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    Combination of photovoltaic devices and batteries which utilize a solid polymeric electrolyte
    7.
    发明申请
    Combination of photovoltaic devices and batteries which utilize a solid polymeric electrolyte 审中-公开
    使用固体聚合物电解质的光伏器件和电池的组合

    公开(公告)号：US20070054158A1

    公开(公告)日：2007-03-08

    申请号：US11328531

    申请日：2006-01-10

    申请人： Stanford Ovshinsky ,  Boyko Aladjov ,  Meera Vijan

    发明人： Stanford Ovshinsky ,  Boyko Aladjov ,  Meera Vijan

    IPC分类号： H01M16/00 ,  H01M4/48 ,  H01M4/52 ,  H01L31/00

    CPC分类号： H01M10/347 ,  H01L31/03762 ,  H01M4/242 ,  H01M4/32 ,  H01M4/36 ,  H01M4/383 ,  H01M4/48 ,  H01M4/50 ,  H01M4/52 ,  H01M4/5825 ,  H01M4/60 ,  H01M10/0565 ,  H01M10/30 ,  H01M10/36 ,  H01M10/465 ,  H01M16/00 ,  H01M16/003 ,  H01M2300/0082 ,  H02S20/25 ,  H02S40/38 ,  Y02E60/124

    摘要： A combination of photovoltaic devices and solid state batteries. The solid state battery comprising at least one negative electrode which may include a metal hydride active material, at least one positive electrode including an active material, and an anionic exchange membrane disposed between said negative electrode and said positive electrode. The anionic exchange membrane may be selected from materials allowing the flow of hydroxyl ions therethrough while simultaneously electrically separating the positive and negative electrodes. The anionic exchange membrane may be selected from a number of different materials based on different chemistries which allow the flow of hydroxyl ions therethrough. The anionic exchange membrane may be comprised of a polystyrene-divinylbenzene-polyvinylchloride polymeric material. The photovoltaic devices may be amorphous silicon solar cells. The photovoltaic devices may be triple junction, tandem amorphous silicon solar cells. The photovoltaic devices may be in the form of a roofing material. The photovoltaic devices may be deposited on thin film plastic material such as Kapton.

    摘要翻译： 光伏器件和固态电池的组合。 所述固态电池包括至少一个负极，所述负电极可包括金属氢化物活性材料，至少一种包括活性材料的正电极和设置在所述负电极和所述正电极之间的阴离子交换膜。 阴离子交换膜可以选自允许羟基离子流过其中的材料，同时电分离正极和负极。 阴离子交换膜可以选自许多基于允许羟基离子流过其中的不同化学物质的不同材料。 阴离子交换膜可以由聚苯乙烯 - 二乙烯基苯 - 聚氯乙烯聚合物材料组成。 光伏器件可以是非晶硅太阳能电池。 光伏器件可以是三结，串联非晶硅太阳能电池。 光伏器件可以是屋顶材料的形式。 光伏器件可以沉积在诸如Kapton的薄膜塑料材料上。

    Method of making a high performance, small area thin film transistor
    8.
    发明授权
    Method of making a high performance, small area thin film transistor 失效
    制造高性能，小面积薄膜晶体管的方法

    公开(公告)号：US4543320A

    公开(公告)日：1985-09-24

    申请号：US549991

    申请日：1983-11-08

    申请人： Meera Vijan

    发明人： Meera Vijan

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  G03C5/00

    CPC分类号： H01L29/6675 ,  H01L21/3085 ,  H01L21/3086 ,  H01L29/78642

    摘要： A method of making a high performance, small area thin film transistor having a drain region, an insulating layer, and a source region forming a non-coplanar surface with respect to a substrate is disclosed. The insulative layer is formed in between the source and drain regions. A deposited semiconductor overlies the non-coplanar surface to form a current conduction channel between the drain and source. A gate insulator and gate electrode overly at least a portion of the deposited semiconductor adjacent thereto. The non-coplanar surface can be formed by utilizing a dry process to simultaneously etch through several layers in a continuous one-step process. A second dielectric layer may be formed above the three previous layers. This decouples the gate electrode from the source region by creating two capacitances in series, thereby limiting the capacitance between the gate electrode and the source region.

    摘要翻译： 公开了一种制造具有漏极区，绝缘层和形成相对于衬底的非共面的源极区的高性能小面积薄膜晶体管的方法。 绝缘层形成在源区和漏区之间。 沉积的半导体覆盖非共面表面以在漏极和源极之间形成电流传导沟道。 栅极绝缘体和栅电极超过与其相邻的沉积半导体的至少一部分。 可以通过利用干法在连续的一步法中同时蚀刻几层来形成非共面表面。 可以在三个先前层之上形成第二介电层。 这通过产生串联的两个电容来将栅电极与源极区分开，从而限制栅电极和源极区之间的电容。

    Liquid crystal matrix display having improved spacers and method of making same
    9.
    发明授权
    Liquid crystal matrix display having improved spacers and method of making same 失效
    具有改进间隔物的液晶矩阵显示器及其制造方法

    公开(公告)号：US4653864A

    公开(公告)日：1987-03-31

    申请号：US834084

    申请日：1986-02-26

    申请人： Yair Baron ,  Meera Vijan

    发明人： Yair Baron ,  Meera Vijan

    IPC分类号： G02F1/1339 ,  G02F1/13

    CPC分类号： G02F1/13394 ,  G02F1/13392 ,  Y10S359/90

    摘要： Light influencing displays and more particularly liquid crystal displays are disclosed which have a pair of light transmissive electrode supports which are uniformly spaced apart by a predetermined distance over the entire display area. The electrode supports are spaced apart by spacer means including a plurality of spacers arranged in a predetermined pattern between the electrode supports.

    摘要翻译： 公开了影响影响的显示器，更具体地说是液晶显示器，其具有在整个显示区域上均匀间隔开预定距离的一对透光电极支架。 电极支撑件通过间隔件间隔开，间隔件包括在电极支撑件之间以预定图案布置的多个间隔件。

    Method of forming a large surface area integrated circuit
    10.
    发明授权
    Method of forming a large surface area integrated circuit 失效
    形成大面积集成电路的方法

    公开(公告)号：US4696885A

    公开(公告)日：1987-09-29

    申请号：US861756

    申请日：1986-05-09

    申请人： Meera Vijan

    发明人： Meera Vijan

    IPC分类号： G03F7/16 ,  H05K1/00 ,  H05K3/00 ,  H01L21/312

    CPC分类号： G03F7/16 ,  H05K1/0393 ,  H05K3/0091 ,  H05K3/0097 ,  Y10S430/136

    摘要： A method of forming a large area electronic element, e.g., a large area integrated microelectronic circuit which has at least one dimension in excess of three inches, by forming a film of photoresist separate from a surface to be etched, and thereafter depositing the film of photoresist on the surface to be etched. The deposited photoresist film is then exposed to actinic radiation and developed, and the exposed, underlying surface may thereafter be etched.The method for depositing the photoresist involves passing a viscous liquid composed of photoresist and solvent under positive pressure through a very thin elongated orifice that extends across and in close proximity to (e.g., 0.01 inch or less), but spaced apart from the surface to be processed to form a very thin flexible continuous film of liquid photoresist composition issuing from the orifice. The surface to be processed is linearly moved past the orifice so as to deposit the issued film of photoresist on the surface, in a thickness no greater than 100 microns, and preferably much less. The wet deposited film is then heated to drive off the solvent thereby reducing the thickness of the photoresist. The method disclosed herein is particularly suitable for processing large area rectangular substrates and continuous flexible substrates used in roll-to-roll processing equipment.

    摘要翻译： 通过形成与要蚀刻的表面分离的光致抗蚀剂膜，形成大面积电子元件的方法，例如具有至少一个尺寸超过三英寸的大面积集成微电子电路，然后将 要蚀刻的表面上的光致抗蚀剂。 然后将沉积的光致抗蚀剂膜暴露于光化辐射并显影，然后暴露的下面的表面可以被蚀刻。 沉积光致抗蚀剂的方法包括将由光致抗蚀剂和溶剂组成的粘性液体在正压下通过非常薄的细长孔，其延伸越过（例如，0.01英寸或更小），但距表面间隔开 加工成形成从孔口发出的液体光致抗蚀剂组合物的非常薄的柔性连续膜。 要处理的表面线性地移动通过孔口，以便在表面上沉积所发布的光致抗蚀剂膜，厚度不大于100微米，优选少得多。 然后将湿沉积膜加热以驱除溶剂，从而减小光致抗蚀剂的厚度。 本文公开的方法特别适用于处理卷对卷加工设备中使用的大面积矩形基板和连续柔性基板。