web or substrate in directions other than the direction of transport through the apparatus.
摘要翻译： 一种用于在一个或多个连续幅材或分立衬底上沉积一个或多个薄膜层的装置。 该装置包括用于分配一个或多个网的放出单元，在其上沉积一系列一个或多个薄膜层的沉积单元，以及在沉积之后接收和存储网的卷取单元。 在优选实施例中，通过等离子体增强化学气相沉积发生沉积，其中在沉积单元中的阴极和一个或多个垂直取向的网之间形成等离子体区域。 即时沉积设备包括用于引导和稳定通过沉积室的一个或多个卷材或基底的输送的支撑系统。 所述支撑系统包括磁性引导组件和边缘稳定组件，所述磁性引导组件和边缘稳定组件可操作以抑制幅材或衬底在不同于穿过所述设备的传送方向的方向上的运动的扰动。
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2.发明授权Apparatus for preventing fogging of intermediate film in microfiche recording systems 失效用于防止微胶卷记录系统中的中间膜起雾的装置
公开(公告)号：US4360579A
公开(公告)日：1982-11-23
申请号：US207229
申请日：1980-11-17
申请人： Peter Klose , Herbert Ovshinsky
发明人： Peter Klose , Herbert Ovshinsky
摘要： An apparatus and methods for producing a transmission barrier for inhibiting propagation of light into still unimaged transparent portions of microfiche recording system intermediate film strips by light-piping action are described. The barrier serves to optically isolate the subsequently-to-be-imaged still unexposed portion of the film strip in a dispensing film head from the illumination used to transfer the previously developed image on the exposed portion of the strip onto a permanent recording medium, such as a microfiche film card. In one exemplary form of the invention, the barrier regions are photographically produced dark bands or lines between the longitudinally spaced areas of the film strip to be imaged. These bands or lines are preferably created as latent images during the initial exposure of the intermediate film and subsequently developed at the same time as the record image. Alternative embodiments include placing bands or lines of light absorbing material on the film strip or by serrating or otherwise locally deforming the intermediate film strip to produce the barrier regions, the serrations serving to spoil total internal reflection in the film. Long term fogging of the film by normal ambient light is dealt with by providing an automatic film payout feature. Particular applications to archival microfiche systems involving the intermediate film strip carrying a transferable image are described. An apparatus for using pre-formed barriers on the film strip to regulate film advance is described.
摘要翻译： 描述了一种用于制造用于通过光管道作用抑制光传播到缩微胶片记录系统中间膜条的尚未成像的透明部分中的传输屏障的装置和方法。 屏障用于将分配胶片头中的胶片条的未曝光部分的未曝光部分与用于将先前显影的图像转印到永久记录介质上的照明用于光学隔离， 作为缩微胶片卡。 在本发明的一个示例性形式中，屏障区域是在待成像的胶片条的纵向间隔的区域之间照相产生的暗带或线。 这些带或线优选在中间膜的初始曝光期间作为潜像产生，并且随后与记录图像同时显影。 替代实施例包括将光吸收材料的带或线放置在膜条上，或通过使中间膜带锯齿或局部变形以产生阻挡区，锯齿用于破坏膜中的全内反射。 通过提供自动胶片支付功能来处理由正常环境光长时间雾化的胶片。 描述涉及携带可转印图像的中间膜条的档案缩微胶片系统的特殊应用。 描述了一种用于在胶片条上使用预先形成的屏障来调节膜前进的装置。
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公开(公告)号：US4664939A
公开(公告)日：1987-05-12
申请号：US837925
申请日：1986-03-10
申请人： Herbert Ovshinsky
发明人： Herbert Ovshinsky
CPC分类号： C23C16/545 , Y10T29/413
摘要： A vertical processor for the continuous deposition of semiconductor alloy material by glow discharge techniques. The vertical processor includes a plurality of operatively interconnected deposition chambers, at least one chamber of which includes a generally vertical cathode plate about each of the opposed faces of which a plasma region is developed and a substrate continuously passes for the deposition of semiconductor alloy material thereonto. Through the utilization of the vertical deposition scenario, the length of the processor may be substantially foreshortened, power consumption may be substantially decreased and feedstock gases may be more efficiently utilized.
摘要翻译： 用于通过辉光放电技术连续沉积半导体合金材料的垂直处理器。 垂直处理器包括多个可操作地互连的沉积室，其至少一个室包括大致垂直的阴极板，围绕其等离子体区域的每个相对面，并且衬底连续地通过以将半导体合金材料沉积到其上 。 通过利用垂直沉积场景，可以基本上缩短处理器的长度，从而可以显着降低功率消耗，并且可以更有效地利用原料气体。
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公开(公告)号：US5411592A
公开(公告)日：1995-05-02
申请号：US254392
申请日：1994-06-06
CPC分类号： C23C14/562 , C23C16/545 , H01M6/188 , H01M10/345 , H01M6/181 , H01M6/40
摘要： A multi-chambered deposition apparatus for depositing solid-state, thin-film battery materials onto substrate material. The apparatus minimally includes at least three distinct evacuable deposition chambers, which are physically interconnected in series. The first deposition chamber is adapted to deposit a layer of battery electrode material having a first polarity onto the substrate. The second deposition chamber is adapted to deposit a layer of solid-state electrolyte material onto the layer of battery electrode material deposited in the first chamber. The third deposition chamber is adapted to deposit a layer of battery electrode material having an opposite polarity from that deposited in the first chamber onto the solid-state electrolyte. The deposition chambers are interconnected by gas gates such that the substrate material is allowed to proceed from one deposition chamber to the next, while maintaining gaseous segregation between the chambers.
摘要翻译： 一种用于将固态薄膜电池材料沉积到基底材料上的多室沉积设备。 该装置最低限度地包括至少三个不同的可抽空的沉积室，它们在物理上互相串联连接。 第一沉积室适于将具有第一极性的电池电极材料层沉积到衬底上。 第二沉积室适于将沉积在第一室中的电池电极材料层上沉积固体电解质材料层。 第三沉积室适于将具有与沉积在第一室中的极性相反极性的电池电极材料层沉积到固态电解质上。 沉积室通过气门互连，使得允许衬底材料从一个沉积室进入下一个沉积室，同时保持室之间的气体分离。
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公开(公告)号：US4601260A
公开(公告)日：1986-07-22
申请号：US718571
申请日：1985-04-01
申请人： Herbert Ovshinsky
发明人： Herbert Ovshinsky
IPC分类号： H01L31/04 , C23C16/54 , H01L21/205 , C23C16/00
CPC分类号： C23C16/545
摘要： A vertical processor for the continuous deposition of semiconductor alloy material by glow discharge techniques. The vertical processor includes a plurality of operatively interconnected deposition chambers, at least one chamber of which includes a generally vertical cathode plate about each of the opposed faces of which a plasma region is developed and a substrate continuously passes for the deposition of semiconductor alloy material thereonto. Through the utilization of the vertical deposition scenario, the length of the processor may be substantially foreshortened, power consumption may be substantially decreased and feedstock gases may be more efficiently utilized.
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